Vishay-Intertech-SIA430DJT-T1-GE3
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SiA430DJT
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Thermally enhanced PowerPAK
®
SC-70 package
– Small footprint area
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
) MAX.
0.0135 at V
GS
= 10 V
0.0185 at V
GS
= 4.5 V
I
D
(A)
b, c
Q
g
(Typ.)
12
a
20
5.3 nC
10.8
– Ultra-thin 0.6 mm height
• 100 % R
g
tested
Thin PowerPAK
®
S
C-70-6L
S
in
g
le
• Material categorization:
for definitions of compliance please see
D
D
5
6
S
4
APPLICATIONS
0.6 mm
D
• Load switch
S
7
1
D
• DC/DC conversion
2
D
3
G
G
Top View
Bottom View
Marking Code
: AY
Ordering Information
:
S
SiA430DJT-T1-GE3 (Lead (Pb)-free and halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
12
a
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
12
a
Continuous Drain Current (T
J
= 150 °C)
I
D
12
a, b, c
10.1
b, c
40
12
a
2.9
b, c
A
Pulsed Drain Current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
C
= 70 °C
19.2
T
12.3
Maximum Power Dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
3.5
b, c
2.2
b, c
-55 to +150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
SYMBOL
TYPICAL
28
MAXIMUM
UNIT
t
≤
5 s
Steady State
R
thJA
R
thJC
36
°C/W
Maximum Junction-to-Case (Drain)
5.3
6.5
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. See
solder profile (
www.vishay.com/doc?73257
). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 80 °C/W.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA430DJT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
20
–
–
–
–
V
V
DS
Temperature Coefficient
24
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
-5.6
–
V
DS
= V
GS
, I
D
= 250 μA
1
–
–
–
–
–
–
3
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
1
nA
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
10
–
20
–
V
GS
= 10 V, I
D
= 7 A
0.0108 0.0135
0.0146 0.0185
Drain-Source On-State Resistance
a
Ω
S
V
GS
= 4.5 V, I
D
= 5 A
–
Forward Transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 7 A
–
16
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
800
200
90
12
5.3
2
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
–
pF
–
–
V
DS
= 10 V, V
GS
= 10 V, I
D
= 12 A
–
18
9
Total Gate Charge
Q
g
–
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12 A
f = 1 MHz
–
–
Gate-Drain Charge
–
1.4
2.5
16
10
15
10
10
8
–
Gate Resistance
0.5
–
5
Ω
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
25
15
25
15
15
15
30
15
Rise Time
–
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-Off Delay Time
–
Fall Time
–
ns
Turn-On Delay Time
–
Rise Time
–
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
–
17
8
Fall Time
–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
12
40
1.2
30
15
–
A
I
S
= 5 A, V
GS
= 0 V
0.8
18
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
8
ns
t
b
10
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA430DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
40
32
24
16
8
5
4
3
2
1
0
V
GS
= 10 V thru 5 V
V
= 4 V
T
= – 55 °C
GS
C
T
= 125 °C
C
V
GS
= 3 V
T
C
= 25 °C
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
800
600
400
200
0
0.025
0.020
0.015
0.010
0.005
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
5
10
15
20
0
8
16
24
32
40
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
D
= 12 A
I
D
= 7 A
V
GS
= 10 V
V
= 10 V
DS
V
DS
= 5 V
6
V
DS
= 15 V
4
2
0
0
3
6
9
12
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction
T
e
mperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62991
S14-2236-Rev. A, 10-Nov-14
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA430DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
0.055
0.045
0.035
0.025
0.015
0.005
100
10
1
I
= 5 A
D
T
= 25 °C
J
T
J
= 150 °C
0.1
0.01
T
= 125 °C
J
T
J
= – 50 °C
1.0
T
= 25 °C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.1
30
25
20
15
10
5
– 0.1
– 0.3
– 0.5
– 0.7
I
= 1 mA
D
I
= 250 µA
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
100
Limited by R
Single Pulse Power (Junction-to-Ambient)
*
10 µs
DS(on)
100 µs
10
1 ms
1
0.1
10 ms
100 ms
DC
T
A
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
4
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA430DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
25
20
15
10
5
35
28
21
14
7
Package Limited
0
0
0
25
50
T
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
–
T
e
mperature (°C)
J
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA430DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
J
= 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S14-2236-Rev. A, 10-Nov-14
Document Number: 62991
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
Case Outline for PowerPAK
®
SC70T
D
A
b
e
e
b
PIN3
PIN3
PIN1
PIN2
PIN1
PIN2
D3
D2
D2
D2
Terminal #1
PIN6
PIN4
PIN4
PIN6
PIN5
PIN5
Top
s
ide View
K3
K1
K2
K2
K2
K1
Back
s
ide View of
S
ingle
Back
s
ide View of Dual
Z
Detail Z
Z
S
ide View
SINGLE PAD
DUAL PAD
DIM.
MILLIMETERS
NOM.
INCHES
NOM.
0.024
–
0.012
0.008
0.081
0.037
0.009
0.081
0.059
0.016
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.011
MILLIMETERS
INCHES
NOM.
0.024
–
0.012
0.008
0.081
0.024
MIN.
0.525
0
MAX.
MIN.
0.0206
0
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
NOM.
0.60
–
0.30
0.20
2.05
0.613
MAX.
0.65
0.05
0.38
0.25
2.15
0.713
MIN.
0.0206
0
0.009
0.006
0.078
0.020
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
0.60
–
0.30
0.20
2.05
0.95
0.235
2.05
0.65
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
1.50
0.395
0.475
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
Document Number: 65370
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
