Vishay-Intertech-SISA24DN-T1-GE3
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SiSA24DN
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
PowerPAK
®
1212-8
S
ingle
D
D
7
8
D
6
• Optimized Q
g
, Q
gd
, and Q
gd
/Q
gs
ratio reduces
switching related power loss
D
5
• 100 % R
g
and UIS tested
• Material
categorization: for definitions of
1
2
S
S
3
S
APPLICATIONS
D
4
1
G
• Synchronous rectification
• High power density DC/DC
Top View
Bottom View
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. (
) at V
GS
= 10 V
• Synchronous buck converter
G
25
• Load switching
0.00140
0.00240
17.2
R
DS(on)
max. (
) at V
GS
= 4.5 V
S
Q
g
typ. (nC)
I
D
(A)
60
a, g
N-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8 Single
SiSA24DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
25
+20 / -16
60
a
60
a
38.3
b, c
30.8
b, c
150
47.2
3.3
b, c
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous drain current (T
J
= 150 °C)
I
D
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
30
45
52
33
L = 0.1 mH
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Maximum power dissipation
P
D
3.7
b, c
2.4
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
SYMBOL
R
thJA
R
thJF
TYPICAL
24
MAXIMUM
UNIT
t
10 s
Steady state
33
2.4
°C/W
Maximum junction-to-case (drain)
1.9
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 81 °C/W.
g. T
C
= 25 °C.
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSA24DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
25
–
–
–
–
V
V
DS
temperature coefficient
21
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
I
D
= 250 μA
–
-4.8
–
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 / -16 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
1
–
–
–
–
–
–
2.1
100
1
V
I
GSS
nA
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
15
–
40
–
0.00115 0.00140
0.00195 0.00240
Drain-source on-state resistance
a
S
V
GS
= 4.5 V, I
D
= 10 A
–
Forward transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 15 A
–
75
–
Input capacitance
C
iss
C
oss
C
rss
–
–
2650
1015
197
36.5
17.2
7.4
3.3
0.75
12
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 15 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 15 A
f = 1 MHz
pF
–
–
–
55
26
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
–
–
Gate resistance
0.2
–
1.35
24
46
36
20
36
84
34
34
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
–
23
V
DD
= 10 V, R
L
= 1
, I
D
15 A,
V
GEN
= 10 V, R
g
= 1
Turn-off delay time
–
18
Fall time
–
10
ns
Turn-on delay time
–
18
Rise time
–
42
V
DD
= 10 V, R
L
= 1
, I
D
15 A,
V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
–
17
Fall time
–
17
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
56.8
150
1.1
64
40
–
A
I
S
= 5 A, V
GS
= 0 V
0.73
32
20
17
15
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSA24DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
150
120
90
60
30
0
10000
1000
100
150
120
90
60
30
0
10000
1000
100
V
GS
= 10 V thru 4 V
T
C
= 25 °C
V
GS
= 3 V
T
C
= 125 °C
T
C
= -55 °C
V
GS
= 2 V
10
10
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.0030
0.0024
0.0018
0.0012
0.0006
0
10000
1000
100
3200
2560
1920
1280
640
10000
1000
100
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
10
0
10
0
20
40
60
80
100
0
5
10
15
20
25
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Volta
g
e
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.7
1.5
1.3
1.1
0.9
0.7
10000
1000
100
I
D
= 15 A
I
D
= 10 A
V
GS
= 10 V
6
V
GS
= 4.5 V
4
V
DS
= 5 V, 10 V, 15 V
2
0
10
10
0
8
16
24
32
40
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSA24DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.4
0.2
0
10000
T
J
= 150 °C
1000
1
T
J
= 25 °C
I
D
= 5 mA
-0.2
-0.4
-0.6
-0.8
0.1
100
I
D
= 250 μA
0.01
0.001
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
Source-Drain Diode Forward Volta
g
e
Threshold Volta
g
e
Axis Title
Axis Title
0.010
0.008
0.006
0.004
0.002
0
10000
1000
100
150
120
90
60
30
0
10000
1000
100
I
D
= 15 A
T
J
= 125 °C
T
J
= 25 °C
10
10
0
2
4
6
8
10
0.001
0.01
0.1
1
10
V
GS
– Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
I
DM
limited
100
10
I
D
limited
100 μs
1000
(1)
1 ms
10 ms
Limited by R
DS(on)
1
100 ms
100
1 s
10 s
DC
0.1
T
C
= 25 °C
Single pulse
BVDSS limited
0.01
10
0.01
0.1
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
1
10
100
(1)
V
GS
Safe Operatin
g
Area, Junction-to-Ambient
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSA24DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
175
10000
1000
100
140
105
Package limited
70
35
0
10
0
35
70
105
140
175
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Axis Title
Axis Title
65
52
39
26
13
0
10000
2.0
1.6
1.2
0.8
0.4
0
10000
1000
100
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
A
– Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSA24DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
1. Duty cycle, D =
t
1
t
2
0.02
2. Per unit base = R
thJA
= 81 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
Single pulse
4. Surface mounted
0.01
0.0001
10
1000
0.001
0.01
0.1
1
10 100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.1
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S16-2063-Rev. A, 10-Oct-16
Document Number: 75465
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
