Vishay-Intertech-SIHF740STRL-GE3
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IRF740S, SiHF740S
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount
D
D
2
PAK (TO-263)
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
Available
Available
G
• Ease of paralleling
• Simple drive requirements
• Material
categorization: for definitions of compliance
D
G
S
S
Note
N-Channel MO
S
FET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.
For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
V
DS
(V)
DESCRIPTION
400
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface-mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
R
DS(on)
(
Ω
)
V
GS
= 10 V
0.55
Q
g
max. (nC)
63
9.0
Q
gs
(nC)
gd
(nC)
Q
32
Configuration
Single
ORDERING INFORMATION
Package
D
2
PAK (TO-263)
SiHF740S-GE3
IRF740SPbF
D
2
PAK (TO-263)
SiHF740STRL-GE3
a
IRF740STRLPbF
a
D
2
PAK (TO-263)
SiHF740STRR-GE3
a
IRF740STRRPbF
a
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See
device orientation
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
400
20
V
T
C
= 25 °C
10
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
6.3
A
Pulsed Drain Current
a
I
DM
40
Linear Derating Factor
1.0
W/°C
Linear Derating Factor (PCB mount)
e
Single Pulse Avalanche Energy
b
Avalanche Current
a
0.025
520
10
E
AS
I
AR
mJ
A
Repetitive Avalanche Energy
a
E
AR
13
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
T
C
= 25 °C
125
3.1
P
D
W
V/ns
°C
T
A
= 25 °C
dV/dt
4.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
T
J
, T
stg
-55 to +150
300
For 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 9.1 mH, R
g
= 25
Ω
, I
AS
= 10 A (see fig. 12)
c. I
SD
≤
10A, dI/dt
≤
120 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C
d. 1.6
mm from case
e. When
mounted on 1″ square PCB (FR-4 or G-10 material)
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91055
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF740S, SiHF740S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJA
R
thJC
–
62
Maximum Junction-to-Ambient
(PCB mount)
a
–
–
40
°C/W
Maximum Junction-to-Case (Drain)
1.0
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
400
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
2.0
–
0.49
Gate-Source Threshold Voltage
Gate-Source Leakage
–
–
–
–
–
–
4.0
100
25
250
0.55
–
V
GS
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 6.0 A
b
V
DS
= 50 V, I
D
= 6.0 A
b
=
20 V
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
Ω
5.8
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
1400
330
120
–
–
–
V
GS
= 0 V,
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
pF
–
–
–
63
9.0
32
–
I
D
= 10 A, V
DS
= 320 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
–
nC
–
–
–
14
27
50
24
–
–
–
V
DD
= 200 V, I
D
= 10 A,
ns
R
g
= 9.1
Ω
, R
D
= 20
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
–
–
Gate Input Resistance
R
g
f = 1 MHz, open drain
0.8
5.9
Ω
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
I
S
–
–
–
–
10
40
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 10 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 10 A, dI/dt = 100 A/μs
b
–
–
–
–
2.0
790
8.2
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
370
3.8
ns
μC
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91055
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF740S, SiHF740S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
I
D
= 10 A
V
GS
= 10 V
T
o
p
10
1
Bottom
10
0
4.5 V
20 µs Pulse Width
T
C
=
25 °C
10
1
10
-1
10
0
– 60 – 40 – 20
0
20 40 60 80
100 120 140
160
V
DS
, Drain-to-Source Voltage (V)
91055_01
T
J
,
Junction
T
e
mperature (°C)
91055_04
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
2500
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
= 0
V
, f = 1
M
Hz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
T
o
p
10
1
2000
1500
1000
500
C
iss
4.5 V
Bottom
10
0
C
oss
C
rss
20 µs Pulse Width
T
C
=
150 °C
0
10
-1
10
0
10
1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
91055_02
V
DS
,
Drain-to-Source Voltage (V)
91055_05
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
20
I
D
= 10 A
V
DS
= 320 V
DS
= 200 V
DS
= 80 V
150
°
C
10
1
16
12
8
V
V
25
°
C
10
0
4
20 µs Pulse Width
V
DS
=
50 V
For test circuit
see figure 13
10
-1
0
4
5
6
7
8
9
10
0
30
75
15
45
60
91055_03
V
GS
,
Gate-to-Source Voltage (V)
Q
G
,
T
o
tal Gate Charge (nC)
91055_06
Fig. 3 – Typical Transfer Characteristics
S21-0901-Rev. D, 30-Aug-2021
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91055
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF740S, SiHF740S
Vishay Siliconix
R
D
V
DS
150
°
C
V
GS
D.U.T.
10
1
R
g
+
–
25
°
C
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10
0
Fig. 10a – Switching Time Test Circuit
V
GS
= 0 V
1.30 1.50
V
DS
10
-1
90 %
0.50
0.70
0.90
1.10
V
SD
, Source-to-Drain Voltage (V)
91055_07
Fig. 7 – Typical Source-Drain Diode Forward Voltage
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
3
5
Fig. 10b – Switching Time Waveforms
Operation in this area limited
2
by R
DS(on)
10
2
5
10
µs
2
10
5
100
µs
1
ms
2
1
5
10
ms
T
C
= 25
°
C
T
J
= 150
°
C
Single Pulse
2
0.1
2
5
2
5
2
5
2
5
0.1
1
10
10
2
10
3
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 – Maximum Safe Operating Area
91055_08
10
8
6
4
2
0
25
50
75
100
125
150
T
C
, Case
T
e
mperature (°C)
91055_09
Fig. 9 – Maximum Drain Current vs. Case Temperature
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91055
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF740S, SiHF740S
Vishay Siliconix
10
1
D
=
0.5
P
DM
0.2
0.1
0.1
t
1
0.05
t
2
Single Pulse
(Thermal Response)
0.02
0.01
Notes:
1. Duty
Factor, D = t
1
/t
2
2. Peak
T
j
= P
DM
x Z
thJC
+ T
C
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
t
1
, Rectangular Pulse Duration (S)
91055_11
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T
+
R
g
V
DD
–
V
DS
I
AS
10 V
0.01
W
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
1200
1000
800
I
D
4.5 A
5.3 A
T
o
p
Bottom 10
A
600
400
200
V
DD
= 50 V
25
0
125
75
100
150
50
Starting T
J
, Junction
T
e
mperature (°C)
91055_12c
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91055
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF740S, SiHF740S
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Peak Dio
d
e Recovery
d
v/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
D.U.T.
•
•
•
Low
s
tray inductance
G
round plane
Low leakage inductance
3
current tran
s
former
–
+
2
–
4
–
+
1
R
g
•
•
•
•
dv/dt controlled by R
g
Driver
s
ame type a
s
D.U.T.
I
S
D
controlled by duty factor “D”
D.U.T. – device under te
s
t
+
V
DD
–
1
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
= 10 V
a
GS
D.U.T. I
S
D
waveform
D.U.T. V
D
S
waveform
2
Rever
s
e
recovery
current
Body diode forward
current
di/dt
3
Diode recovery
dv/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
4
I
S
D
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91055
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Dat
u
m A)
3
4
A
A
E
c2
H
L1
4
Ga
u
ge
plane
0° to
8
°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale
8
:1
A
2 x
b
2
2 x
b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b
1,
b
3
5
c1
(
b
,
b
2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
V
ie
w
A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
