Vishay-Intertech-SIA537EDJ-T1-GE3
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SiA537EDJ
Vishay Siliconix
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFETs
PowerPAK
®
S
C-70-6L Dual
D
1
6
G
2
5
• Typical ESD protection:
N-channel 2400 V, P-channel 2000 V
S
2
4
D
1
• 100 % R
g
tested
D
2
• Material categorization: for definitions of
1
2
G
1
S
1
APPLICATIONS
3
D
2
• Portable devices such as smart phones, tablet PCs and
mobile computing
Top View
Bottom View
Marking code:
EK
– Load switches
– Power management
– DC/DC converters
PRODUCT SUMMARY
D
1
S
2
N-CHANNEL
P-CHANNEL
-20
V
DS
(V)
12
0.028
0.033
0.042
–
R
R
R
R
DS(on)
(
) at V
GS
DS(on)
(
) at V
GS
DS(on)
(
) at V
GS
=
=
=
4.5 V
2.5 V
1.8 V
0.054
0.070
0.104
0.165
9.5
G
1
G
2
DS(on)
(
) at V
GS
= -1.5 V
Q
g
typ. (nC)
D
(A)
a
Configuration
6.2
I
4.5
-4.5
D
2
S
1
N-Channel MOSFET
N- and p-pair
P-Channel MOSFET
ORDERING INFORMATION
Package
SC-70
SiA537EDJ-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
-20
UNIT
Drain-source voltage
Gate-source voltage
V
DS
12
V
V
GS
8
8
T
C
= 25 °C
C
= 70 °C
4.5
a
4.5
a
4.5
a, b, c
4.5
a, b, c
20
-4.5
a
-4.5
a
-4.5
a, b, c
-4.5
a, b, c
-15
-4.5
a
-1.6
b, c
7.8
T
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed drain current (t = 100 μs)
Source drain current diode current
I
DM
I
S
T
C
= 25 °C
4.5
a
1.6
b, c
T
A
= 25 °C
T
C
= 25 °C
7.8
T
C
= 70 °C
5
5
Maximum power dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
1.9
b, c
1.2
b, c
1.9
b, c
1.2
b, c
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
-55 to +150
260
°C
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
N-CHANNEL
P-CHANNEL
PARAMETER
SYMBOL
UNIT
TYP.
52
MAX.
65
TYP.
52
MAX.
65
Maximum junction-to-ambient
b, f
Maximum junction-to-case (drain)
t
5 s
R
thJA
R
thJC
°C/W
Steady state
12.5
16
12.5
16
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 5 s
d. See
solder profile (
www.vishay.com/ppg?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: Manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 110 °C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Static
V
GS
= 0 V, I
D
= 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
P-Ch
N-Ch
P-Ch
12
–
–
–
Drain-source breakdown voltage
V
DS
V
mV/°C
V
V
GS
= 0 V, I
D
= -250 μA
-20
–
I
D
= 250 μA
–
8
–
V
DS
temperature coefficient
GS(th)
temperature coefficient
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
D
= -250 μA
–
-15
–
I
D
= 250 μA
–
-2.5
–
V
I
D
= -250 μA
–
2.5
–
–
V
DS
= V
GS
, I
D
= 250 μA
0.4
1
Gate threshold voltage
Gate-source leakage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
–
-1
0.5
3
–
–
–
V
DS
= 0 V, V
GS
=
4.5 V
8 V
–
I
GSS
–
–
5
V
DS
= 0 V, V
GS
=
–
–
30
1
μA
V
DS
= 12 V, V
GS
= 0 V
–
–
V
DS
= -20 V, V
GS
= 0 V
–
–
-1
10
-10
–
Zero gate voltage drain current
On-state drain current
b
I
DSS
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
–
–
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
–
–
V
DS
5 V, V
GS
= 4.5 V
10
-10
–
–
I
D(on)
A
S
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= 4.5 V, I
D
= 5.2 A
–
–
0.023 0.028
0.044 0.054
0.027 0.033
0.057 0.070
0.035 0.042
0.075 0.104
0.097 0.165
V
GS
= -4.5 V, I
D
= -3.8 A
–
V
GS
= 2.5 V, I
D
= 4.8 A
GS
= -2.5 V, I
D
= -3.3 A
–
Drain-source on-state resistance
b
Forward transconductance
b
R
DS(on)
V
–
V
GS
= 1.8 V, I
D
= 2.5 A
GS
= -1.8 V, I
D
= -1 A
GS
= -1.5 V, I
D
= -0.5 A
V
DS
= 6 V, I
D
= 5.2 A
–
V
–
V
–
–
23
11
–
–
g
fs
V
DS
= -6 V, I
D
= -3.6 A
–
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
455
770
190
90
–
–
Input capacitance
C
iss
C
oss
C
rss
N-Channel
