Vishay-Intertech-SIE818DF-T1-E3
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SiE818DF
Vishay Siliconix
N-Channel 75 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PolarPAK
®
D
6
5
S
7
4
S
8
G
9
3
• Ultra low thermal resistance using top-exposed
PolarPAK
®
package for double-sided cooling
D
10
2
1
D
S
D
• Leadframe-based encapsulated package
– Die not exposed
– Same layout regardless of die size
G
D
Available
6
D
5
7
S
4
8
S
9
G
10
• Low Q
gd
/Q
gs
ratio helps prevent shoot-through
• 100 % R
g
and UIS tested
D
1
3
2
Top View
Bottom View
• Material
categorization: for definitions of compliance
Top
s
urface i
s
connected to pin
s
1, 5, 6, and 10
PRODUCT SUMMARY
V
DS
(V)
D
APPLICATIONS
75
0.0095
0.0125
33
• Primary side switch
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
R
• Half-bridge
G
Q
g
typ. (nC)
• Synchronous rectification
I
I
D
(A)
a
(package limit)
D
(A)
a
(silicon limit)
60
79
S
Configuration
Single
N-Channel MOSFET
ORDERING INFORMATION
Package
PolarPAK
Lead (Pb)-free
SiE818DF-T1-E3
SiE818DF-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
V
DS
75
V
V
GS
20
60
a
(package Limit)
T
C
= 25 °C
79 (silicon Limit)
60
a
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous drain current (T
J
= 150 °C)
I
D
16
b, c
12.9
b, c
80
60
a
4.3
b, c
A
Pulsed drain current
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
Single pulse avalanche current
Avalanche energy
I
AS
50
L = 0.1 mH
E
AS
125
mJ
W
T
C
= 25 °C
125
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
80
Maximum power dissipation
P
D
5.2
b, c
3.3
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
°C
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. See solder profile (
www.vishay.com/doc?73257
). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiE818DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a, b
Maximum junction-to-case (drain top)
Maximum junction-to-case (source)
a, c
SYMBOL
TYPICAL
20
MAXIMUM
UNIT
t
10 s
R
thJA
24
1
R
thJC
(drain)
0.8
°C/W
Steady state
R
thJC
(source)
2.2
2.7
Notes
a. Surface
mounted on 1″ x 1″ FR4 board
b. Maximum
under steady state conditions is 68 °C/W
c. Measured
at source pin (on the side of the package)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
75
–
–
–
V
78
–
mV/°C
–
-7.1
–
V
DS
= V
GS
, I
D
= 250 μA
1.5
–
2.1
3
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
nA
V
DS
= 75 V, V
GS
= 0 V
–
–
1
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
DS
= 75 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
–
–
–
10
25
–
–
V
GS
= 10 V, I
D
= 16 A
0.0078
0.0103
50
0.0095
0.0125
–
Drain-source on-state resistance
a
S
V
GS
= 4.5 V, I
D
= 14 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 20 V, I
D
= 16 A
–
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3200
330
170
63
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 38 V, V
GS
= 0 V, f = 1 MHz
pF
–
V
DS
= 38 V, V
GS
= 10 V, I
D
= 16 A
95
50
–
Total gate charge
Q
g
33
nC
Gate-source charge
Q
gs
Q
gd
R
g
V
DS
= 38 V, V
GS
= 4.5 V, I
D
= 16 A
11
Gate-drain charge
17
–
Gate resistance
f = 1 MHz
0.95
30
1.5
45
225
60
25
25
25
60
15
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
150
40
V
DD
= 38 V, R
L
= 3.8
,
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
Fall time
15
ns
Turn-on delay time
15
Rise time
15
V
DD
= 38 V, R
L
= 3.8
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Turn-off delay time
40
Fall time
10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 10 A
–
–
–
–
–
–
–
–
60
80
1.2
150
520
–
A
–
0.8
100
345
75
25
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
12
8
80
V
GS
= 10 V thru 4 V
60
40
20
0
T =
25 °C
C
T
= 125 °C
C
T
= – 55 °C
4
C
3 V
0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.012
0.011
0.010
0.009
0.008
0.007
5000
4000
3000
2000
1000
0
C
iss
V
= 4.5 V
GS
V
GS
= 10 V
C
oss
C
rss
0
20
40
60
80
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
D
= 16 A
I
D
= 16 A
V
GS
= 10
V
,
4
.5 V
8
6
4
2
0
V
DS
= 38 V
V
DS
= 60 V
0
15
30
45
60
75
– 50
– 25
0
25
T –
Junction
T
e
mperature (°C)
J
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.030
100
10
1
I
D
= 16 A
0.025
0.020
0.015
0.010
0.005
0.000
T
= 150 °C
J
125 °C
25 °C
T
= 25 °C
J
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
40
I
D
= 250 µA
30
20
10
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
–
T
e
mperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
100 µs
10
1
1 ms
10 ms
100 ms
T
A
= 25 °C
Single Pulse
1 s
0.1
10 s
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
minimum V
at which R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
140
120
100
80
60
Package Limited
60
40
20
0
40
20
0
25
50
75
T –
Case
T
e
mperature (°C)
C
100
125
150
0
25
50
75
100
125
150
T
– Case
T
e
mperature (°C)
C
Current Derating
a
Power Derating, Junction-to-Case
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 55 °C/W
thJA
(t)
3. T
– T
= P
Z
JM DM
thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Source
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
POLARPAK™ OPTION L
Prod
u
ct datasheet/information page contain
links to applica
b
le package dra
w
ing.
