Vishay-Intertech-SIUD402ED-T1-GE3
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SiUD402ED
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PowerPAK
®
0806
S
in
g
le
D
• Ultra small 0.8 mm x 0.6 mm outline
• Ultra thin 0.4 mm max. height
• 100 % R
g
tested
3
• Typical ESD protection 2000 V (HBM)
• Material
categorization: for definitions of compliance
1
G
2
S
Top View
APPLICATIONS
D
Bottom View
Marking Code:
C
• Load switch
• High speed switching
PRODUCT SUMMARY
V
DS
(V)
• DC/DC converters
20
0.73
0.87
1.10
1.80
0.5
G
R
R
DS(on)
max. (
) at V
GS
= 4.5 V
DS(on)
max. (
) at V
GS
= 2.5 V
• For smart phones, tablet PCs and
mobile computing
R
DS(on)
max. (
) at V
GS
= 1.8 V
DS(on)
max. (
) at V
GS
= 1.5 V
• Small signal switching
R
Q
g
typ. (nC)
I
D
(A)
a
S
1
N-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
PowerPAK 0806
Lead (Pb)-free and halogen-free
SiUD402ED-T1-GE3
Note
The lead finish is NiPdAu and classed as E4 finish
•
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source voltage
Gate-source voltage
V
DS
V
GS
20
8
V
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
1
a
0.8
a
Continuous drain current (T
J
= 150 °C)
I
D
0.35
b
0.28
b
1.4
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
1
a
Continuous source-drain diode current
0.37
b
1.25
a
0.8
a
Maximum power dissipation
P
D
W
0.37
b
0.24
b
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum junction-to-ambient
a, d
Maximum junction-to-ambient
b, e
Symbol
R
thJA
Typical
Maximum
Unit
80
265
100
335
t
5 s
°C/W
Notes
a. Surface
mounted on 1″ x 1″ FR4 board with full copper, t = 5 s
b. Surface
mounted on 1″ x 1″ FR4 board with minimum copper, t = 5 s
c. Refer
to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering
d. Maximum
under steady state conditions is 135 °C/W
e. Maximum
under steady state conditions is 400 °C/W
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiUD402ED
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-source breakdown voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
20
–
–
18
-1.9
–
–
–
V
mV/°C
V
V
DS
temperature coefficient
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS(th)
temperature coefficient
Gate-source threshold voltage
–
–
V
DS
= V
GS
, I
D
= 250 μA
0.4
–
0.9
0.5
10
1
V
DS
= 0 V, V
GS
=
4.5 V
8 V
–
Gate-source leakage
I
GSS
V
DS
= 0 V, V
GS
=
–
–
μA
A
V
DS
= 20 V, V
GS
= 0 V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
V
–
–
10
–
I
D(on)
1
–
–
V
GS
= 4.5 V, I
D
= 0.2 A
0.57
0.67
0.80
0.90
1.2
0.73
0.87
1.10
1.80
–
V
GS
= 2.5 V, I
D
= 0.1 A
–
Drain-source on-state resistance
a
R
DS(on)
S
V
GS
= 1.8 V, I
D
= 0.02 A
GS
= 1.5 V, I
D
= 0.01 A
–
V
–
Forward transconductance
a
Dynamic
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A
–
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
3
–
–
–
–
–
–
–
–
16
7.5
3.5
0.75
0.50
0.09
0.09
24
7
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
pF
–
V
DS
= 10 V, V
GS
= 8 V, I
D
= 0.2 A
1.20
0.75
–
Total gate charge
Q
g
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.2 A
f = 1 MHz
–
Gate resistance
50
15
20
50
15
10
10
25
10
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise time
10
23
7
V
DD
= 10 V, R
L
= 50
I
D
0.2 A, V
GEN
= 4.5 V, Rg = 1
Turn-off delay time
Fall time
ns
Turn-on delay time
5
Rise time
5
V
DD
= 10 V, R
L
= 15
I
D
0.2 A, V
GEN
= 8 V, R
g
= 1
Turn-off delay time
11
5
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
1
c
1.4
1.2
25
7
A
–
I
S
= 0.2 A, V
GS
= 0 V
0.8
11
3.5
5.3
5.7
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 0.2 A, dI/dt = 100 A/μs, T
J
= 25 °C
–
ns
t
b
–
Note
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
c. Surface
mounted on 1″ x 1″ FR4 board with full copper, t = 5 s
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiUD402ED
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
1.2
1.0
0.8
T
J
= 150
°
C
T
J
= 25
°
C
0.6
0.4
0.2
0
T
J
= 25
°
C
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
