Vishay-Intertech-SIS110DN-T1-GE3
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SiS110DN
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PowerPAK
®
1212-8
S
ingle
• TrenchFET
®
Gen IV power MOSFET
• Tuned for the lowest R
DS
– Q
oss
FOM
• 100 % R
g
and UIS tested
D
D
7
8
D
6
D
5
• Material categorization:
for definitions of compliance please see
1
S
2
S
3
S
4
G
1
APPLICATIONS
• Primary side switch
• DC/DC converter
D
Top View
Bottom View
PRODUCT SUMMARY
V
DS
(V)
100
0.054
0.070
6.5
• Motor drive switch
G
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 7.5 V
• Boost converter
• LED backlighting
R
Q
g
typ. (nC)
I
D
(A)
14.2
g
S
N-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
PowerPAK 1212-8
SiS110DN-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
100
20
UNIT
V
DS
V
GS
V
T
C
= 25 °C
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
14.2
T
11.4
Continuous drain current (T
J
= 150 °C)
I
D
5.2
b, c
4.2
b, c
20
16
a
2.6
b, c
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
10
5
24
mJ
W
T
C
= 70 °C
15
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
3.2
b, c
2.1
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, f
SYMBOL
R
thJA
TYPICAL
31
MAXIMUM
UNIT
t
10 s
Steady state
39
°C/W
Maximum junction-to-case (drain)
Notes
R
thJC
4.2
5.2
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 81 °C/W
g. T
C
= 25 °C
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS110DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
100
–
–
V
V
DS
temperature coefficient
–
–
57
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
I
D
= 250 μA
-7.2
–
V
DS
= V
GS
, I
D
= 250 μA
2
–
–
4
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
nA
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
= 10 V
–
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
10
10
–
–
–
V
GS
= 10 V, I
D
= 4 A
0.045
0.050
25
0.054
0.070
–
Drain-source on-state resistance
a
S
V
GS
= 7.5 V, I
D
= 4 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 10 A
–
Input capacitance
C
iss
C
oss
C
rss
–
–
550
50
7
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 4 A
pF
–
–
–
8.5
6.5
2.5
1.5
8
13
10
–
Total gate charge
Q
g
–
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 4 A
–
nC
–
–
Output charge
V
DS
= 50 V, V
GS
= 0 V
f = 1 MHz
–
–
Gate resistance
0.3
–
1.3
10
5
2.6
20
10
30
10
20
10
30
10
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
–
V
DD
= 50 V, R
L
= 12.5
, I
D
4 A,
GEN
= 10 V, R
g
= 1
V
Turn-off delay time
–
14
5
Fall time
–
ns
Turn-on delay time
–
11
5
Rise time
–
V
DD
= 50 V, R
L
= 12.5
, I
D
4 A,
V
GEN
= 7.5 V, R
g
= 1
Turn-off delay time
–
14
5
Fall time
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
16
20
1.2
100
110
–
A
I
S
= 4 A, V
GS
= 0 V
0.85
50
53
27
23
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 4 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS110DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
20
15
10
5
10000
1000
100
20
16
12
8
10000
1000
100
V
GS
= 10 V thru 6 V
V
GS
= 5 V
T
C
= 25 °C
4
T
C
= 125 °C
3
V
GS
= 4 V
2.5
T
C
= -55 °C
10
0
10
0
0
0.5
1
1.5
2
3
0
1
2
4
5
6
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
C
iss
0.07
0.06
0.05
0.04
0.03
10000
1000
100
700
600
500
400
300
200
100
0
10000
1000
100
V
GS
= 7.5 V
V
GS
= 10 V
C
rss
C
oss
10
10
0
4
8
12
16
20
0
20
40
60
80
100
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Volta
g
e
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10000
1000
100
I
D
= 4 A
I
D
= 4 A
V
DS
= 50 V
V
GS
= 7.5 V
V
DS
= 75 V
6
V
GS
= 10 V
V
DS
= 25 V
4
2
0
10
10
0
2
4
6
8
10
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS110DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
1
10000
1000
100
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
10000
1000
100
T
J
= 150 °C
I
D
= 250μA
T
J
= 25 °C
0.1
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
Source-Drain Diode Forward Volta
g
e
Threshold Volta
g
e
Axis Title
Axis Title
0.2
0.15
0.1
10000
1000
100
50
40
30
20
10
0
10000
1000
100
I
D
= 4 A
T
J
= 125 °C
0.05
0
T
J
= 25 °C
10
10
1000
0
2
4
6
8
10
0.001 0.01
0.1
1
10
100
V
GS
– Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
100
10000
(1)
I
DM
Limited
Limited by R
DS(on)
I
D(ON)
Limited
10
1
1000
100
10
100 μs
1 ms
10 ms
100 ms
0.1
0.01
1s
T
A
= 25 °C
10 s
BV
dss
Limited
Single pulse
DC
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operatin
g
Area, Junction-to-Ambient
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS110DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
16
12
8
10000
1000
100
30
25
20
15
10
5
10000
1000
100
4
0
10
0
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Power, Junction-to-Case
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS110DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
t
2
1. Duty cycle, D =
t
1
t
2
2. Per unit base = R
thJA
= 81 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
0.02
4. Surface mounted
Single pulse
0.01
0.0001
10
1000
0.001
0.01
0.1
1
10 100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S18-0018-Rev. A, 15-Jan-18
Document Number: 75888
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
1212-8, (Single / Dual)
L
H
E2
E4
K
W
8
5
1
4
1
2
3
4
Z
2
L1
E3
Back
s
ide view of
s
ingle pad
A1
L
H
K
E2
E4
H
2
E1
E
1
2
3
4
Detail Z
D1
D2
Notes
1. Inch will govern
2 Dimen
s
ion
s
exclu
s
ive of mold gate burr
s
3.
Dimen
s
ion
s
exclu
s
ive of mold fla
s
h and cutting burr
s
E3
Back
s
ide view of dual pad
MILLIMETERS
INCHES
NOM.
0.041
–
DIM.
MIN.
0.97
0.00
0.23
0.23
3.20
2.95
1.98
0.48
NOM.
1.04
MAX.
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
MIN.
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
A
A1
b
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
–
0.30
0.012
0.011
0.130
0.120
0.083
–
c
0.28
D
3.30
D1
D2
D3
D4
D5
E
3.05
2.11
–
0.47 typ.
2.3 typ.
3.30
0.0185 typ
0.090 typ
0.130
0.120
0.063
0.073
0.013 typ.
0.026 BSC
0.034 typ.
–
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
1.60
1.85
0.034 typ.
0.65 BSC
0.86 typ.
–
K
K1
H
0.35
0.30
0.30
0.06
0°
–
0.014
0.012
0.012
0.002
0°
–
0.41
0.51
0.56
0.20
12°
0.016
0.017
0.005
–
0.020
0.022
0.008
12°
L
0.43
L1
0.13
–
W
M
0.15
0.25
0.36
0.006
0.010
0.005 typ.
0.014
0.125 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM
P
A
DS FOR Power
P
A
K
®
1212-8 Single
0.152
(3.860)
0.039
0.068
0.010
(0.255)
(0.990)
(1.725)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72597
Revision: 21-Jan-08
7
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
Document Number: 91000
1
