Vishay-Intertech-SI8851EDB-T2-E1
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Si8851EDB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET
®
power MOSFET
• Small 2.4 mm x 2 mm outline area
• Low 0.4 mm max. profile
V
DS
(V)
R
DS(on)
(
) Max.
I
D
(A)
a, d
Q
g
(Typ.)
0.0080 at V
GS
= -4.5 V
0.0086 at V
GS
= -3.7 V
0.0110 at V
GS
= -2.5 V
0.0185 at V
GS
= -1.8 V
-16.7
-16.1
70 nC
-14.2
-20
• Typical ESD protection 6000 V HBM
-11
• Material categorization: for definitions
®
Power MICRO FOOT
2.4 x 2
S
APPLICATIONS
5
4
• Battery switch / load switch
• Power management
3
0.4 mm
2
1
G
8851
xxx
• For smart phones, tablet PCs, and
mobile computing
A
B
C
G
D
S
D
E
F
A1
D
Back
s
ide View
Bump
S
ide View
P-Channel MOSFET
Ordering Information
:
Si8851EDB-T2-E1 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
8
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
-16.7
a
-13.4
a
-7.7
b
-6.2
b
-80
-2.6
a
-0.55
b
3.1
a
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous Source-Drain Diode Current
2
a
Maximum Power Dissipation
P
D
W
0.66
b
0.43
b
-55 to +150
260
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
T
J
, T
stg
VPR
°C
IR/Convection
260
Notes
a. Surface
mounted on 1″ x 1″ FR4 board with full copper, t = 5 s.
b. Surface
mounted on 1″ x 1″ FR4 board with minimum copper, t = 5 s.
c. Refer
to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Based
on T
A
= 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Typical
Maximum
40
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Ambient
c, d
t = 5 s
t = 5 s
30
R
thJA
°C/W
145
188
Notes
a. Surface
mounted on 1″ x 1″ FR4 board with full copper.
b. Maximum
under steady state conditions is 85 °C/W.
c. Surface
mounted on 1″ x 1″ FR4 board with minimum copper.
d. Maximum
under steady state conditions is 330 °C/W.
S15-1120-Rev. B, 18-May-15
Document Number: 64197
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8851EDB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
V
DS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
-20
–
-11
3
–
–
–
V
mV/°C
V
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
–
–
–
V
DS
= V
GS
, I
D
= -250 μA
-0.45
-1
0.5
10
-1
-10
–
V
DS
= 0 V, V
GS
=
4.5 V
8 V
–
–
–
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
=
–
μA
A
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -7 A
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
–
–
I
D(on)
-5
–
–
0.0060 0.0080
0.0065 0.0086
0.0081 0.0110
0.0130 0.0185
V
GS
= -3.7 V, I
D
= -7 A
–
Drain-Source On-State Resistance
a
R
DS(on)
S
V
GS
= -2.5 V, I
D
= -5 A
–
V
GS
= -1.8 V, I
D
= -3 A
–
Forward Transconductance
a
Dynamic
b
g
fs
V
DS
= -10 V, I
D
= -7 A
–
50
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6900
640
715
120
70
–
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -5 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -5 A
V
GS
= -0.1 V, f = 1 MHz
pF
–
180
105
–
Total Gate Charge
Q
g
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
8
Gate-Drain Charge
14
–
Gate Resistance
2.3
35
–
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
70
80
230
70
30
20
220
50
Rise Time
40
V
DD
= -10 V, R
L
= 2
I
D
-5 A, V
GEN
= -4.5 V, R
g
= 1
Turn-Off Delay Time
115
35
Fall Time
ns
Turn-On Delay Time
15
Rise Time
10
V
DD
= -10 V, R
L
= 2
I
D
-5 A, V
GEN
= -8 V, R
g
= 1
Turn-Off Delay Time
110
25
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
A
= 25 °C
–
–
–
–
–
–
–
–
–
-2.6
-80
-1.2
80
60
–
A
I
S
= -5 A, V
GS
= 0 V
-0.8
40
30
16
24
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= -5 A, dI/dt = 100 A/μs,
T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1120-Rev. B, 18-May-15
Document Number: 64197