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
V
–
–
Output capacitance
pF
–
–
P-Channel
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
–
150
81
–
V
Reverse transfer capacitance
–
–
V
DS
= 6 V, V
GS
= 8 V, I
D
= 6.8 A
DS
= -10 V, V
GS
= -8 V, I
D
= -4.9 A
–
10.5
16.3
6.2
9.5
0.8
1.4
1.6
2.3
4
16
25
9.5
14.5
–
V
–
Total gate charge
Q
g
–
N-Channel
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 6.8 A
–
nC
–
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
–
–
P-Channel
DS
= -10 V, V
GS
= -4.5 V, I
D
= -4.9 A
–
–
V
–
–
0.8
1
–
8
f = 1 MHz
5.1
10
10
15
25
20
25
40
45
20
15
10
16
15
20
30
40
15
15
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
15
N-Channel
DD
= 6 V, R
L
= 1.1
I
D
5.4 A, V
GEN
= 4.5 V, R
g
= 1
V
–
12
–
15
–
25
P-Channel
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
Fall time
–
30
V
–
12
–
10
ns
–
5
Turn-on delay time
Rise time
–
7
N-Channel
DD
= 6 V, R
L
= 1.3
I
D
5.4 A, V
GEN
= 8 V, R
g
= 1
V
–
10
–
12
–
20
P-Channel
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -8 V, R
g
= 1
Turn-off delay time
–
25
V
–
10
Fall time
–
10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.5
-4.5
20
-15
1.2
-1.2
50
25
20
12
–
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
A
–
Pulse diode forward current
a
Body diode voltage
–
I
S
= 4.8 A, V
GS
= 0 V
I
S
= -3.9 A, V
GS
= 0 V
0.8
-0.9
25
13
10
5.5
13
7.5
12
5.5
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
N-Channel
I
F
= 5.4 A, di/dt = 100 A/μs,
T
J
= 25 °C
Q
rr
t
a
P-Channel
I
F
= -3.9 A, di/dt = -100 A/μs,
T
J
= 25 °C
–
ns
–
Reverse recovery rise time
t
b
–
Notes
a. Guaranteed
by design, not subject to production testing
b. Pulse
test; pulse width
300 μs, duty cycle
2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
-2
-3
-4
-5
-6
-7
-8
-9
4
3
2
1
0
10
10
10
10
10
10
10
10
T
J
= 25 °C
T
= 150 °C
J
T
= 25 °C
J
-10
10
0
3
6
9
12
15
0
3
6
9
12
15
V
– Gate-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
GS
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
16
12
8
10
V
= 5 V thru 2 V
GS
8
6
4
2
0
V
= 1.5 V
GS
T
C
= 25 °C
4
T
C
= 125 °C
V
= 1 V
GS
T
C
= – 55 °C
1.2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
V
0.6
0.9
1.5
– Gate-to-Source Voltage (V)
V
– Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
800
0.08
600
400
200
0
0.06
0.04
0.02
0.00
V
GS
= 1.8 V
C
iss
V
= 2.5 V
GS
C
oss
C
rss
V
= 4.5 V
GS
0
3
6
9
12
0
5
10
– Drain Current (A)
15
20
I
V
– Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
8
6
4
2
0
I
= 6.8 A
D
V
= 1.8 V; I
= 2.5 A
D
GS
V
= 6 V
DS
V
= 9.6 V
V
= 3 V
DS
DS
V
= 4.5
V
,
2
.5 V; I
= 5.5 A
D
GS
– 50
– 25
0
25
T –
Junction
T
e
mperature (°C)
J
50
75
100 125 150
0
4
8
12
Q
–
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.08
0.06
0.04
0.02
0.00
I
= 2.5 A; T
= 125 °C
J
D
I
= 5.2 A; T
= 125 °C
J
D
T
J
= 150 °C
T
J
= 25 °C
I
T
= 2.5 A;
= 25 °C
D
J
1
I
= 5.2 A; T
= 25 °C
J
D
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
– Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
20
15
10
5
0.7
0.6
0.5
0.4
0.3
0.2
I
= 250 µA
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
1000
100
T
J
–
T
e
mperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
*
Limited by I
DM
DS(on)
10
1
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
T
= 25 °C
A
0.1
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
8
15
12
9
6
4
2
0
6
Package Limited
3
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Current Derating
a
Power Derating
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
2
2. Per Unit Base = R
= 110 °C/
W
thJA
Single P
u
lse
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Sq
