Vishay-Intertech-SIHG20N50C-E3
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SiHG20N50C
Vishay Siliconix
Power MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
560
R
DS(on)
(
Ω
)
V
GS
= 10 V
0.270
• Low Figure-of-Merit R
on
x Q
g
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
Q
g
(Max.) (nC)
76
21
Q
Q
gs
(nC)
gd
(nC)
34
Configuration
Single
• Improved T
rr
/Q
rr
• Improved Gate Charge
D
• High Power Dissipations Capability
TO-247AC
• Compliant to RoHS Directive 2002/95/EC
G
S
S
N-Channel MOSFET
D
G
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG20N50C-E3
SiHG20N50C-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
500
V
V
GS
30
T
C
= 25 °C
20
Continuous Drain Current (T
J
= 150 °C)
e
V
GS
at 10 V
I
D
T
C
= 100 °C
11
A
Pulsed Drain Current
a
I
DM
80
Linear Derating Factor
Single Pulse Avalanche Energy
b
1.8
W/°C
mJ
E
AS
P
D
361
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
250
5
W
dV/dt
T
J
, T
stg
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 150
300
d
°C
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
Ω
, I
AS
= 17 A.
c. I
SD
≤
18 A, dI/dt
≤
380 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6
mm from case.
e. Limited
by maximum junction temperature.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R
thJA
–
–
°C/W
0.5
R
thJC
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
1
This datasheet is subject to change without notice.
SiHG20N50C
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
500
–
–
–
V
mV/°C
V
–
3.0
–
700
–
5.0
100
25
V
GS
=
30 V
–
–
nA
V
DS
= 500 V, V
GS
= 0 V
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
–
–
250
0.270
–
Drain-Source On-State Resistance
Forward Transconductance
R
DS(on)
g
fs
V
GS
= 10 V
I
D
= 10 A
–
0.225
6.4
Ω
V
DS
= 50 V, I
D
= 10 A
–
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
2451
300
26
2942
V
GS
= 0 V,
pF
nC
V
DS
= 25 V,
360
f = 1.0 MHz
32
76
–
65
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
I
D
= 18 A, V
DS
= 400 V
21
29
–
80
–
27
–
V
DD
= 250 V, I
D
= 18 A,
ns
R
g
= 9.1
Ω
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
32
–
44
–
Gate Input Resistance
R
g
f = 1 MHz, open drain
1.1
–
Ω
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
–
20
80
A
G
Pulsed Diode Forward Current
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 18 A, V
GS
= 0 V
–
–
–
–
–
1.5
V
ns
μC
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
503
6.7
30
–
–
–
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V = 35 V
Q
rr
I
RRM
The information shown here is a preliminary product proposal, not a commercial product datasheet.
Vishay Siliconix is not committed to produce this or any similar
product. This
information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
2
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
SiHG20N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
100
10
V
GS
T
J
=
25 °C
T
o
p
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
60
50
40
30
20
10
0
T
= 150 °C
J
T
= 25 °C
J
1
Bottom
0.1
0.01
7.0 V
0
6
12
18
24
30
5
6
7
8
9
10
V
GS
,
Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
40
3
2.5
2
V
GS
T
J
=
150 °C
T
o
p
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
I
= 17 A
D
30
20
10
0
1.5
1
V
= 10 V
Bottom
GS
7.0 V
0.5
0
0
6
12
18
24
30
– 60 – 40 – 20
T
J
0
20 40 60 80
100 120 140 160
,
Junction Temperature (°C)
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
3
This datasheet is subject to change without notice.