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8851EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-1
2.00
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
1.60
1.20
0.80
0.40
0.00
T
J
= 25
°
C
T
J
= 150
°
C
T
J
= 25
°
C
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
GS
–
G
ate-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
16
12
8
80
V
GS
= 5 V thru 2.5 V
V
GS
= 2 V
60
40
20
T
C
= 25
°
C
4
T
C
= 125
°
C
V
GS
= 1.5 V
T
C
= – 55
°
C
1.2 1.5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
0.6
0.9
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.060
10000
V
GS
= 1.8 V
0.050
0.040
0.030
0.020
0.010
0.000
8000
6000
4000
2000
0
C
i
ss
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 4.5 V
C
o
ss
C
r
ss
0
20
40
60
80
0
4
8
12
16
20
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S15-1120-Rev. B, 18-May-15
Document Number: 64197
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8851EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
1.4
V
GS
= 4.5, 3.7 V, I
D
= 7 A
V
GS
= 2.5 V, I
D
= 5 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
D
= 5 A
V
D
S
= 5 V
V
D
S
= 10 V
V
GS
= 1.8 V, I
D
= 5 A
V
D
S
= 16 V
0
20
40
60
80
100
120
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
1
T
J
= 150
°
C
I
D
= 7 A
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
30
25
20
15
10
5
I
D
= 250 μA
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Document Number: 64197
S15-1120-Rev. B, 18-May-15
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8851EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
Limited by
R
D
S
(on)
*
I
DM
Limited
100
10
I
D
Limited
100 u
s
1 m
s
10 m
s
1
100 m
s
1
s
10
s
DC
0.1
0.01
T
A
= 25
°
C
BVD
SS
Limited
0.01
0.1
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
1
10
100
Safe Operating Area, Junction-to-Ambient
a
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Current Derating
a
Power Derating
a
Note
a. When
mounted on 1″ x 1″ FR4 with full copper and t = 5 s
S15-1120-Rev. B, 18-May-15
Document Number: 64197
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si8851EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
0.1
P
DM
t
1
t
2
t
1
1. Duty Cycle, D =
0.05
t
2
2. Per Unit Ba
s
e = R
= 330 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
0.02
4.
S
urface Mounted
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1″ x 1″ FR4 Board with minimum Copper)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 65 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
S
ingle Pul
s
e
4.
S
urface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1″ x 1″ FR4 Board with maximum Copper)
S15-1120-Rev. B, 18-May-15
Document Number: 64197
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
MICRO FOOT
®
: 30-Bumps
(2.4 mm x 2 mm, 0.4 mm Pitch, 0.184 mm Bump Height)
30x Ø 0.205 to 0.225
S
older ma
s
k~Ø 0.215
30x Ø b1
Index-bump (Note 6)
e
e
e
e
5
4
2
1
3
D
S
D
S
D
S
D
S
D
S
D
S
D
S
D
S
D
S
G
S
D
S
D
S
G
S
D
S
D
S
A
B
C
D
E
F
0.40
s
e
e
e
e
T
o
p
s
ide (die back)
D
Recommended land pattern
Bump
s
ide view
K
b
Bump (Note 1)
b1
Notes
1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
MILLIMETERS
NOM.
0.365
INCHES
NOM.
DIM.
MIN.
0.328
0.136
0.192
0.200
MAX.
0.402
0.184
0.218
0.240
MIN.
MAX.
0.0158
0.0072
0.0086
0.0094
A
A1
A2
b
0.0129
0.0054
0.0076
0.0079
0.0144
0.0063
0.0081
0.0087
0.0069
0.0157
0.0071
0.0772
0.0929
0.0028
0.160
0.205
0.220
b1
e
0.175
0.400
s
0.160
1.920
2.320
0.040
0.180
0.200
2.000
2.400
0.100
0.0063
0.0756
0.0913
0.0016
0.0079
0.0787
0.0945
0.0039
D
1.960
E
2.360
K
0.070
Note
•
Use millimeters as the primary measurement.
ECN: T15-0177-Rev. A, 27-Apr-15
DWG: 6040
Revision: 27-Apr-15
Document Number: 69366
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
