Vishay-Intertech-Si4943CDY-T1-GE3
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New Product
Si4943CDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a, e
Definition
0.0192 at V
GS
= – 10 V
0.0330 at V
GS
= – 4.5 V
– 8
– 8
•
•
•
T
r
enchFET
®
Power MOSFET
100 % R
g
and UIS
T
e
sted
– 20
20
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Load Switching
– Computer
SO-8
S
1
S
2
– Game Systems
Battery Switching
– 2-Cell Li-Ion
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
•
G
S
G
G
2
1
G
Top
V
ie
w
D
D
2
1
Orderin
g
Information:
Si4943CDY
-T1-E3
(Lead (P
b
)-free)
Si4943CDY
-T1-GE3 (Lead (P
b
)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
V
DS
Limit
– 20
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
C
= 70 °C
– 8
e
– 8
e
T
Continuous Drain Current (T
J
= 150 °C)
I
D
– 8
b, c, e
– 6.7
b, c
– 30
– 2.5
– 1.7
b, c
– 30
– 11
6
T
A
= 25 °C
T
A
= 70 °C
I
DM
I
S
A
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
T
C
= 25 °C
A
= 25 °C
T
I
SM
I
AS
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
3.1
2
2
b, c
P
D
Maximum Power Dissipation
1.28
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 50 to 150
°C
THERMAL RESISTANCE RATINGS
Limit
Maximum
62.5
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
R
thJF
Typical
50
Unit
t
≤
10 s
Steady State
°C/W
30
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
1
New Product
Si4943CDY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 20
V
V
DS
T
e
mperature Coefficient
– 21
5.4
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
= V
GS
, I
D
= – 250 µA
– 1
– 3
– 100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 20
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
b
µA
A
V
DS
= – 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
– 10
V
DS
=
5
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 8.3 A
V
GS
= – 4.5
V
,
I
D
= – 6.4 A
V
DS
= – 10
V
,
I
D
= – 8.3 A
– 30
0.0160
0.0275
19
0.0192
0.0330
Drain-Source On-State Resistance
b
Ω
S
Forward
T
r
ansconductance
b
Dynamic
a
C
iss
C
oss
C
rss
Input Capacitance
1945
460
385
41
20
7
V
DS
= – 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
DS
= – 10
V
,
V
GS
= – 10
V
,
I
D
= – 8.3 A
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
V
62
30
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 8.3 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
9
0.5
2.5
13
11
35
10
50
71
29
15
5
20
17
53
15
75
107
44
23
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 10
V
,
R
L
= 1.5
Ω
I
D
≅
– 6.7 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
V
DD
= – 10
V
,
R
L
= 1.5
Ω
I
D
≅
– 6.7 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
a
I
S
T
C
= 25 °C
I
S
= – 6.7 A
– 2.5
A
I
SM
V
SD
t
rr
– 30
– 1.2
45
Body Diode Voltage
– 0.77
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
17
26
I
F
= – 6.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
13
ns
t
b
17
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
6
4
2
0
30
V
= 10
V
thr
u
5
V
GS
24
1
8
12
6
V
= 4
V
GS
T
C
= 125 °C
C
T
= 25 °C
V
= 3
V
GS
V
GS
= 2
V
T
C
= – 55 °C
0
0
1
2
3
4
0
1
2
3
4
5
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.0
8
0.06
0.04
0.02
0.00
3000
2400
1
8
00
1200
600
0
C
iss
V
= 4.5
V
GS
C
oss
C
rss
V
GS
= 10
V
0
5
10
15
20
25
30
0
4
8
12
16
20
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.5
1.3
1.1
0.9
0.7
V
GS
= 10
V
, I
=
8
.3 A
D
I
=
8
.3 A
D
8
V
DS
= 10
V
6
V
DS
= 16
V
V
GS
= 4.5
V
, I
= 6.4 A
D
4
2
0
0
10
20
30
40
– 50
– 25
0
25
50
75
100 125 150
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
3
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.04
0.03
0.02
0.01
0
I
=
8
.3 A
D
10
T
J
= 125 °C
T
J
= 150 °C
T =
25 °C
J
1
T
J
= 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
0
4
8
12
16
20
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.5
2.3
2.1
1.9
1.7
1.5
1.3
100
8
0
60
40
20
0
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1 ms
10 ms
1
0.1
100 ms
1 s
10 s
DC
B
V
DSS
Limited
T
= 25 °C
A
Single P
u
lse
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
9
Package Limited
6
3
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
4
3
2
1
0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
5
New Product
Si4943CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
=
8
5 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
Single P
u
lse
0.001
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications.
Such statements are not binding statements
about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application.
Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time.
All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) – recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards.
Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition.
We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
