Vishay-Intertech-SIZ322DT-T1-GE3
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SiZ322DT
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
PowerPAIR
®
3
x
3
G
2
8
S
2
7
• High
side and low side MOSFETs form optimized
combination for 50 % duty cycle
S
2
6
S
2
5
• Optimized R
DS
– Q
g
and R
DS
– Q
gd
FOM elevates
efficiency for high frequency switching
S
1
/D
2
(Pin 9)
D
1
• 100 % R
g
and UIS tested
1
G
1
• Material
categorization: for definitions of compliance
2
D
1
3
D
1
1
4
D
1
D
APPLICATIONS
1
Top View
Bottom View
• Synchronous buck
• DC/DC conversion
• Half bridge
G
1
PRODUCT SUMMARY
N-Channel 1
MOSFET
• POL
MOSFET CHANNEL-1 AND CHANNEL-2
S /D
1
2
V
DS
(V)
25
0.00635
0.00900
6.2
R
DS(on)
max. (
) at V
GS
= 10 V
DS(on)
max. (
) at V
GS
= 4.5 V
R
G
2
Q
g
typ. (nC)
D
(A)
a, d
I
30
N-Channel 2
MOSFET
Configuration
Dual
S
2
ORDERING INFORMATION
Package
PowerPAIR 3 x 3
SiZ322DT-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
CHANNEL-1 AND CHANNEL-2
PARAMETER
SYMBOL
LIMIT
25
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
+16 / -12
30
a
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
30
a
Continuous drain current (T
J
= 150 °C)
I
D
19
b, c
15.2
b, c
100
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
13.9
3.1
b, c
Continuous source current (MOSFET diode conduction)
T
A
= 25 °C
Single pulse avalanche current
Single pulse avalanche energy
I
AS
15
L = 0.1 mH
E
AS
11.25
16.7
mJ
W
T
C
= 25 °C
C
= 70 °C
T
10.7
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
3.7
b, c
2.4
b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
T
J
, T
stg
°C
Notes
a. Package
limited
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. T
C
= 25 °C
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
CHANNEL-1 AND CHANNEL-2
PARAMETER
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient
a, b
Maximum junction-to-case (drain)
t
10 s
27
6
34
°C/W
Steady state
R
thJC
7.5
Notes
a. Surface
mounted on 1″ x 1″ FR4 board
b. Maximum
under steady state conditions is 69 °C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
CHANNEL-1 AND CHANNEL-2
MIN.
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
25
1
–
–
–
–
–
–
–
–
2.4
100
1
V
nA
μA
A
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 V / -12 V
V
DS
= 25 V, V
GS
= 0 V
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
–
5
40
–
–
V
GS
= 10 V, I
D
= 15 A
0.00529 0.00635
0.00750 0.00900
Drain-source on-state resistance
a
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
–
Forward transconductance
a
Dynamic
b
–
57
–
S
Input capacitance
C
iss
C
oss
C
rss
–
–
950
275
50
–
–
Output capacitance
Reverse transfer capacitance
pF
V
DS
= 12.5 V, V
GS
= 0 V, f = 1 MHz
–
–
C
rss
/C
iss
ratio
–
0.053
13.4
6.2
2.7
1.1
0.8
10
0.106
20.1
9.3
–
V
DS
= 12.5 V, V
GS
= 10 V, I
D
= 19 A
V
DS
= 12.5 V, V
GS
= 4.5 V, I
D
= 19 A
f = 1 MHz
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
–
–
–
0.2
–
1.6
20
50
30
30
30
70
40
50
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
25
V
DD
= 12.5 V, R
L
= 0.8
, I
D
15.2 A,
V
GEN
= 10 V, R
g
= 1
Turn-off delay time
Fall time
–
15
–
15
ns
Turn-on delay time
Rise time
–
15
–
45
V
DD
= 12.5 V, R
L
= 0.8
, I
D
15.2 A,
V
GEN
= 4.5 V, R
g
= 1
Turn-off delay time
Fall time
–
20
–
25
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
CHANNEL-1 AND CHANNEL-2
MIN.
