Vishay-Intertech-SIHP33N60E-GE3
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SiHP33N60E
Vishay Siliconix
E Series Power MOSFET
FEATURES
D
• Low figure-of-merit (FOM): R
on
x Q
g
• Low input capacitance (C
iss
TO-220AB
)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
G
Available
• Avalanche energy rated (UIS)
S
• Material
categorization: for definitions of compliance
D
S
G
N-Channel MO
S
FET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
650
0.099
150
R
DS(on)
max. (
Ω
) at 25 °C
V
GS
= 10 V
Q
g
max. (nC)
– High-intensity discharge (HID)
– Fluorescent ballast lighting
• Industrial
Q
gs
(nC)
gd
(nC)
24
Q
42
Configuration
Single
– Welding
– Induction heating
– Motor drives
– Battery chargers
– Renewable energy
– Solar (PV inverters)
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP33N60E-E3
Lead (Pb)-free and Halogen-free
SiHP33N60E-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
600
V
V
GS
30
T
C
= 25 °C
33
21
Continuous Drain Current (T
J
= 150 °C)
V
GS
at 10 V
I
D
T
C
= 100 °C
A
Pulsed Drain Current
a
I
DM
88
Linear Derating Factor
Single Pulse Avalanche Energy
b
2.2
W/°C
mJ
W
E
AS
P
D
793
Maximum Power Dissipation
278
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
T
J
, T
stg
-55 to +150
70
°C
V
DS
= 0 V to 80 % V
DS
dV/dt
V/ns
°C
12
Soldering Recommendations (Peak temperature)
c
for 10 s
300
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
Ω
, I
AS
= 7.5 A.
c. 1.6
mm from case.
d. I
SD
≤
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
S22-0235-Rev. G, 07-Mar-2022
Document Number: 91523
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiHP33N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
–
–
°C/W
R
thJC
0.45
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
600
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
Δ
V
DS
/T
J
V
GS(th)
–
2.0
–
0.71
Gate-Source Threshold Voltage (N)
–
4.0
100
1
V
GS
V
GS
=
=
20 V
30 V
–
nA
μA
Gate-Source Leakage
I
GSS
I
DSS
–
–
V
DS
= 600 V, V
GS
= 0 V
–
–
–
1
Zero Gate Voltage Drain Current
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
–
10
0.099
–
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
R
DS(on)
g
fs
V
GS
= 10 V
I
D
= 16.5 A
–
0.083
11
Ω
V
DS
= 30 V, I
D
= 16.5 A
–
S
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
3508
156
6
–
–
–
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
pF
Effective Output Capacitance, Energy
Related
b
C
o(er)
C
o(tr)
–
–
136
468
–
–
V
GS
= 0 V, V
DS
= 0 V to 480 V
Effective Output Capacitance, Time
Related
c
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
100
24
42
28
60
99
54
0.7
150
–
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
GS
= 10 V
I
D
= 16.5 A, V
DS
= 480 V
nC
–
–
–
56
90
150
80
1.0
–
V
DD
= 480 V, I
D
= 16.5 A
R
g
= 9.1
Ω
, V
GS
= 10 V
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
Gate Input Resistance
Drain-Source Body Diode Characteristics
R
g
f = 1 MHz, open drain
0.2
Ω
D
MOSFET symbol
showing the
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
I
S
–
–
–
–
33
88
A
G
integral reverse
p – n junction diode
I
SM
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
SD
t
rr
T
J
= 25 °C, I
S
= 16.5 A, V
GS
= 0 V
–
–
–
–
0.9
503
8.5
26
1.2
1006
17
V
ns
μC
A
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V
R
= 20 V
Q
rr
I
RRM
–
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature.
b. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
c. C
oss(tr)
is a fixed capacitance that gives the charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
.
