Vishay-Intertech-SIS415DNT-T1-GE3
| Part # | Vishay-Intertech-SIS415DNT-T1-GE3 |
Download  | Vishay-Intertech-SIS415DNT-T1-GE3 |
SiS415DNT
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen III P-channel power MOSFET
PowerPAK
®
1212-8
S
D
8
D
7
D
6
• Thin 0.8 mm maximum height
D
5
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
1
S
2
S
3
S
4
G
APPLICATIONS
1
S
• Smart phones, tablet PCs, and
Top View
Bottom View
mobile computing
– Battery switch
– Load switch
– Power management
PRODUCT SUMMARY
V
DS
(V)
G
-20
R
R
DS(on)
max. (
) at V
GS
= -10 V
DS(on)
max. (
) at V
GS
= -4.5 V
0.0040
0.0055
0.0095
55.5
R
DS(on)
max. (
) at V
GS
= -2.5 V
Q
g
typ. (nC)
D
I
D
(A)
-35
a
P-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8S
SiS415DNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
-20
12
UNIT
V
DS
V
GS
V
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
-35
a
-35
a
-22.6
b, c
-18.2
b, c
-80
-35
a
-3.3
b, c
-20
Continuous drain current (T
J
= 150 °C)
I
D
A
Pulsed drain current (t = 300 μs)
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
Avalanche current
Single pulse avalanche energy
I
AS
E
AS
L = 0.1 mH
20
mJ
T
T
C
= 25 °C
C
= 70 °C
52
33
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
3.7
b, c
2.4
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, f
Maximum junction-to-case (drain)
SYMBOL
R
thJA
R
thJC
TYPICAL
MAXIMUM
UNIT
t
10 s
Steady state
26
1.9
33
2.4
°C/W
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 81 °C/W
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS415DNT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
-20
–
–
V
V
DS
temperature coefficient
–
-14
–
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
3.1
V
DS
= V
GS
, I
D
= -250 μA
-0.4
–
-1.5
100
-1
V
I
GSS
V
DS
= 0 V, V
GS
=
12 V
–
–
–
nA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -10 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
μA
A
–
-10
–
I
D(on)
-30
–
–
V
GS
= -10 V, I
D
= -20 A
0.0033
0.0044
0.0076
70
0.0040
0.0055
0.0095
–
Drain-source on-state resistance
a
R
DS(on)
g
fs
V
GS
= -4.5 V, I
D
= -15 A
GS
= -2.5 V, I
D
= -10 A
–
V
–
Forward transconductance
a
Dynamic
b
V
DS
= -10 V, I
D
= -20 A
–
S
Input capacitance
C
iss
C
oss
C
rss
–
–
5460
645
642
117
55.5
7.9
12.7
2.2
37
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -10 A
f = 1 MHz
pF
–
–
–
180
85
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
–
–
–
0.4
–
4
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
70
70
150
50
25
25
150
25
–
38
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
Fall time
–
82
–
25
ns
Turn-on delay time
Rise time
–
14
–
13
V
DD
= -10 V, R
L
= 1
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
Turn-off delay time
Fall time
–
83
–
14
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
-35
-80
-1.1
50
24
–
A
Body diode voltage
I
S
= -4 A, V
GS
= 0 V
-0.72
25
12
11
14
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Q
rr
t
a
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
Reverse recovery rise time
t
b
–
Notes
a. Pulse
test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS415DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
80
64
48
32
16
0
V
GS
= 10 V thru 3 V
64
48
32
16
0
T
C
= 25
°
C
V
GS
= 2 V
T
C
= 125
°
C
V
GS
= 1 V
2.0
T
C
= -55 °C
2.4 3.2
0.0
0.8
1.6
4.0
0.0
0.5
1.0
1.5
2.5
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.0200
0.0160
0.0120
0.0080
0.0040
0.0000
8000
6400
4800
3200
1600
0
C
i
ss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
o
ss
V
GS
= 10 V
64
C
r
ss
0
16
32
48
80
0
4
8
12
16
20
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 10 V
I
D
= 10 A
I
D
= 20 A
8
V
D
S
= 10 V
6
V
D
S
= 5 V
V
GS
= 2.5 V
V
D
S
= 15 V
4
2
0
-50
-25
0
25
50
75
100
125
150
0
25
50
75
100
125
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS415DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.020
100
10
I
D
= 20 A
0.016
0.012
0.008
0.004
0.000
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-0.4
-0.6
-0.8
-1.0
-1.2
100
80
60
40
20
0
I
D
= 250 μA
I
D
= 1 mA
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (
°
C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
limited
100 μ
s
10 I
D
limited
1 m
s
10 m
s
1
(1)
Limited by R
D
S
(on)
100 m
s
1
s
0.1
10
s
DC
T
A
= 25
°
C
S
ingle pul
s
e
BVD
SS
limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS415DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
60
Limited by package
40
20
0
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
Current Derating
a
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Ca
s
e Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiS415DNT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty cycle, D =
0.02
2. Per unit base = R
= 81 °C/W
thJA
(t)
Z
3. T
– T
= P
JM
A
DM thJA
S
ingle pul
s
e
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
0.2
0.1
0.05
0.02
0.1
S
ingle pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S17-1449-Rev. B, 18-Sep-17
Document Number: 63684
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
1212-8T
MILLIMETERS
NOM.
INCHES
DIM.
A
MIN.
0.70
0.00
0.23
0.23
3.20
2.95
1.98
0.48
MAX.
0.80
0.05
0.41
0.33
3.40
3.15
2.24
0.89
MIN.
0.028
0.000
0.009
0.009
0.126
0.116
0.078
0.019
NOM.
0.030
MAX.
0.031
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.75
–
A1
b
–
0.30
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D3
D4
D5
E
3.05
0.120
2.11
0.083
–
–
0.47 TYP.
2.3 TYP.
3.30
0.0185 TYP.
0.090 TYP.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 TYP.
0.65 BSC
0.86 TYP.
–
0.013 TYP.
0.026 BSC
0.034 TYP.
–
K
K1
H
0.35
0.30
0.30
0.06
0°
–
0.014
0.012
0.012
0.002
0°
–
0.41
0.51
0.56
0.20
12°
0.016
0.020
0.022
0.008
12°
L
0.43
0.017
L1
0.13
0.005
–
–
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
Revison: 18-Feb-13
Document Number: 62836
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PAD Pattern
Vishay Siliconix
Recommended Minimum PADs for Thin PowerPAK
®
1212-8T
1
2
3
4
0.152
(3.86)
0.039
(0.99)
0.068
(1.73)
0.025
(0.64)
0.056
(1.42)
0.030
(0.76)
Revision: 07-Sep-2020
Document Number: 66832
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
