Vishay-Intertech-SI4848DY-T1-GE3
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Si4848DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
3.7
Definition
0.085 at V
GS
= 10 V
0.095 at V
GS
= 6.0 V
•
•
TrenchFET
®
Power MOSFETs
Compliant to RoHS Directive 2002/95/EC
150
3.5
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information:
Si4848DY
-T1-E3
(Lead (Pb)-free)
Si4848DY
-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
150
20
V
V
GS
T
A
= 25 °C
A
= 70 °C
3.7
3.0
2.7
2.1
Continuous Drain Current (T
J
= 150 °C)
a
I
D
T
I
DM
I
AS
I
S
Pulsed Drain Current
Avalanche Current
25
A
L = 0.1 mH
10
Continuous Source Current (Diode Conduction)
a
2.5
3.0
1.9
1.3
1.5
1.0
T
A
= 25 °C
T
A
= 70 °C
Maximum Power Dissipation
a
P
D
W
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
35
Maximum
Unit
t
≤
10 s
42
82
23
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
68
°C/W
R
thJF
18
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
Document Number: 71356
S09-0870-Rev. C, 18-May-09
1
Si4848DY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
2.0
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
100
1
nA
V
DS
= 120
V
,
V
GS
= 0 V
DS
= 120
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Current
a
25
V
GS
= 10
V
,
I
D
= 3.5 A
0.068
0.076
15
0.085
0.095
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= 6.0
V
,
I
D
= 3.0 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= 15
V
,
I
D
= 5 A
I
S
= 2.5 A, V
GS
= 0 V
S
V
V
SD
0.75
1.2
21
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
17
3.2
6.0
0.85
9.0
10
V
DS
= 75
V
,
V
GS
= 10
V
,
I
D
= 3.5 A
nC
0.5
1.8
14
15
35
25
70
Ω
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 75
V
,
R
L
= 21
Ω
I
D
≅
3.5 A, V
GEN
= 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
24
ns
17
t
rr
I
F
= 2.5 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
45
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
25
20
15
10
5
V
= 10 V thru 6 V
GS
5 V
T
3
= 125 °C
C
25 °C
3
V
, 4 V
– 55 °C
5
0
0
0
2
4
6
8
10
0
1
2
4
6
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
2
Document Number: 71356
S09-0870-Rev. C, 18-May-09
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.15
1200
900
600
300
0
0.12
0.09
C
iss
V
= 6 V
GS
V
= 10 V
0.06
0.03
0.00
GS
C
rss
C
oss
0
5
10
15
20
25
0
30
60
90
120
150
I
D
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
V
= 10 V
= 3.5 A
GS
V
= 75 V
= 3.5 A
DS
I
D
I
D
4
0
– 50
– 25
0
25
– Junction Temperature
(
°C)
J
50
75
100 125 150
0
6
12
18
24
30
Q
g
– Total Gate Charge (nC)
T
Gate Charge
On-Resistance vs. Junction Temperature
50
10
0.25
0.20
0.15
0.10
0.05
0.00
I
D
= 3.5
A
T =
150 °C
J
T =
25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71356
S09-0870-Rev. C, 18-May-09
3
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
60
50
0.5
I
D
= 250 µA
40
30
20
10
0
0.0
– 0.5
– 1.0
– 1.5
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
T
J
–
T
e
mperature (°C)
Time (s)
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 68 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 71356
S09-0870-Rev. C, 18-May-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
