Vishay-Intertech-SIJ478DP-T1-GE3
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SiJ478DP
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
) Max.
0.0080 at V
GS
= 10 V
0.0088 at V
GS
= 6.0 V
0.0115 at V
GS
= 4.5 V
I
D
(A)
60
a
60
a
54
Q
g
(Typ.)
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
80
17.1 nC
PowerPAK
®
SO-8L Single
APPLICATIONS
D
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
D
• LED Backlighting
G
4
G
3
S
2
S
S
1
S
N-Channel MOSFET
Ordering Information:
SiJ478DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
80
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
T
C
= 25 °C
C
= 70 °C
60
a
52.7
18.6
b, c
14.9
b, c
150
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed Drain Current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
60a
4.5
b, c
Continuous Source-Drain Diode Current
T
A
= 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
AS
30
L = 0.1 mH
E
AS
45
mJ
W
T
T
C
= 25 °C
C
= 70 °C
62.5
40
5
b, c
3.2
b, c
– 55 to 150
260
Maximum Power Dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Symbol
R
thJA
Typical
20
Maximum
Unit
t
10 s
25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.5
2.0
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d.
See solder profile (
www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as
a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 70 °C/W.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiJ478DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
80
V
V
DS
Temperature Coefficient
V
DS
/T
J
V
GS(th)
/T
J
37
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
– 6.1
V
GS(th
)
V
DS
= V
GS
, I
D
= 250 μA
1.4
30
2.6
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
nA
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
μA
A
10
I
D(on)
V
GS
= 10 V, I
D
= 20 A
0.0064
0.0070
0.0087
60
0.0080
0.0088
0.0115
Drain-Source On-State Resistance
a
R
DS(on)
g
fs
V
GS
= 6 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 20 A
S
Input Capacitance
C
iss
C
oss
C
rss
1855
950
76
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 40 V,V
GS
= 10 V, I
D
= 10 A
pF
35.5
22
54
33
26
Total Gate Charge
Q
g
V
DS
= 40 V, V
GS
= 6 V, I
D
= 10 A
17.1
5.3
7.3
57
nC
Gate-Source Charge
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 40 V,V
GS
= 4.5 V, I
D
= 10 A
Gate-Drain Charge
Output Charge
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
86
2
Gate Resistance
0.5
1.3
12
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
24
16
64
14
28
22
60
16
Rise Time
8
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Turn-Off DelayTime
32
Fall Time
7
ns
Turn-On Delay Time
14
Rise Time
11
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 6.0 V, R
g
= 1
Turn-Off DelayTime
30
Fall Time
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 5 A
60
150
1.1
75
A
0.76
38
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
36
70
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
19
ns
t
b
19
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiJ478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
120
100
80
60
40
20
0
V
GS
= 10 V thru 5 V
80
V
GS
= 4 V
60
40
T
C
= 25
°
C
20
T
C
= 125
°
C
V
GS
= 3 V
T
C
= – 55
°
C
V
GS
= 2 V
4.0
0
0.0
1.4
2.8
4.2
5.6
7.0
0.0
1.0
2.0
3.0
5.0
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
3500
2800
2100
1400
700
0.0150
0.0130
0.0110
0.0090
0.0070
0.0050
C
o
ss
C
i
ss
V
GS
= 4.5 V
V
GS
= 6.0 V
C
r
ss
V
GS
= 10 V
80
0
0
12
24
36
48
60
0
20
40
60
100
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2.0
1.7
1.4
1.1
0.8
0.5
10
8
I
D
= 10 A
V
GS
= 10 V
I
D
= 20 A
V
D
S
= 40 V
6
V
D
S
= 20 V
V
GS
= 4.5 V
V
D
S
= 60 V
4
2
0
– 50
– 25
0
25
50
75
100
125
150
0
8
16
24
32
40
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62868
S13-1386-Rev. A, 17-Jun-13
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiJ478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
0.040
0.030
0.020
0.010
0.000
10
I
D
= 20 A
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
100
0
0.5
0.2
– 0.1
– 0.4
– 0.7
– 1.0
I
D
= 5 mA
I
D
= 250 μA
0.001
0.01
0.1
1
10
– 50
– 25
0
25
50
75
100 125 150
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
I
DM
Limited
I
D
Limited
100
100 μ
s
1 m
s
10
1
10 m
s
Limited by R
D
S
(on)
*
100 m
s
0.1
0.01
1
s
10
s
T
A
= 25 °C
S
ingle Pul
s
e
DC
BVD
SS
Limited
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiJ478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
60
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
Current Derating*
2.5
2.0
1.5
1.0
0.5
75
60
45
30
15
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiJ478DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
0.1
P
DM
t
1
0.05
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 70 °C/W
thJA
0.02
(t)
3. T
– T
= P
JM
Z
A
DM thJA
S
ingle Pul
s
e
4.
S
urface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
SO-8L Case Outline
for Non-Al Parts
b2
D2
A1
b1
e
θ
b3
b4
b
D1
D
0.25 gauge line
T
o
p
s
ide view
Back
s
ide view (
s
ingle)
K
D3
D3
D2
b3
b4
Back
s
ide view (dual)
Revision: 16-May-16
Document Number: 69003
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
MILLIMETERS
NOM.
1.07
–
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
–
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
3.28
–
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.129
–
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
3.18
–
6.25
4.47
3.38
0.15
0.82
1.22
0.238
0.168
0.125
–
0.246
0.176
0.133
0.006
0.032
0.048
E1
E2
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
–
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
–
L1
K
W
W1
W2
W3
0°
10°
0°
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
•
Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK
®
SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pad
s
Dimen
s
ion
s
in mm (inche
s
)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
