Vishay-Intertech-SI8416DB-T2-E1
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Si8416DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
) MAX.
0.023 at V
GS
= 4.5 V
0.025 at V
GS
= 2.5 V
0.030 at V
GS
= 1.8 V
0.040 at V
GS
= 1.5 V
0.095 at V
GS
= 1.2 V
I
D
(A)
d
16
Q
g
(TYP.)
• Ultra-small 1.5 mm x 1 mm maximum outline
• Ultra-thin 0.59 mm maximum height
16
• Material categorization:
for definitions of compliance please see
8
16
17 nC
15
3
MICRO FOOT
®
1.5 x 1
APPLICATIONS
D
S
2
S
• Low on-resistance load switch for
portable devices
– Low power consumption,
low voltage drop
– Increased battery life
3
D
4
xxxx
xxx
1
G
6
S
G
– Space Saving on PCB
5
D
1
Back
s
ide View
Bump
S
ide View
Marking Code:
xxxx = 8416
xxx = Date / lot traceability code
Ordering Information:
S
N-Channel MOSFET
Si8416DB-T2-E1 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
8
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
5
T
C
= 25 °C
16
e
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
16
e
Continuous Drain Current (T
J
= 150 °C)
I
D
9.3
a, b
7.4
a, b
20
A
Pulsed Drain Current (t = 300 μs)
I
DM
I
S
T
C
= 25 °C
11
2.3
a, b
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
C
= 70 °C
13
T
8.4
Maximum Power Dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
2.77
a, b
1.77
a, b
-55 to +150
260
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
T
J
, T
stg
°C
IR/Convection
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, f
Maximum Junction-to-Case (Drain)
g
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
37
7
45
°C/W
Steady State
R
thJC
9.5
Notes
a. Surface
mounted on 1″ x 1″ FR4 board.
b. t
= 10 s.
c. Refer
to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d.
Case in defined as the top surface of the package.
e.
T
C
= 25 °C package limited.
f. Maximum
under steady state conditions is 85 °C/W.
g.
Case is defined as top surface of the package.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8416DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0, I
D
= 250 μA
I
D
= 250 μA
8
–
2.2
-2.7
–
–
–
V
V
DS
Temperature Coefficient
–
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
–
V
DS
= V
GS
, I
D
= 250 μA
0.35
0.80
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
5 V
–
–
–
5
–
–
–
–
–
–
–
nA
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 4.5 V
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
μA
A
–
10
I
D(on)
–
–
V
GS
= 4.5 V, I
D
= 1.5 A
0.019
0.021
0.023
0.027
0.040
22
0.023
0.025
0.030
0.040
0.095
–
V
V
GS
= 2.5 V, I
D
= 1 A
GS
= 1.8 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
S
V
GS
= 1.5 V, I
D
= 0.5 A
GS
= 1.2 V, I
D
= 0.5 A
V
Forward Transconductance
a
Dynamic
b
g
fs
V
DS
= 4 V, I
D
= 1.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
1470
580
450
17
–
–
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1.5 A
pF
–
26
–
Q
gs
Q
gd
Rg
1.8
3.4
2.5
13
nC
–
V
GS
= 0.1 V, f = 1 MHz
–
Turn-On Delay Time
Rise Time
t
d(on)
t
r
t
d(off)
t
f
25
30
80
20
15
V
DD
= 4 V, R
L
= 2.7
ns
I
D
1.5 A, V
GEN
= 4.5 V, R
g
= 1
Turn-Off Delay Time
Fall Time
40
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I
S
T
C
= 25 °C
–
–
20
A
Pulse Diode Forward Current
Body Diode Voltage
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
20
1.2
70
35
–
I
S
= 1.5 A, V
GS
= 0
0.7
35
18
13
22
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
15
10
5
10
V
GS
= 5 V thru 1.5 V
8
6
T
C
= 25
°
C
4
T
C
= 125
°
C
2
T
C
= – 55
°
C
V
GS
= 1 V
2.5
0
0
0.0
0.5
1.0
1.5
2.0
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
2400
2000
1600
1200
800
400
0
V
GS
= 1.2 V
C
i
ss
V
GS
= 1.5 V
C
o
ss
V
GS
= 1.8 V
C
r
ss
V
GS
= 4.5 V
V
GS
= 2.5 V
0
4
8
12
16
20
0
2
4
6
8
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1.5 A
V
GS
= 1.5 V; I
D
= 0.5 A
I
D
= 1.5 A
V
D
S
= 4 V
4
3
2
1
0
V
D
S
= 2 V
V
GS
= 1.2 V; I
D
= 0.5 A
V
D
S
= 6.4 V
– 50
– 25
0
25
50
75
100 125 150
0
4
8
12
16
20
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63716
S15-0932-Rev. B, 20-Apr-15
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
I
D
= 1.5 A
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
D
= 250 μA
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
J
– Temperature (
°
C)
Pul
s
e (
s
)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
D
S
(on)
*
100 μ
s
10
1
1 m
s
10 m
s
100 m
s
1
s
10
s
DC
0.1
T
A
= 25
°
C
BVD
SS
Limited
10 100
0.01
0.1
1
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
12
9
24
20
16
12
8
Package Limited
6
3
4
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Ambient Temperature (
°
C)
T
– Ca
s
e
T
e
mperature (°C)
C
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
0.02
S
ingle Pul
s
e
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 85 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4.
S
urface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
S
ingle Pul
s
e
0.1
-3
-1
-4
-2
10
10
10
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
MICRO FOOT
®
: 6-Bump
(1.5 mm x 1 mm, 0.5 mm Pitch, 0.250 mm Bump Height)
6x Ø b1
D
S
S
S
XXXX
G
D
XXX
s
e
e
s
Mark on Backside of Die
E
6x Ø 0.24 to 0.26 (Note 3)
Solder mask ~ Ø 0.25
NOTE 5
A
B
C
b
e
e
K
Bump (Note 2)
Recommended Land Pattern
Notes
(unless otherwise specified)
1. Six (6) solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
MILLIMETERS
NOM.
0.575
INCHES
NOM.
DIM.
MIN.
0.510
0.220
0.290
0.297
MAX.
0.590
0.280
0.310
0.363
MIN.
MAX.
0.0232
0.0110
0.0122
0.0143
A
A
1
A
2
b
0.0201
0.0087
0.0114
0.0116
0.0226
0.0098
0.0118
0.0129
0.0098
0.0197
0.0090
0.0378
0.0575
0.0025
0.250
0.300
0.330
b1
e
0.250
0.500
s
0.210
0.920
1.420
0.028
0.230
0.250
1.000
1.500
0.102
0.0082
0.0362
0.0559
0.0011
0.0098
0.0394
0.0591
0.0040
D
0.960
E
1.460
K
0.065
Note
•
Use millimeters as the primary measurement.
ECN: T15-0140-Rev. A, 20-Apr-15
DWG: 6035
Revison: 20-Apr-15
Document Number: 69426
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
