Vishay-Intertech-SISS63DN-T1-GE3
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SiSS63DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen III p-channel power MOSFET
PowerPAK
®
1212-8
S
D
8
D
7
D
6
• Leadership
R
DS(on)
in compact and thermally
enhanced package
D
5
• 100 % R
g
and UIS tested
• Material
categorization: for definitions of
1
S
2
S
3
S
S
APPLICATIONS
4
G
1
• Battery management
Top View
Bottom View
• Load switch
G
PRODUCT SUMMARY
V
DS
(V)
-20
R
DS(on)
max. (
Ω
) at V
GS
= -10 V
R
DS(on)
max. (
Ω
) at V
GS
= -4.5 V
0.0027
0.0036
0.0070
72.2
-127.5
Single
D
R
DS(on)
max. (
Ω
) at V
GS
= -2.5 V
Q
g
typ. (nC)
D
(A)
Configuration
P-Channel MOSFET
I
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8S
SiSS63DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
-20
12
UNIT
V
DS
V
GS
V
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
-127.5
-102
Continuous drain current (T
J
= 150 °C)
I
D
-35.1
b, c
-28.1
-200
-54.8
-4.2
b, c
-25
31.2
65.8
42.1
5
b, c
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
mJ
W
T
C
= 70 °C
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
3.2
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
R
thJC
TYPICAL
20
MAXIMUM
UNIT
Maximum junction-to-ambient
b
t
≤
10 s
Steady state
25
1.9
°C/W
Maximum junction-to-case (drain)
1.5
Notes
a. T
C
= 25 °C
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum
under steady state conditions is 65 °C/W
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSS63DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -10 mA
-20
–
–
V
V
DS
temperature coefficient
–
-15
–
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
I
D
= -250 μA
–
4
V
DS
= V
GS
, I
D
= -250 μA
-0.5
–
-1.5
100
-1
V
I
GSS
V
DS
= 0 V, V
GS
=
12 V
–
–
–
nA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
-10 V, V
GS
= -10 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
μA
A
–
-15
–
I
D(on)
-20
–
–
V
GS
= -10 V, I
D
= -15 A
0.0022
0.0030
0.0053
75
0.0027
0.0036
0.0070
–
Drain-source on-state resistance
a
R
DS(on)
g
fs
V
GS
= -4.5 V, I
D
= -10 A
GS
= -2.5 V, I
D
= -5 A
–
Ω
V
–
Forward transconductance
a
Dynamic
b
V
DS
= -10 V, I
D
= -15 A
–
S
Input capacitance
C
iss
C
oss
C
rss
–
–
7080
1000
1110
157.2
72.2
17.7
22
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -35.1 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -35.1 A
f = 1 MHz
pF
–
–
–
236
110
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
–
–
Gate resistance
0.3
–
1.5
3
Ω
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
20
40
56
160
50
80
120
200
140
Rise time
–
28
V
DD
= -10 V, R
L
= 0.36
Ω
, I
D
≅
-28.1 A,
V
GEN
= -10 V, R
g
= 1
Ω
Turn-off delay time
–
80
Fall time
–
25
ns
Turn-on delay time
–
40
Rise time
–
60
V
DD
= -10 V, R
L
= 0.36
Ω
, I
D
≅
-28.1 A,
V
GEN
= -4.5 V, R
g
= 1
Ω
Turn-off delay time
–
100
70
Fall time
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
-54.8
-200
-1.2
40
A
I
S
= -5 A, V
GS
= 0 V
-0.66
20
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
9.5
11.5
8.5
19
I
F
= -28.1 A, di/dt = 100 A/μs,
T
J
= 25 °C
–
ns
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSS63DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
150
120
90
60
30
0
10000
1000
100
10 000
1000
100
10000
C
iss
V
GS
= 10 V thru 3 V
C
oss
1000
C
rss
V
GS
= 2 V
100
10
10
10
0
5
10
15
20
0
1.0
2.0
3.0
4.0
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10
