Vishay-Intertech-SI5418DU-T1-GE3
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Si5418DU
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK
®
ChipFET
®
S
in
g
le
• TrenchFET
®
power MOSFET
D
D
7
8
D
6
• Thermally enhanced PowerPAK
®
ChipFET
package
S
5
– Small footprint area
– Low on-resistance
– Thin 0.8 mm profile
1
D
2
D
S
9
3
D
4
G
1
• Material
categorization: for definitions of compliance
Top View
Bottom View
Marking code:
AI
D
APPLICATIONS
PRODUCT SUMMARY
V
DS
(V)
• Load switch, PA switch, and battery
switch for portable applications
30
0.0145
0.0185
9.5
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
• DC/DC synchronous rectification
G
R
Q
g
typ. (nC)
D
(A)
a
Configuration
I
12
S
Single
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK ChipFET
Si5418DU-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
20
T
C
= 25 °C
12
a
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
12
a
Continuous drain current (T
J
= 150 °C)
I
D
11.6
b, c
9.3
b, c
40
12
a
2.6
b, c
A
Pulsed drain current
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
T
C
= 25 °C
C
= 70 °C
31
T
20
Maximum power dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
3.1
b, c
2
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, f
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
t
5 s
Steady state
34
3
40
4
°C/W
Maximum junction-to-case (drain)
R
thJC
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 5 s
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 90 °C/W
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si5418DU
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 ꢀA
I
D
= 250 ꢀA
30
–
–
–
V
V
DS
temperature coefficient
40
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
-7
–
V
DS
= V
GS
, I
D
= 250 ꢀA
1.2
–
–
3
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
nA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
–
–
1
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
ꢀA
A
–
–
–
10
20
–
–
V
GS
= 10 V, I
D
= 7.7 A
0.0120
0.0150
31
0.0145
0.0185
–
Drain-source on-state resistance
a
S
V
GS
= 4.5 V, I
D
= 6.9 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 7.7 A
–
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1350
190
80
–
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 11.6 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 11.6 A
f = 1 MHz
Output capacitance
Reverse transfer capacitance
–
pF
–
20
30
15
–
Total gate charge
Q
g
9.5
4.5
2.7
3.5
20
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
Gate resistance
–
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
30
15
30
15
15
15
30
15
Rise time
10
V
DD
= 15 V, R
L
= 1.6
, I
D
9.3 A,
V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
20
Fall time
10
ns
Turn-on delay time
10
Rise time
10
V
DD
= 15 V, R
L
= 1.6
, I
D
9.3 A,
V
GEN
= 10 V, R
g
= 1
Turn-off delay time
20
Fall time
10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
T
C
= 25 °C
I
S
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
–
12
40
1.2
40
30
–
A
–
I
S
= 9.3 A, V
GS
= 0 V
0.8
25
19
14
11
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 9.3 A, di/dt = 100 A/ꢀs,
T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si5418DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
10
8
V
GS
= 10 thru 5 V
V
GS
= 4 V
32
24
16
8
T
C
= – 55 °C
6
4
T
C
= 25 °C
2
T
C
= 125 °C
V
GS
= 3 V
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1800
1500
1200
900
600
300
0
0.020
0.018
0.016
0.014
0.012
0.010
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
0
8
16
24
32
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
1.4
1.2
1.0
0.8
0.6
I
= 11.6 A
D
I
= 8 A
D
V
= 10 V
GS
8
6
4
2
0
V
DS
= 15 V
V
DS
= 24 V
0
5
10
15
20
25
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction
T
e
mperature (°C)
Q
g
– Total Gate Charge(nC)
Gate Charge
On-Resistance vs. Junction Temperature
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si5418DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.035
100
I
= 7.7 A
D
0.030
0.025
0.020
0.015
0.010
T
J
= 150 °C
T
= 25 °C
J
10
T
= 125 °C
A
T
= 25 °C
A
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
– Source-to-DrainVoltage(V)
SD
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
50
40
30
20
10
0
I
= 250 µA
D
– 50
– 25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
1000
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
100 µs
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
BVDSS
Limited
T
= 25 °C
A
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si5418DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
35
30
25
20
15
10
5
50
40
30
20
Package Limited
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperature (°C)
Current Derating
a
Power Derating
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si5418DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
0.02
2
2. Per Unit Base = R
= 75 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Sq
u
are Wave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.02
Single P
u
lse
0.1
10
-4
-3
-2
-1
10
10
Sq
u
are Wave P
u
lse D
u
ration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S-81448-Rev. B, 23-Jun-08
Document Number: 69822
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
ChipFET
®
Case Outline
D
(8)
(7)
(6)
(5)
Pin #1
indicator
(1)
(2)
(3)
(4)
S
ide view of
s
ingle
S
ide view of dual
Z
e
b
D2
D2
D1
K
Detail Z
H
L
D(1) D(2)
D(3)
G
(4)
S
I(1)
G
I(2)
S
2(3)
G
2(4)
K1
E1
E3
D3
D(8)
D(7) D(6)
S
(5)
D1(8) D1(7)
D2(6) D2(5)
K3
Back
s
ide view of
s
ingle pad
Back
s
ide view of dual pad
MILLIMETERS
INCHES
NOM.
0.030
–
DIM.
MIN.
0.70
0
NOM.
0.75
–
MAX.
0.85
0.05
0.35
0.25
3.08
2.00
1.32
0.30
1.98
1.63
1.17
0.55
MIN.
0.028
0
MAX.
0.033
0.002
0.014
0.010
0.121
0.079
0.052
0.012
0.078
0.064
0.046
0.022
A
A1
b
0.25
0.15
2.92
1.75
1.07
0.20
1.82
1.38
0.92
0.45
0.30
0.20
3.00
1.87
1.20
0.25
1.90
1.50
1.05
0.50
0.65 BSC
0.20
–
0.010
0.006
0.115
0.069
0.042
0.008
0.072
0.054
0.036
0.018
0.012
0.008
0.118
0.074
0.047
0.010
0.075
0.059
0.041
0.020
0.026 BSC
0.008
–
C
D
D1
D2
D3
E
E1
E2
E3
e
H
0.15
0.25
0.30
0.20
0.20
0.30
0.25
0.006
0.010
0.012
0.008
0.008
0.012
0.010
K
–
–
K1
K2
K3
L
–
–
–
–
–
–
–
–
–
–
–
–
0.35
0.40
0.014
0.016
C14-0630-Rev. E, 21-Jul-14
DWG: 5940
Note
Millimeters will govern
•
Revision: 21-Jul-14
Document Number: 73203
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR Power
P
A
K
®
ChipFET
®
Single
0.225
(0.009)
0.350
(0.014)
0.650
(0.026)
0.200
(0.00
8
)
0.300
(0.012)
0.300
(0.012)
0.100
(0.004)
0.250
(0.010)
0.500
(0.020)
0.350
(0.014)
0.350
(0.014)
1.
8
70
0.305
(0.074)
(0.012)
2.575
(0.101)
Recommended Minim
u
m Pads
Dimensions in mm/(Inches)
Return to Index
Document Number: 69948
Revision: 21-Jan-08
9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
