Vishay-Intertech-SIRA14BDP-T1-GE3
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SiRA14BDP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
PowerPAK
®
S
O-8
S
ingle
D
D
7
8
D
6
• 100 % R
g
and UIS tested
D
5
• Material categorization:
for definitions of compliance please see
1
2
S
S
D
APPLICATIONS
3
4
G
S
1
• High power density DC/DC
• Synchronous rectification
Top View
Bottom View
PRODUCT SUMMARY
V
DS
(V)
• VRMs and embedded DC/DC
G
30
0.00538
0.00702
6.6
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
R
S
Q
g
typ. (nC)
D
(A)
a
Configuration
N-Channel MOSFET
I
64
Single
ORDERING INFORMATION
Package
PowerPAK SO-8
Lead (Pb)-free and halogen-free
SiRA14BDP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
30
UNIT
V
DS
V
V
GS
+20, -16
64
T
C
= 25 °C
C
= 70 °C
T
52
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
21
b, c
16
b, c
130
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
33
3.3
b, c
15
Continuous source-drain diode current
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
11.3
36
23
mJ
W
T
C
= 70 °C
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
3.7
b, c
2.4
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SMYBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient
b, f
t
10 s
Steady state
28
34
°C/W
Maximum junction-to-case (drain)
R
thJC
2.7
3.5
Notes
a. Based
on T
C
= 25 °C
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a re
sult of the singulation proces
s in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 72 °C/W
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiRA14BDP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Drain-source breakdown voltage
(c)
(transient)
V
DS
V
GS
= 0 V, I
D
= 250 μA
30
36
–
–
–
–
V
V
GS
= 0 V, I
D(aval)
= 40 A,
V
DSt
t
transcient
50 ns
V
DS
temperature coefficient
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
–
–
15.2
–
–
I
D
= 250 μA
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
-4.7
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20, -16 V
V
DS
= 30 V, V
GS
= 0 V
1.1
–
–
–
–
–
–
2.2
100
1
V
I
GSS
nA
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
–
10
–
30
–
V
GS
= 10 V, I
D
= 10 A
0.00370 0.00538
0.00540 0.00702
Drain-source on-state resistance
a
S
V
GS
= 4.5 V, I
D
= 8 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 10 V, I
D
= 20 A
–
65
–
Input capacitance
C
iss
C
oss
C
rss
–
–
917
389
37
–
–
Output capacitance
Reverse transfer capacitance
pF
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
–
–
C
rss
/C
iss
ratio
–
0.04
14
0.08
22
10
–
–
Total gate charge
Q
g
–
6.6
2.93
1.61
11
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
–
nC
–
–
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
–
–
0.6
–
2.8
10
5.6
20
10
30
10
30
60
35
20
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
5
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Turn-off delay time
Fall time
–
16
–
5
ns
Turn-on delay time
Rise time
–
15
–
30
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
Fall time
–
17
–
10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 10 A
–
–
–
–
–
–
–
–
–
33
130
1.1
40
20
–
A
0.77
20
7
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
10
10
ns
Reverse recovery rise time
t
b
–
Notes
a. Pulse
test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
c. Based
on characterization, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiRA14BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
80
60
40
20
0
10000
1000
100
120
100
80
60
40
20
0
10000
1000
100
V
GS
= 10 V thru 4 V
T
C
= 25 °C
T
C
= 125 °C
V
GS
= 3 V
T
C
= -55 °C
10
10
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.010
0.008
0.006
0.004
0.002
0
10000
1000
100
1500
1200
900
600
300
0
10000
1000
100
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
10
10
20
40
60
80
100
120
0
5
10
15
20
25
30
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
Axis Title
Axis Title
10
8
10000
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
I
D
= 10 A
I
D
= 10 A
V
DS
= 15 V
V
GS
= 10 V
1000
100
10
6
V
DS
= 10 V
V
GS
= 4.5 V
4
V
DS
= 20 V
2
0
10
3
6
9
12
15
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiRA14BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
I
D
= 10 A
100
10
1
10000
1000
100
0.03
0.025
0.02
0.015
0.01
0.005
0
10000
1000
T
J
= 150 °C
T
J
= 25 °C
100
T
J
= 125 °C
T
J
= 25 °C
0.1
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Volta
g
e
On-Resistance vs. Gate-to-Source Volta
g
e
Axis Title
Axis Title
2.0
10000
200
150
100
50
10000
1.8
1.6
1.4
1.2
1.0
0.8
1000
100
10
1000
100
10
I
D
= 250 μA
0
-50 -25
0
25
50
75 100
125 150
0.0001 0.001
0.01 0.1
1
10
100 1000
T
J
– Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
1000
100
10
10000
(1)
Limited by R
DS(on)
I
DM
Limited
I
D(ON)
Limited
1000
100 μs
1 ms
1
10 ms
100 ms
100
1 s
10 s
DC
0.1
0.01
T
A
= 25 °C
BV
dss
Limited
Single pulse
10
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operatin
g
Area
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiRA14BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
90
75
60
45
30
15
0
50
40
30
20
10
0
10000
1000
100
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Power, Junction-to-Case
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiRA14BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
Notes
0.2
0.1
P
DM
0.1
t
1
0.05
t
2
t
1
t
2
1. Duty cycle, D =
0.02
2. Per unit base = R
thJA
= 72 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
4. Surface mounted
Single pulse
0.01
10
1000
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S18-0993-Rev. A, 01-Oct-2018
Document Number: 76789
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3.
Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
A1
b
0.97
–
–
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
D2
D3
D4
D5
E
4.90
0.193
3.76
0.148
1.50
0.059
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
6.05
5.79
3.48
3.68
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.246
0.236
0.151
0.154
E1
E2
E3
E4
e
5.89
0.232
3.66
0.144
3.78
0.149
0.75 typ.
1.27 BSC
1.27 typ.
–
0.030 typ.
0.050 BSC
0.050 typ.
–
K
K1
H
0.56
0.51
0.51
0.06
0°
–
0.022
0.020
0.020
0.002
0°
–
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
–
–
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM
P
A
DS FOR Power
P
A
K
®
SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
15
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