8
10000
1000
100
100
80
60
40
20
0
10000
1000
100
I
D
= 35.1 A
T
C
= -55 °C
6
T
C
= 125 °C
4
V
DS
= 5 V, 10 V, 16 V
T
C
= 25 °C
2
0
10
10
0
40
80
120
160
0
0.5
1.0
1.5
2.0
2.5
3.0
Q
g
– Total Gate Charge (nC)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
0.010
0.008
0.006
0.004
0.002
0
10000
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
V
GS
= 10 V, 15 A
V
GS
= 2.5 V
V
GS
= 4.5 V, 10 A
V
GS
= 2.5 V, 5 A
V
GS
= 4.5 V
V
GS
= 10 V
10
10
-50 -25
0
25
50
75 100
125 150
0
25
50
75
100
T
J
– Junction Temperature (°C)
I
D
– Drain Current (A)
Gate Charge
On-Resistance vs. Junction Temperature
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSS63DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
1.1
0.9
0.7
0.5
0.3
10000
100
10
10000
1000
100
I
D
= 250 µA
T
J
= 150 °C
1000
100
T
J
= 25 °C
1
0.1
0.01
10
10
0
0.2
0.4
0.6
0.8
1.0
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
T
J
– Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
I
D
= 15 A
Axis Title
0.010
0.008
0.006
0.004
0.002
0
10000
1000
100
140
105
70
10000
1000
100
T
J
= 125 °C
T
J
= 25 °C
35
0
10
10
0
25
50
75
100
125
150
0
2
4
6
8
10
T
C
– Case Temperature (°C)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
I
DM
limited
100
10
100 µs
1000
100
1 ms
a
Limited by R
DS(on)
10 ms
100 ms
1
0.1
10s, 1s
DC
0.01
T
A
= 25 °C,
single pulse
BVDSS limited
0.001
10
1000
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSS63DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
500
10000
1000
100
400
300
200
100
0
10
0.0001 0.001
0.01
0.1
1
10
t – Time (s)
Current Derating
a
Axis Title
Axis Title
2.5
2.0
1.5
1.0
0.5
0
10000
1000
100
80
10000
1000
100
64
48
32
16
0
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (°C)
T
C
– Case Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Power, Junction-to-Case
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiSS63DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
Duty cycle = 0.5
0.2
Notes
P
DM
0.1
0.1
t
1
0.05
0.02
t
2
1. Duty cycle, D =
100
t
1
t
2
2. Per unit base = R
thJA
= 65 °C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
Single pulse
4. Surface mounted
0.01
0.0001
10
1000
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S22-0439-Rev. B, 16-May-2022
Document Number: 71591
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
Case Outline for PowerPAK
®
1212-8S
A
D
Z
D1
0.10 C
8
7
6
5
5
6
7
8
2 x
K1
E1
E
K
L
B
0.10
C
b
e
1
3
4
3
2
1
2
4
2 x
0.10
M
0.05
C A B
C
Pin 1 dot
M
0.10
0.08
C
C
A
A3
C
A1
MILLIMETERS
NOM.
INCHES
NOM.
DIM.
MIN.
0.67
0.00
MAX.
MIN.
MAX.
0.033
0.002
A
A1
A3
b
0.75
0.83
0.05
0.026
0.000
0.030
–
–
0.20 ref.
0.30
0.008 ref
0.012
0.25
3.20
2.15
3.20
1.60
0.35
3.40
2.35
3.40
1.80
0.010
0.126
0.085
0.126
0.063
0.014
0.134
0.093
0.134
0.071
D
3.30
0.130
D1
E
2.25
0.089
3.30
0.130
E1
e
1.70
0.067
0.65 bsc.
0.76 ref.
0.41 ref.
0.43
0.026 bsc.
0.030 ref.
0.016 ref.
0.017
K
K1
L
0.33
0.53
0.013
0.021
Z
0.525 ref.
0.021 ref.
ECN: C20-0862-Rev. B, 20-Jul-2020
DWG: 6008
Revision: 20-Jul-2020
Document Number: 63919
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM
P
A
DS FOR Power
P
A
K
®
1212-8 Single
0.152
(3.860)
0.039
0.068
0.010
(0.255)
(0.990)
(1.725)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72597
Revision: 21-Jan-08
7
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
Document Number: 91000
1