S22-0235-Rev. G, 07-Mar-2022
Document Number: 91523
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiHP33N60E
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
120
100
80
60
40
20
0
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
I
D
= 16.5 A
T
J
= 25 °C
2.5
2.0
1.5
1.0
0.5
0.0
BOTTOM 5.0
V
V
GS
= 10 V
– 60
– 40
– 20
0
20 40 60 80
100 120 140 160
0
5
10
15
20
25
30
T
J
– Junction Temperature (
°
C)
V
DS
– Drain-to-Source Voltage (V)
Fig. 1 – Typical Output Characteristics
Fig. 4 –
Normalized On-Resistance vs. Temperature
100 000
70
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
x C
ds
shorted
T
J
= 150 °C
60
50
40
30
20
10
0
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10 000
1000
C
iss
BOTTOM 5.0
V
C
oss
100
10
C
rss
5.0 V
1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Fig. 2 – Typical Output Characteristics
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
120
100
80
25
5000
20
15
C
oss
E
oss
60
500
10
40
T
= 150 °C
J
5
20
0
T
= 25 °C
10
J
50
0
0
100
200
300
V
DS
400
500
600
0
5
15
20
25
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 – Typical Transfer Characteristics
Fig. 6 – C
OSS
and E
OSS
vs. V
DS
Document Number: 91523
S22-0235-Rev. G, 07-Mar-2022
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiHP33N60E
Vishay Siliconix
35
24
20
16
12
V
DS
= 300 V
30
25
20
V
DS
= 120 V
V
DS
= 480 V
15
10
5
8
4
0
0
0
40
80
120
160
200
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
C
– Temperature (
°
C)
Fig. 7 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 – Maximum Drain Current vs. Case Temperature
750
1000
725
700
100
10
T
= 150 °C
J
ġ
675
650
625
600
T
J
= 25
°
C
ġ
1
0.1
0.01
ġ
V
GS
= 0 V
575
-60 -40
-20
0
20 40 60 80
100 120 140
160
T ,Temperature (°C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 1.6
V
SD
– Source-to-Drain Voltage (V)
J
Fig. 8 – Typical Source-Drain Diode Forward Voltage
Fig. 11 – Typical Drain-to-Source Voltage vs. Temperature
1000
Operation in this area limited
by R
*
I
DM
Limited
DS(on)
100
10
1
Limited by R
D
(
on)
*
100 µs
1 ms
T
T
= 25
°
C
= 150
°
C
10 ms
C
J
Single Pulse
BVDSS Limited
0.1
10
100
1
1000
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Fig. 9 – Maximum Safe Operating Area
S22-0235-Rev. G, 07-Mar-2022
Document Number: 91523
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiHP33N60E
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 12 – Normalized Thermal Transient Impedance, Junction-to-Case
R
D
V
DS
V
DS
t
p
V
GS
V
DD
D.U.T.
R
G
+
V
–
DD
V
DS
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
AS
Fig. 13 – Switching Time Test Circuit
Fig. 16 – Unclamped Inductive Waveforms
V
DS
Q
G
10 V
90 %
Q
GS
Q
GD
10 %
V
GS
V
G
t
d(on)
t
r
t
d(off)
t
f
Charge
Fig. 14 – Switching Time Waveforms
Fig. 17 –
Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
V
DS
50 k
Ω
Vary t
p
to obtain
required I
AS
12 V
0.2 µF
0.3 µF
D.U.T
I
AS
+
–
R
G
+
–
V
DS
V
DD
D.U.T.
V
GS
10 V
0.01
Ω
3 mA
t
p
I
G
Current sampling resistors
Fig. 18 – Gate Charge Test Circuit
I
D
Fig. 15 – Unclamped Inductive Test Circuit
S22-0235-Rev. G, 07-Mar-2022
Document Number: 91523
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiHP33N60E
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout considerations
•
Low stray inductance
•
Ground plane
D.U.T.
•
Low leakage inductance
current transformer
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
•
D.U.T. – device under test
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
SD
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level devices
Fig. 19 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S22-0235-Rev. G, 07-Mar-2022
Document Number: 91523
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-220-1
A
E
F
Ø P
1
3
2
*
M
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
INCHES
DIM.
MIN.
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
MIN.
MAX.
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
A
b
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
L(1)
Ø P
Q
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
•
Revison: 04-Nov-2021
Document Number: 66542
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