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNIT
Drain-source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
I
S
I
SM
V
SD
t
rr
T
C
= 25°C
–
–
–
–
–
–
–
–
–
30
100
1.2
44
44
–
A
Body diode voltage
I
S
= 15.2 A, V
GS
= 0 V
0.85
32
22
15
17
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Q
rr
t
a
I
F
= 15.2 A, dI/dt = 100 A/μs,
T
J
= 25 °C
ns
Reverse recovery rise time
t
b
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
80
60
40
20
0
10000
1000
100
50
40
30
20
10
0
10000
1000
100
V
GS
= 10 V thru 5V
V
GS
= 4 V
T
C
= 25 °C
V
GS
= 3 V
T
C
= -55 °C
T
C
= 125 °C
10
10
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
C
iss
0.025
0.020
0.015
0.010
0.005
0
10000
1000
100
1200
900
600
300
0
10000
1000
100
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
10
10
0
20
40
60
80
100
0
5
10
15
20
25
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.6
1.4
1.1
0.9
0.6
10000
1000
100
V
DS
= 12.5 V
I
D
= 19 A
V
GS
= 10 V, I
D
= 19 A
V
DS
= 6 V
6
V
GS
= 4.5 V,
I
D
= 15.4 A
V
DS
= 20 V
4
2
0
10
10
0
3
6
9
12
15
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.020
0.015
0.010
0.005
0
10000
1000
T
J
= 150 °C
1
T
J
= 25 °C
T
J
= 150 °C
0.1
100
0.01
0.001
T
J
= 25 °C
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
50
2.0
1.8
1.6
1.4
1.2
1.0
10000
1000
100
I
D
= 250 μA
40
30
20
10
0
10
-50 -25
0
25
50
75 100
125 150
0.001
0.01
0.1
1
10
100
1000
Time (
s
)
T
J
– Temperature (°C)
2nd line
Threshold Voltage
Single Pulse Power
Axis Title
1000
10000
1000
100
I
DM
limited
100
Limited by
R
DS(on)
100 μs
10
1 ms
1
10 ms
100 ms
10 s, 1 s
DC
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
0.01
0.1
10
1
10
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
100
(1)
V
GS
Safe Operating Area, Junction-to-Ambient
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
48
10000
1000
100
36
Package Limited
24
12
0
10
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
Current Derating
a
20
15
10
5
2.2
1.7
1.1
0.6
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Ca
s
e Temperature (
°
C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SiZ322DT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 69 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
DM thJA
A
4. Surface Mounted
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
S
ingle Pul
s
e
0.1
0.0001
0.001
0.01
0.1
1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S17-0248-Rev. A, 20-Feb-17
Document Number: 79370
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAIR
®
3 x 3 Case Outline
D
A
A1
K2
D2
K2
d
2X
0.10 C
8
7
6
5
5
6
7
8
9
*
d
2X
0.10 C
0.15
1
2
3
4
4
3
2
1
0.10
e
b
b1
f
0.10 C
Note
* Indicates pin #1 orientation (optional)
C
d
0.08 C
MILLIMETERS
INCHES
DIM.
MIN.
0.70
0.00
0.35
0.20
0.18
2.90
2.35
2.90
0.94
0.47
NOM.
MAX.
MIN.
0.028
0.000
0.014
0.008
0.007
0.114
0.093
0.114
0.037
0.019
NOM.
MAX.
0.031
0.002
0.018
0.015
0.009
0.122
0.096
0.122
0.041
0.022
A
A1
b
0.75
0.80
0.05
0.45
0.38
0.23
3.10
2.45
3.10
1.04
0.57
0.030
0.40
0.25
0.016
0.010
b1
C
0.20
0.008
D
3.00
0.118
D2
E
2.40
0.094
3.00
0.118
E1
E2
e
0.99
0.039
0.52
0.020
0.65 BSC
0.25 typ.
0.35 typ.
0.30 typ.
0.32
0.026 BSC
0.010 typ.
0.014 typ.
0.012 typ.
0.013
K
K1
K2
L
0.27
0.37
0.011
0.015
ECN: T12-0347-Rev. C, 18-Jun-12
DWG: 5998
Revison: 18-Jun-12
Document Number: 67698
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR
®
3 x 3
0.650
0.450
0.450
(0.018)
(0.026)
(0.018)
0.209
(0.008)
2.450
(0.096)
0.084
(0.003)
0.306
(0.012)
0.390
(0.015)
1.200
(0.047)
Recommended PAD for PowerPAIR 3 x 3
Dimen
s
ion
s
in millimeter
s
(inche
s
)
Keep-Out 3.5 mm x 3.5 mm for non terminating trace
s
Document Number: 63294
Revision: 25-May-11
1
This document is subject to change without notice.
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
