Vishay-Intertech-SI4936CDY-T1-E3
| Part # | Vishay-Intertech-SI4936CDY-T1-E3 |
Download  | Vishay-Intertech-SI4936CDY-T1-E3 |
Si4936CDY
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
S
O-8 Dual
D
2
D
2
6
5
D
1
7
• Material categorization:
for definitions of compliance please see
D
1
8
APPLICATIONS
4
G
2
• Low current DC/DC conversion
• Notebook system power
3
S
2
2
1
S
1
D
1
D
2
Top View
PRODUCT SUMMARY
V
DS
(V)
30
G
G
1
2
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
0.040
0.050
2.8
R
Q
g
typ. (nC)
D
(A)
d
Configuration
S
S
1
2
I
5.8
N-Channel MOSFET
N-Channel MOSFET
Dual
ORDERING INFORMATION
Package
SO-8
Si4936CDY-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
20
T
C
= 25 °C
C
= 70 °C
5.8
T
4.6
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
5
a, b
4
a, b
20
A
Pulsed drain current
I
DM
I
S
T
C
= 25 °C
1.9
1.4
a, b
Continuous source-drain diode current
T
A
= 25 °C
T
C
= 25 °C
C
= 70 °C
2.3
T
1.5
Maximum power dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
1.7
a, b
1.1
a, b
-55 to +150
Operating junction and storage temperature range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient
a, c
t
10 s
R
thJA
R
thJF
58
42
75
55
°C/W
Maximum junction-to-foot (drain)
Steady state
Notes
a. Surface
mounted on 1″ x 1″ FR4 board
b. t
= 10 s
c. Maximum
under steady state conditions is 110 °C/W
d. Based
on T
C
= 25 °C
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4936CDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
30
–
–
–
V
V
DS
temperature coefficient
32
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
-5
–
3
V
DS
= V
GS
, I
D
= 250 μA
1.2
–
–
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
1
nA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
–
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
10
15
–
–
–
V
GS
= 10 V, I
D
= 5 A
0.033
0.041
15
0.040
0.050
–
Drain-source on-state resistance
a
S
V
GS
= 4.5 V, I
D
= 4.7 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 5 A
–
Input capacitance
C
iss
C
oss
C
rss
–
–
325
60
30
6
–
–
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Output capacitance
Reverse transfer capacitance
pF
–
–
V
DS
= 15 V, V
GS
= 10 V, I
D
= 5 A
–
9
Total gate charge
Q
g
–
2.8
1.1
0.8
2.8
12
13
16
11
4
4.2
–
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 5 A
f = 1 MHz
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
–
–
Gate resistance
0.6
–
5.6
18
20
25
17
8
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
–
V
DD
= 15 V, R
L
= 3.8
I
D
4 A, V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
–
Fall time
–
ns
Turn-on delay time
–
Rise time
–
9
18
20
15
V
DD
= 15 V, R
L
= 3.8
I
D
4 A, V
GEN
= 10 V, R
g
= 1
Turn-off delay time
–
11
8
Fall time
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
T
C
= 25 °C
I
S
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
–
–
1.9
20
1.2
20
8
A
I
S
= 4 A, V
GS
= 0 V
0.8
11
4
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 4 A, di/dt = 100 A/μs,
T
J
= 25 °C
6
–
ns
t
b
5
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
5
4
3
2
1
0
V
GS
= 10 V thru 4 V
15
10
5
T
C
= 25 °C
V
V
= 3 V
GS
T
C
= 125 °C
2
= 1 V, 2 V
T
C
= – 55 °C
GS
0
0.0
0.5
V
1.0
1.5
2.0
2.5
20
6
0
1
3
4
V
GS
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
400
300
200
100
0
0.06
0.05
0.04
0.03
0.02
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
5
10
15
20
25
30
0
5
10
15
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current
Capacitance
10
1.7
1.5
1.3
1.1
0.9
0.7
I
= 5 A
D
V
= 10 V; I
= 5 A
D
GS
8
6
4
2
0
V
= 15 V
DS
V
I
= 4.5 V;
GS
V
= 24 V
DS
= 4.7 A
D
0
1
2
3
4
5
– 50
– 25
0
T
25
50
75
100 125 150
– Junction
T
e
mperature (°C)
Q
g
–
T
o
tal Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.10
100
0.08
0.06
0.04
0.02
0.00
10
T
= 125 °C
J
T
J
= 150 °C
T
J
= 25 °C
1
T
= 25 °C
J
0.1
0.0
0.3
V
0.6
0.9
1.2
1.5
0
2
4
6
8
10
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
SD
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.3
20
16
12
8
2.1
1.9
1.7
1.5
1.3
1.1
I
= 250 µA
D
4
0
0.001
0.01
0.1
1
10
100
1000
– 50
– 25
0
25
50
75
100 125 150
Time (s)
T
J
–
T
e
mperature (°C)
Threshold Voltage
Single Pulse Power
100
Limited by R
*
DS(on)
10
1
100 µA
1 ms
10 ms
100 ms
0.1
T
= 25 °C
1 s
10 s, DC
A
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
Current Derating
a
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
Single Pulse
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. Surface Mounted
0.01
10
-4
-3
-2
-1
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S09-0390-Rev. C, 09-Mar-09
Document Number: 69097
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
