Vishay-Intertech-SI9435BDY-T1-E3
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Si9435BDY
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D
TrenchFET
r
Power MOSFET
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.042 @ V
=
−
10 V
−
5.7
−
5.0
−
4.4
GS
−
30
0.055 @ V
=
−
6
V
GS
0.070 @ V
=
−
4.5
V
GS
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
D
Ordering Information:
Si9435BDY
Si9435BD
Y
–
T1 (with
T
a
pe and Reel)
P-Channel MOSFET
ABSOLUTE MAXIMUM R
A
T
INGS (T
= 25
_
C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−
30
DS
V
V
GS
“
20
T
= 25
_
C
= 70
_
C
−
4.1
−
3.2
−
5.7
−
4.6
A
a
Continuous Drain Current (T
= 150
_
C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−
30
a
continuous Source Current (Diode Conduction)
I
−
2.3
2.5
−
1.1
1.3
S
T
= 25
_
C
= 70
_
C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.6
0.8
Operating Junction and Storage
T
e
mperature Range
T , T
−
55 to 150
_
C
J
stg
THERMAL RESISTANCE R
A
T
INGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
Steady State
Steady State
40
70
24
50
95
30
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_
C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface
Mounted on 1” x 1” FR4 Board.
Document Number:
72245
S-32274—Re
v
.
B
, 03-Nov-03
1
Si9435BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
= 25
_
C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V
, I
=
−
250
m
A
−
1.0
−
3.0
“
100
−
1
V
GS(th)
DS
GS
D
V
= 0
V
, V
=
“
20 V
GS
I
nA
DS
GSS
V
=
−
30
V
, V
= 0 V
GS
DS
Zero Gate Voltage Drain Current
I
m
A
DSS
V
DS
=
−
30
V
, V
= 0 V, T
=
7
0
_
C
−
5
GS
J
V
DS
v
−
10
V
, V
=
−
10 V
−
20
−
5
GS
b
On-State Drain Current
I
A
D(on)
V
DS
v
−
5
V
, V
=
−
4.5 V
GS
V
=
−
10
V
, I
=
−
5.7 A
0.033
0.043
0.042
0.055
0.070
GS
D
b
Drain-Source On-State Resistance
r
W
V
=
−
6
V
, I
=
−
5 A
DS(on)
GS
D
V
GS
=
−
4.5
V
, I
=
−
4.4 A
0.056
13
D
b
Forward Transconductance
g
V
=
−
15
V
, I
=
−
5.7 A
S
V
fs
DS
D
b
Diode Forward Voltage
V
SD
I
S
=
−
2.3 A, V
= 0 V
−
0.8
−
1.1
GS
Dynamic
a
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
16
2.3
4.5
8.8
14
14
42
30
30
24
g
Q
Q
V
=
−
15
V
,
V =
−
10
V
, I
=
−
3.5 A
nC
gs
gd
DS
GS
D
R
g
W
t
25
25
70
50
60
d(on)
t
r
V
=
−
15
V
, R
=
1
5
W
L
GEN G
DD
I
D
^
−
1 A, V
=
−
10
V
, R
= 6
W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
Notes
a. Guaranteed
by design, not subject to production testing.
b. Pulse
test; pulse width
v
300
m
s, duty cycle
v
2%.
t
rr
I =
−
1.2 A, di/dt = 100 A/
m
s
F
Document Number:
72245
S-32274—Re
v
.
B
, 03-Nov-03
2
Si9435BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
25
20
15
10
5
30
5 V
V
GS
= 10 thru 6 V
25
20
15
10
5
4 V
T
= 125
_
C
C
25
_
C
3 V
4
−
55
_
C
0
0
0
0
1
2
3
4
5
1
2
3
5
V
DS
−
Drain-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
On-Resistanc
e
v
s. Drain Current
Capacitance
1100
880
660
440
220
0
0.15
0.12
0.09
0.06
0.03
C
iss
V
GS
= 4.5 V
V
= 6 V
GS
C
oss
V
GS
= 10 V
16
C
rss
0.00
0
4
8
12
20
0
5
10
15
20
25
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 3.5 A
I =
5.7 A
D
8
6
4
2
0
0.0
3.2
6.4
9.6
12.8
16.0
−
50
−
25
0
25
50
75
100 125 150
Q
−
T
o
tal Gate Charge (nC)
T
−
Junction
T
e
mperature (
_
C)
g
J
Document Number:
72245
S-32274—Re
v
.
B
, 03-Nov-03
3
Si9435BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
50
T
= 150
_
C
J
10
I
D
= 5.7
A
T
= 25
_
C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.4
150
120
I
D
= 250
m
A
90
60
0.2
0.0
−
0.2
−
0.4
30
0
−
3
−
2
−
1
−
50
−
25
0
25
50
75
100 125 150
10
10
10
1
10
T
−
T
e
mperature (
_
C)
Time (sec)
J
Safe Operating Area, Junction-to-Foot
100
10
1
Limited by r
DS(on)
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25
_
C
C
Single Pulse
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Document Number:
72245
S-32274—Re
v
.
B
, 03-Nov-03
4
Si9435BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70
_
C/W
thJA
(t)
3. T
−
T =
P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−
4
−
3
−
2
−
1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−
4
−
3
−
2
−
1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number:
72245
S-32274—Re
v
.
B
, 03-Nov-03
5
