Vishay-Intertech-SI4966DY-T1-E3
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Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
7.1
Definition
0.025 at V
GS
= 4.5 V
0.035 at V
GS
= 2.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
20
6.0
Compliant to RoHS Directive 2002/95/EC
SO-8
D
1
D
2
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
G
1
S
2
2
G
G
G
2
1
Top View
S
S
2
1
Ordering Information:
Si4966DY
-T1-E3
(Lead (Pb)-free)
Si4966DY
-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
12
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
A
= 25 °C
T
A
= 70 °C
7.1
5.7
40
Continuous Drain Current (T
J
= 150 °C)
a
I
D
A
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
1.7
T
A
= 25 °C
T
A
= 70 °C
2
Maximum Power Dissipation
a
P
D
W
1.3
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
°C/W
Notes:
a. Surface Mounted on FR4 board, t
≤
10 s.
Document Number: 70718
S09-0869-Rev. D, 18-May-09
1
Si4966DY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
0.6
1.5
100
1
V
V
DS
= 0
V
,
V
GS
=
12 V
Gate-Body Leakage
nA
V
DS
= 20
V
,
V
GS
= 0 V
V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 4.5 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
5
On-State Drain Current
a
20
V
GS
=
4.5
V
,
I
D
= 7.1 A
0.019
0.025
27
0.025
0.035
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= 2.5
V
,
I
D
= 6.0 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= 10
V
,
I
D
= 7.1 A
I
S
= 1.7 A, V
GS
= 0 V
S
V
V
SD
1.2
50
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
25
6.5
4
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 7.1 A
f = 1 MHz
nC
1.6
40
40
90
40
40
2.7
60
Ω
t
d(on)
t
r
t
d(off)
t
f
60
V
DD
= 10
V
,
R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
150
60
ns
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
80
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 70718
S09-0869-Rev. D, 18-May-09
Si4966DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
40
30
20
10
0
V
= 5 V thru 3 V
GS
2.5 V
30
20
10
0
2 V
T
= 125 °C
C
25 °C
1
V
,
1
.5 V
3.5
– 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4000
3200
2400
1600
800
0.10
0.08
0.06
0.04
0.02
0.00
C
iss
V
GS
= 2.5 V
C
oss
V
GS
= 4.5 V
C
rss
0
0
4
8
12
16
20
0
10
20
– Drain Current (A)
30
40
V
– Drain-to-Source Voltage (V)
I
D
DS
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V
I
= 4.5 V
V
D
= 10 V
GS
DS
= 7.1 A
= 7.1 A
I
D
– 50
– 25
0
25
50
75
100 125 150
0
5
10
15
20
25
Q
– Total Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70718
S09-0869-Rev. D, 18-May-09
3
Si4966DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.10
0.08
0.06
0.04
0.02
0.00
I
D
= 7.1 A
T
= 150 °C
J
10
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
30
24
18
12
6
I
= 250
µ
A
D
0.0
– 0.2
– 0.4
– 0.6
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.10
1.00
Time (s)
10.00
T
– Temperature (°C)
J
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 62.5 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 70718
S09-0869-Rev. D, 18-May-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