u
are
W
ave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
ave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
40
30
20
10
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
10
10
10
10
10
10
10
10
10
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0
3
6
9
12
15
0
3
6
9
12
15
V
– Gate-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
GS
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
15
12
9
5
4
3
2
1
0
V
= 5 V thru 2.5 V
V
GS
= 2 V
GS
6
V
= 1.5 V
= 1 V
GS
T
= 25 °C
C
3
T
= 125 °C
0.6
C
V
GS
T
= – 55 °C
C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
0.9
1.2
1.5
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
1500
1200
900
600
300
0
V
= 1.5 V
GS
0.16
0.12
0.08
0.04
0
C
i
ss
V
= 1.8 V
GS
V
= 2.5 V
V
GS
= 4.5 V
C
o
ss
GS
C
r
ss
0
3
6
9
12
15
0
4
8
12
16
20
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
8
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
= 4.9 A
D
V
V
= 2.5 V; 4.5 V; I
= 3.8 A
D
GS
V
= 10 V
D
S
= 1.8 V; I
= 1 A
GS
D
V
= 5 V
V
= 16 V
D
S
D
S
V
= 1.5 V; I
= 0.5 A
D
GS
0
3
6
9
12
15
18
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
1
0.18
0.15
0.12
0.09
0.06
0.03
0.00
I
= 3.8 A; T
= 25 °C
J
D
T
= 150 °C
J
I
= 1 A; T
= 125 °C
J
D
I
= 3.8 A; T
= 125 °C
J
D
T
= 25 °C
J
I
= 1 A; T
= 25 °C
J
D
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.75
0.65
0.55
0.45
0.35
0.25
20
15
10
5
I
= 250 μA
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
1000
100
T
J
– Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
9
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
*
D
S
(on)
Limited by I
DM
10
1
100 μ
s
1 m
s
10 m
s
100 m
s
T
= 25 °C
A
0.1
1
s
, 10
s
S
ingle Pul
s
e
DC
BVD
SS
Limited
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
8
12
10
8
6
4
2
0
6
Package Limited
4
2
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (°C)
T
C
– Case
T
e
mperature (°C)
Current Derating
a
Power Derating
Note
a. The
power dissipation P
D
is based on T
J
max.= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
10
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiA537EDJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
0.1
0.05
0.02
P
DM
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
2
2. Per Unit Base = R
= 110 °C/
W
thJA
Single P
u
lse
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Sq
u
are
W
ave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
ave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN
3
PIN1
PIN2
PIN
3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K
3
PIN5
K2
K1
K2
BACK
S
IDE VIEW OF
S
INGLE
BACK
S
IDE VIEW OF DUAL
D
A
Note
s
:
1. All dimen
s
ion
s a
re in millimeter
s
2. P
a
ck
a
ge o
u
tline excl
us
ive of mold fl
as
h
a
nd met
a
l
bu
rr
3
. P
a
ck
a
ge o
u
tline incl
us
ive of pl
a
ting
Z
z
DE
T
A
IL Z
SINGLE
P
A
D
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
–
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
–
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
–
–
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431
−
Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD L
A
YOUT FOR PowerPAK
®
SC70-6L Dual
2.500 (0.09
8
)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.09
8
)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
0.650 (0.026)
1
1.600 (0.063)
Dimensions in mm (inches)
Return to Index
1
Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
Vishay
Disclaimer
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Such statements are not binding
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including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
