Vishay-Intertech-SI4948BEY-T1-GE3
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Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
– 3.1
– 2.8
Definition
0.120 at V
GS
= – 10 V
0.150 at V
GS
= – 4.5 V
TrenchFET
®
Power MOSFET
Compliant to RoHS Directive 2002/95/EC
– 60
•
•
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View
D
1
D
2
Ordering Information:
Si4948BE
Y
–
T1-E3 (Lead (Pb)-free)
Si4948BE
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
– 60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
A
= 25 °C
T
A
= 70 °C
– 3.1
– 2.6
– 2.4
– 2.0
Continuous Drain Current (T
J
= 150 °C)
a
I
D
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
– 25
A
Continuous Source Current (Diode Conduction)
a
Avalanche Current
– 2
– 1.1
I
AS
E
AS
15
11
L = 0.1 mH
Single Pulse Avalanche Energy
mJ
W
T
A
= 25 °C
T
A
= 70 °C
2.4
1.7
1.4
Maximum Power Dissipation
a
P
D
0.95
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
53
Maximum
62.5
Unit
t
≤
10 s
Maximum Junction-to-Ambient
a
R
thJA
Steady State
Steady State
85
110
°C/W
R
thJF
Maximum Junction-to-Foot
30
37
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
1
Si4948BEY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
Gate Threshold Voltage
– 1
– 3
100
– 1
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
nA
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 70 °C
V
DS
= – 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
– 10
On-State Drain Current
a
– 25
V
GS
= – 10
V
,
I
D
= – 3.1 A
0.100
0.126
8.5
0.120
0.150
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
R
DS(on)
Ω
V
GS
= – 4.5
V
,
I
D
= – 0.2 A
g
fs
V
DS
= – 15
V
,
I
D
= – 3.1 A
I
S
= – 2 A, V
GS
= 0 V
S
V
V
SD
– 0.8
– 1.2
22
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
14.5
2.2
3.7
14
V
DS
= – 30
V
,
V
GS
= – 10
V
,
I
D
= – 3.1 A
f = 1 MHz
nC
Ω
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
10
15
22
75
55
50
15
V
DD
= – 30
V
,
R
L
= 30
Ω
I
D
≅
– 1 A, V
GEN
= – 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
50
ns
35
t
rr
I
F
= – 2 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
30
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
25
20
15
10
5
V
GS
= 10 V thru 5 V
4 V
3 V
T
= 125
°
C
C
25
°
C
2
– 55
°
C
0
0
0
1
2
3
4
5
6
7
8
0
1
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.40
0.35
0.30
0.25
0.20
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
0.15
0.10
0.05
0.00
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
I
= 30 V
GS
= 3.1 A
DS
I
= 3.1 A
D
6
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
3
6
9
12
15
Q
– Total Gate Charge (nC)
T –
Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
20
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150
°
C
J
I
D
= 3.1 A
T
= 25
°
C
1.0
J
1
0.0
0.2
0.4
0.6
0.8
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
3
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.6
50
40
0.4
I
D
= 250
µ
A
0.2
0.0
30
20
10
– 0.2
– 0.4
0
–
3
–
2
10
–
1
10
– 50
– 25
0
25
50
75
100 125 150
10
1
10
100
600
T
– Temperature (°C)
Time (s)
J
Single Pulse Power
Threshold Voltage
100
I
Limited
DM
Limited
by R
10
1
P(t) = 0.0001
DS(on)*
P(t) = 0.001
I
P(t) = 0.01
P(t) = 0.1
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85
°
C/W
thJA
(t)
3.
T
JM
–
T =
P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–
4
10
–
3
10
–
2
10
–
1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
–
2
10
–
1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
5
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
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to the warranty expressed therein.
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Revision: 09-Jul-2021
Document Number: 91000
1