M4
M4
10
D
9
8
7
6
G
S
S
D
V
ie
w
A
M2
M1
M3
M3
c
D
1
G
2
S
S
4
D
5
3
A
(Top
V
ie
w
)
H4
b
1
b
2
H1
H3
H2
b
1
H1
b
3
6
D
7
S
8
S
9
G
10
D
θ
θ
P1
Z
D1
D
P1
A
b
4
b
4
D
5
S
4
S
3
G
2
D
1
0.26
b
5
b
5
b
5
DETAIL Z
V
ie
w
A
(Bottom
V
ie
w
)
A
0.20
0.33
0.5
8
Document Number: 72945
Revision: 11-Aug-08
1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
A
MIN.
0.75
0.00
0.48
0.41
2.19
0.89
0.23
0.20
6.00
5.74
5.01
4.75
0.23
0.45
0.31
0.45
4.22
1.08
1.37
0.24
4.30
3.43
0.22
0.05
0.15
3.48
0.56
1.20
3.90
0
NOM.
0.80
–
MAX.
0.85
0.05
0.68
0.61
2.39
1.19
0.43
0.30
6.30
6.04
5.31
5.05
–
MIN.
0.030
0.000
0.019
0.016
0.086
0.035
0.009
0.008
0.236
0.226
0.197
0.187
0.009
0.018
0.012
0.018
0.166
0.043
0.054
0.009
0.169
0.135
0.009
0.002
0.006
0.137
0.022
0.047
0.153
0.000
0°
NOM.
0.031
–
MAX.
0.033
0.002
0.027
0.024
0.094
0.047
0.017
0.012
0.248
0.238
0.209
0.199
–
A1
b1
b2
b3
b4
b5
c
0.58
0.51
2.29
1.04
0.33
0.25
6.15
5.89
5.16
4.90
–
0.023
0.020
0.090
0.041
0.013
0.010
0.242
0.232
0.203
0.193
–
D
D1
E
E1
H1
H2
H3
H4
K1
K2
K3
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
θ
–
0.56
0.51
0.56
4.52
1.18
–
–
0.022
0.020
0.022
0.178
0.046
–
0.41
–
0.016
–
4.37
1.13
–
0.172
0.044
–
–
–
–
–
4.50
3.58
–
4.70
3.73
–
0.177
0.141
–
0.185
0.147
–
–
–
–
–
0.20
3.64
0.76
–
0.25
4.10
0.95
–
0.008
0.143
0.030
–
0.010
0.161
0.037
–
–
–
–
–
0.18
10°
0.36
12°
0.007
10°
0.014
12°
0°
ECN: T-08441-Rev. C, 11-Aug-08
DWG: 5946
Notes
Millimeters govern over inches.
2
Document Number: 72945
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM
P
A
DS FOR Polar
P
A
K
®
Option L and S
7.300
(0.2
8
7)
0.510
0.510
(0.020)
(0.020)
0.410
(0.016)
0.955
(0.03
8
)
0.955
(0.03
8
)
0.
8
95
(0.035)
+
0.
8
95
(0.035)
0.5
8
0
(0.023)
0.5
8
0
(0.023)
2.290
(0.090)
0.510
(0.020)
Recommended Minim
u
m for Polar
P
A
K Option L and S
Dimensions in mm/(Inches)
N
o External
T
r
aces
w
ithin Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
6
Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