GS
–
G
ate-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V
GS
= 5 V thru 2.5 V
V
GS
= 2 V
V
GS
= 1.5 V
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 1 V
T
C
=
–
5
5
°
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0
25
20
15
10
5
V
GS
= 1.5 V
V
GS
= 1.8 V
C
i
ss
V
GS
= 2.5 V
C
o
ss
V
GS
= 4.5 V
C
r
ss
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
4
8
12
16
20
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance vs. Drain-to-Source Voltage
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiUD402ED
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
10
1
I
D
= 0.2 A
V
D
S
= 5 V
6
T
J
= 150
°
C
V
D
S
= 10 V
4
2
T
J
= 25
°
C
V
D
S
= 16 V
0.1
0.01
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.2
0.4
0.6
0.8
V
S
D
–
S
ource-to-Drain Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
Source-Drain Diode Forward Voltage
0.6
0.5
0.4
0.3
0.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 4.5 V, I
D
= 0.2 A
V
GS
= 2.5 V, I
D
= 0.2 A
V
GS
= 1.8 V, 1.5 V,
I
D
= 250 μA
I
D
= 0.02 A
– 50
– 25
0
25
50
75
100 125 150
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (
°
C)
T
J
– Temperature (
°
C)
On-Resistance vs. Junction Temperature
Threshold Voltage
2.0
I
D
= 0.2 A
1.6
1.2
0.8
0.4
0
T
J
= 125
°
C
T
J
= 25
°
C
0
1
2
3
4
5
V
GS
–
G
ate-to-
S
ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiUD402ED
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
3.0
2.0
1.0
0.0
10
R
D
S
(on)
Limited
a
IDM Limited
I
D(on)
Limited
1
100 μ
s
1 m
s
10 m
s
100 m
s
, 1
s
, 10
s
DC
0.1
T
A
= 25
°
C
BVD
SS
Limited
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
1000
V
D
S
– Drain-to-
S
ource Voltage (V)
Time (
s
)
Safe Operating Area (Junction-to-Ambient)
b
Single Pulse Power, Junction-to-Ambient
b
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0
Package Limited
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Current Derating
b, c
Power Derating
b
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
b. When
mounted on 1″ x 1″ FR4 with full copper
c. The
power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below
the package limit
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiUD402ED
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Note
s
:
P
DM
0.1
t
1
t
2
0.2
t
1
0.05
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 135 °C/W
thJA
0.02
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4.
S
urface Mounted
S
ingle Pul
s
e
0.1
0.0001
0.001
0.01
0.1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
a
1
10
100
1000
1
Duty Cycle = 0.5
0.2
Note
s
:
0.1
P
0.1
DM
0.05
t
1
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Ba
s
e = R
= 400 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
S
ingle Pul
s
e
0.001
4.
S
urface Mounted
0.01
0.0001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
a
Note
a. When
mounted on 1″ x 1″ FR4 with minimum copper
S20-0847-Rev. B, 26-Oct-2020
Document Number: 62968
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
Case Outline for PowerPAK 0.8 mm x 0.6 mm
D
C
Pin 1 Indication
E
T
o
p View
S
ide View
A
A1
L
D1
b
2
1
E1
e
3
K
Bottom View
INCHES
MILLIMETERS
DIM.
A
MIN.
0.350
0
NOM.
0.380
–
MAX.
MIN.
0.0138
0
NOM.
0.0150
–
MAX.
0.0157
0.0008
0.0071
0.0053
0.0335
0.0118
0.0256
0.0217
0.0158
0.0138
0.0118
0.400
0.020
0.180
0.135
0.850
0.300
0.650
0.550
0.400
0.350
0.300
A1
b
0.120
0.119
0.750
0.200
0.550
0.450
0.300
0.150
0.200
0.150
0.127
0.800
0.250
0.600
0.500
0.350
0.250
0.250
0.0047
0.0047
0.0295
0.0078
0.0217
0.0177
0.0118
0.0058
0.0078
0.0059
0.0050
0.0315
0.0098
0.0236
0.0197
0.0138
0.0098
0.0098
C
D
D1
E
E1
e
K
L
ECN: C13-1574-Rev. A, 23-Dec-13
DWG: 6020
Revision: 23-Dec-13
Document Number: 64254
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PAD Pattern
Vishay Siliconix
Recommended Land Pattern PowerPAK
®
0806
1
3
2
0.3
0.8
0.3
1
2
3
0.23
0.55
0.62
Revision: 25-Oct-2018
Document Number: 78035
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
