Vishay-Intertech-SI4866BDY-T1-E3
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Si4866BDY
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
a
21.5
20.2
18.2
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Available
0.0053 at V
GS
= 4.5 V
0.006 at V
GS
= 2.5 V
0.0074 at V
GS
= 1.8 V
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
12
29.5 nC
APPLICATIONS
•
Synchronous Rectifier
•
Point-of-Load Synchronous Buck Converter
SO-8
D
D
S
1
2
3
4
8
7
6
5
D
D
D
S
S
G
G
T
o
p View
S
Ordering Information:
Si4866BD
Y
–
T1-E3 (Lead (Pb)-free)
Si4866BD
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
Limit
12
Unit
V
8
V
GS
21.5
T
T
T
C
= 25 °C
C
= 70 °C
A
= 25 °C
17.2
Continuous Drain Current (T
J
= 150 °C)
I
D
16.1
b,c
12.9
b,c
50
T
A
= 70 °C
A
Pulsed Drain Current
I
DM
I
S
4.0
2.3
b,c
20
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
I
AS
L = 0.1 mH
20
E
AS
mJ
W
4.45
T
C
= 25 °C
T
C
= 70 °C
2.85
P
D
Maximum Power Dissipation
2.50
b,c
1.6
b,c
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
– 55 to 150
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b,d
R
thJA
t
≤
10 s
40
23
50
28
°C/W
R
thJF
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
1
Si4866BDY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
12
V
V
DS
T
e
mperature Coefficient
12
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
– 3.5
V
DS
= V
GS
, I
D
= 250 µA
0.4
20
1.0
100
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
8 V
nA
V
DS
= 12
V
,
V
GS
= 0 V
DS
= 12
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 4.5 V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
10
I
D(on)
V
GS
= 4.5
V
,
I
D
= 12 A
0.0042
0.0048
0.006
80
0.0053
0.0060
0.0074
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5
V
,
I
D
= 10 A
GS
= 1.8
V
,
I
D
= 8 A
V
DS
= 15
V
,
I
D
= 12 A
Ω
V
Forward
T
r
ansconductance
a
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
5020
1305
805
52
V
DS
= 6
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= 6
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
pF
80
45
Q
g
T
o
tal Gate Charge
29.5
6.2
8.9
0.8
26
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
= 6
V
,
V
GS
= 2.5
V
,
I
D
= 10 A
f = 1 MHz
1.3
40
30
130
50
25
24
90
18
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
18
V
DD
= 6
V
,
R
L
= 1.2
Ω
I
D
≅
5 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
85
32
ns
T
u
rn-On Delay Time
Rise Time
13
12
V
DD
= 6
V
,
R
L
= 1.2
Ω
I
D
≅
5 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
57
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 2.3 A
4
A
Pulse Diode Forward Current
a
Body Diode Voltage
50
1.1
80
55
0.62
50
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
35
I
F
= 9.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
19
ns
t
b
31
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
2.0
1.6
1.2
0.
8
0.4
0.0
1.5
V
40
25 °C
30
20
10
T
C
= 125 °C
1
V
– 55 °C
1.2
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.3
0.6
0.9
1.5
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
7000
5600
4200
2
8
00
1400
0
V
= 1.
8 V
GS
C
iss
V
= 2.5
V
GS
C
oss
V
GS
= 4.5
V
C
rss
0
10
20
30
40
50
0
2
4
6
8
10
12
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.5
1.3
1.1
0.9
0.7
4.5
3.6
2.7
1.
8
0.9
0.0
I
D
= 10 A
I
D
= 12 A
V
= 4
V
DS
V
GS
= 1.
8 V
V
DS
= 6
V
V
GS
= 4.5
V
V
DS
=
8 V
– 50
– 25
0
25
50
75
100 125 150
0
11
22
33
44
55
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
3
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.020
0.016
0.012
0.00
8
0.004
0.000
100
I
D
= 12 A
10
150 °C
1
25 °C
0.1
125 °C
25 °C
0.01
0.001
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
200
160
120
8
0
0.1
– 0.1
– 0.3
– 0.5
I
= 5 mA
D
40
I
= 250
µ
A
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
1 ms
Limited
b
y R
DS(on)
*
10
1
10 ms
100 ms
1 s
10 s
DC
0.1
T
A
= 25 °C
Single P
u
lse
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
6
5
4
3
2
1
0
2.0
1.6
1.2
0.
8
0.4
0.0
0
0
25
50
75
100
125
150
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
5
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
2
0.02
2. Per Unit Base = R
= 90 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM DM
thJA
A
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