SiHG20N50C
Vishay Siliconix
10
5
10
4
10
3
10
2
1000
100
V
GS
= 0
V
, f = 1
M
Hz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
Operation in this area limited
by R
DS(on)
C
oss
= C
ds
+ C
gd
C
iss
10
1
100 µs
1 ms
C
oss
T
T
= 25
°
C
= 150
°
C
C
J
10 ms
Single Pulse
C
rss
0.1
10
1
100
1000
10
10 000
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 – Maximum Safe Operating Area
V
DS
,
Drain-to-Source Voltage (V)
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
20
20
I
= 17 A
D
V
V
V
= 400 V
= 250 V
= 100 V
DS
16
12
8
DS
DS
15
10
5
4
0
0
0
30
60
90
120
25
50
75
100
125
150
Q
G
, Total Gate Charge (nC)
T
C
, Case
T
e
mperature (°C)
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 9 – Maximum Drain Current vs. Case Temperature
100
T
= 150 °C
T
= 25 °C
J
J
10
1
V
= 0 V
1.1
GS
0.1
0.2
0.5
0.8
1.4
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 – Typical Source-Drain Diode Forward Voltage
4
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
SiHG20N50C
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
10
-3
0.01
10
-4
10
-2
0.1
1
Pulse Time (s)
Fig. 10 – Normalized Thermal Transient Impedance, Junction-to-Case (TO-247)
R
D
V
DS
V
DS
t
p
V
GS
D.U.T.
V
DD
R
g
+
V
–
DD
V
DS
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
AS
Fig. 11a – Switching Time Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
V
DS
90 %
Q
G
10 V
Q
GS
Q
GD
10 %
V
GS
V
G
t
d(on)
t
r
t
d(off)
t
f
Fig. 11b – Switching Time Waveforms
Charge
Fig. 13a –
Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
V
DS
Vary t
p
to obtain
required I
AS
50 k
Ω
12 V
0.2 µF
D.U.T
I
AS
R
g
+
–
0.3 µF
V
DD
+
–
V
DS
D.U.T.
10 V
0.01
Ω
V
GS
t
p
3 mA
Fig. 12a – Unclamped Inductive Test Circuit
I
G
Current sampling resistors
Fig. 13b – Gate Charge Test Circuit
I
D
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
5
This datasheet is subject to change without notice.
SiHG20N50C
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
7
ØP
(Datum B)
ØP1
B
R/2
A2
A
E/2
S
M
M
D B
Ø k
3
D2
Q
5
2 x R
(2)
D1
D
L
4
D
1
2
3
Thermal pad
5
L1
C
5
E1
A
See view B
M
M
0.01 D
B
2 x b2
3 x b
View A – A
C
2 x
e
A1
b4
M
M
0.10 C
A
(b1, b3, b5)
(b, b2, b4)
Planting
Base metal
D D
E
E
(c)
c1
C
C
(4)
Section C – C, D – D, E – E
View B
MILLIMETERS
MAX.
INCHES
MILLIMETERS
INCHES
MIN.
0.020
0.602
0.540
DIM.
A
A1
A2
b
b1
b2
b3
b4
b5
c
MIN.
4.58
2.21
1.17
0.99
0.99
1.53
1.65
2.42
2.59
0.38
0.38
19.71
13.08
MIN.
0.180
0.087
0.046
0.039
0.039
0.060
0.065
0.095
0.102
0.015
0.015
0.776
0.515
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.820
–
DIM.
D2
E
E1
e
Ø k
L
L1
N
Ø P
Ø P1
Q
R
S
MIN.
0.51
15.29
13.72
MAX.
MAX.
0.051
0.625
–
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.82
–
1.30
15.87
–
5.46 BSC
0.254
0.215 BSC
0.010
14.20
3.71
16.25
4.29
0.559
0.146
0.640
0.169
7.62 BSC
3.51
0.300 BSC
3.66
7.39
5.69
5.49
0.138
–
0.209
0.178
0.144
0.291
0.224
0.216
–
c1
D
D1
5.31
4.52
5.51 BSC
0.217 BSC
ECN: X12-0167-Rev. B, 24-Sep-12
DWG: 5971
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″).
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 24-Sep-12
Document Number: 91360
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications.
Such statements are not binding statements
about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application.
Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time.
All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) – recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards.
Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition.
We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
