Vishay-Intertech-SI4946CDY-T1-GE3
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Si4946CDY
Vishay Siliconix
Dual N-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
S
O-8 Dual
D
2
5
D
2
6
D
1
7
• 100 % R
g
tested
D
1
8
• Material categorization:
for definitions of compliance please see
4
G
2
APPLICATIONS
3
S
2
2
G
1
• DC/DC converter
D
1
D
2
1
S
1
• Load switch
Top View
• Inverters
Marking code:
G3
• Circuit protection
PRODUCT SUMMARY
V
DS
(V)
G
1
G
2
60
R
DS(on)
max. (
Ω
) at V
GS
= 10 V
DS(on)
max. (
Ω
) at V
GS
= 4.5 V
0.0409
0.0516
2.4
R
S
1
S
2
Q
g
typ. (nC)
D
(A)
d
Configuration
N-Channel MO
S
FET
N-Channel MO
S
FET
I
6.1
Dual
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
Si4946CDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
60
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
20
T
T
C
= 25 °C
C
= 70 °C
6.1
4.9
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
5.2
a, b
4.2
a, b
25
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
2.3
1.7
a, b
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
I
AS
8
L = 0.1 mH
E
AS
3.2
mJ
W
T
C
= 25 °C
2.8
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
1.8
Maximum power dissipation
P
D
2
a, b
1.3
a, b
-55 to +150
Operating junction and storage temperature range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a, c
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
t
≤
10 s
Steady state
58
38
62.5
45
°C/W
Maximum junction-to-foot (drain)
R
thJF
Notes
a. Surface
mounted on 1″ x 1″ FR4 board
b. t
= 10 s
c. Maximum
under steady state conditions is 110 °C/W
d. T
C
= 25 °C
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4946CDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
60
–
–
–
V
V
DS
temperature coefficient
40
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
-4.8
–
V
DS
= V
GS
, I
D
= 250 μA
1
–
–
3
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
nA
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.2 A
–
–
1
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
–
–
10
8
–
–
0.0330
0.0430
17
0.0409
0.0516
–
Drain-source on-state resistance
a
Ω
S
V
GS
= 4.5 V, I
D
= 4.6 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 30 V, I
D
= 5.2 A
–
Input capacitance
C
iss
C
oss
C
rss
–
350
148
9
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 5.2 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 5.2 A
f = 1 MHz
–
pF
–
–
–
5.1
2.4
1.1
0.5
1.3
8
10
4.8
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
–
–
Gate resistance
0.26
2.6
16
10
30
6
Ω
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
Rise time
5
V
DD
= 30 V, R
L
= 7.2
Ω
, I
D
≅
4.2 A,
V
GEN
= 10 V, R
g
= 1
Ω
Turn-off delay time
16
3
Fall time
ns
Turn-on delay time
17
35
14
20
30
55
28
33
Rise time
V
DD
= 30 V, R
L
= 7.2
Ω
, I
D
≅
4.2 A,
V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
2.3
25
1.2
32
35
–
A
I
S
= 4.2 A, V
GS
= 0 V
0.85
21
12
12
9
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 4.2 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 ꢀs, duty cycle
≤
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4946CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
30
25
20
15
10
5
V
GS
= 10 V thru 7 V
V
GS
= 4 V
20
15
10
5
T
C
= 25 °C
V
GS
= 3 V
T
C
= 125 °C
2
T
C
= -55 °C
0
0
0
1
2
3
4
0
1
3
4
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.10
0.08
0.06
0.04
0.02
0
10000
1000
100
500
400
300
200
100
0
10000
1000
100
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
10
10
0
5
10
15
20
25
0
15
30
45
60
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
V
GS
= 10 V, I
D
= A
V
DS
= 30 V
I
D
= 5.2 A
V
DS
= 15 V
6
V
GS
= 4.5 V, 4.6 A
V
DS
= 48 V
4
2
0
10
10
0
1.1
2.2
3.3
4.4
5.5
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4946CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.20
0.15
0.10
0.05
0
10000
1000
T
J
= 150 °C
T
J
= 25 °C
1
T
J
= 150 °C
100
0.1
0.01
T
J
= 25 °C
10
10
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
50
40
30
20
10
0
2.2
2.0
1.8
1.6
1.4
1.2
10000
1000
100
I
D
= 250 μA
10
-50 -25
0
25
50
75 100
125 150
0.001 0.01
0.1
1
10
100
1000
T
J
– Temperature (°C)
2nd line
Time (
s
)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
I
DM
limited
(1)
Limited by R
DS(on)
1000
100 μs
1
0.1
1 ms
10 ms
100 ms
100
10 s, 1 s
DC
0.01
T
A
= 25 °C
Single pulse
BVDSS limited
10
0.001
10
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operating Area, Junction-to-Ambient
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4946CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
7
10000
1000
100
6
5
4
3
2
1
0
10
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
Current Derating
a
Axis Title
Axis Title
3.5
2.8
2.1
1.4
0.7
0
10000
1000
100
0.90
0.72
0.54
0.36
0.18
0
10000
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
A
– Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4946CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S17-1208-Rev. A, 26-Jul-17
Document Number: 75642
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
