Vishay-Intertech-SQA410EJ-T1-GE3
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SQA410EJ
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(
) at V
GS
= 4.5 V
R
DS(on)
(
) at V
GS
= 2.5 V
R
DS(on)
(
) at V
GS
= 1.8 V
I
D
(A)
0.028
0.034
0.038
7.8
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
D
PowerPAK SC-70-6L-Single
1
D
2
D
3
G
G
D
6
Markin
g
Code
S
D
Q A X
5
Part # code
2.05 mm
S
2.05 mm
X X X
4
Lot Tracea
b
ility
S
and Date code
N-Channel MOSFET
Ordering Information:
SQA410EJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ORDERING INFORMATION
Package
PowerPAK SC-70
SQA410EJ-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
20
V
V
GS
8
T
C
= 25 °C
7.8
Continuous Drain Current
a
I
D
T
C
= 125 °C
7.8
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
a
I
S
7.8
A
I
DM
I
AS
E
AS
24
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
L = 0.1 mH
T
C
= 25 °C
5
13.6
mJ
W
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
4.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
e, f
T
J
, T
stg
– 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
90
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
11
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
e. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQA410EJ
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
20
–
–
V
0.45
0.6
1.1
V
DS
= 0 V, V
GS
=
8 V
–
–
–
100
1
nA
μA
A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
DS
= 20 V
V
DS
= 20 V, T
J
= 125 °C
V
DS
= 20 V, T
J
= 175 °C
V
DS
5 V
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
–
–
50
–
–
250
–
I
D(on)
10
–
–
0.023
–
I
D
= 5 A
0.028
0.042
0.050
0.034
0.038
–
V
GS
= 4.5 V
I
D
= 5 A, T
J
= 125 °C
I
D
= 5 A, T
J
= 175 °C
I
D
= 4 A
–
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
–
–
S
–
0.026
0.031
31
I
D
= 3 A
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 5 A
–
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
6
–
–
–
–
388
80
485
100
45
8
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
pF
36
5
Q
gs
Q
gd
R
g
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 5.1 A
f = 1 MHz
0.55
0.79
11.89
8
–
nC
–
18
12
12
32
12
t
d(on)
t
r
t
d(off)
t
f
8
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
ns
21
8
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
24
A
V
Forward Voltage
V
SD
I
F
= 4.5 A, V
GS
= 0 V
0.75
1.2
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQA410EJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
21
18
15
12
9
18
15
12
9
V
GS
= 5 V thru 2 V
V
GS
= 1.5 V
T
C
= 25
°
C
6
6
T
C
= 125
°
C
3
V
GS
= 1 V
3
T
C
= – 55
°
C
1.8
0
0
0
2
4
6
8
10
0
0.6
1.2
2.4
3
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
50
40
30
20
10
0
T
C
= – 55
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= – 55
°
C
0
1
2
3
4
5
6
7
0.0
0.4
0.8
1.2
1.6
2.0
I
D
– Drain Current (A)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Transfer Characteristics
Transconductance
0.10
0.08
0.06
0.04
0.02
0.00
600
500
400
300
200
100
0
C
i
ss
V
GS
= 1.8 V
V
GS
= 2.5 V
C
o
ss
V
GS
= 4.5 V
C
r
ss
0
4
8
12
16
20
0
4
8
12
16
20
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQA410EJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
5
4
3
2
1
0
2.0
1.7
1.4
1.1
0.8
0.5
V
GS
= 2.5 V
I
D
= 5 A
I
D
= 5.1 A
D
S
= 10 V
V
V
GS
= 4.5 V
– 50
– 25
0
25
50
75 100
125 150 175
0
1
2
3
4
5
6
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.25
0.20
0.15
0.10
0.05
0.00
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
T
J
= 150
°
C
0.01
T
J
= 25
°
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.1
35
33
31
29
27
25
I
D
= 1 mA
– 0.1
– 0.3
– 0.5
I
D
= 5 mA
I
D
= 250 μA
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQA410EJ
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
100
I
DM
Limited
Limited by R
D
S
(on)
*
10
1
100 μ
s
1 m
s
I
D
Limited
10 m
s
100 m
s
, 1
s
, 10
s
, DC
0.1
T
C
= 25
°
C
S
ingle Pul
s
e
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
0.05
DM
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
10
-4
-3
-2
-1
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQA410EJ
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-3
-1
-4
-2
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S11-2338-Rev. A, 12-Dec-11
Document Number: 67072
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
®
PowerPAK SC70-6L
b
e
b
e
PIN1
PIN2
PIN
3
PIN1
PIN2
PIN
3
D1
D1
D2
D1
PIN4
K2
PIN6
PIN5
K1
PIN4
PIN6
K
3
PIN5
K2
K1
K2
BACK
S
IDE VIEW OF
S
INGLE
BACK
S
IDE VIEW OF DUAL
D
A
Note
s
:
1. All dimen
s
ion
s a
re in millimeter
s
2. P
a
ck
a
ge o
u
tline excl
us
ive of mold fl
as
h
a
nd met
a
l
bu
rr
3
. P
a
ck
a
ge o
u
tline incl
us
ive of pl
a
ting
Z
z
DE
T
A
IL Z
SINGLE
P
A
D
DUAL PAD
DIM
MILLIMETERS
Nom
INCHES
MILLIMETERS
INCHES
Nom
0.030
–
Min
0.675
0
Max
0.80
0.05
0.38
0.25
2.15
1.05
0.335
2.15
1.60
0.445
0.525
Min
0.027
0
Nom
0.030
Max
Min
Nom
0.75
–
Max
0.80
0.05
0.38
0.25
2.15
0.713
Min
0.027
0
Max
A
A1
b
0.75
0.032
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
0.675
0
0.032
0.002
0.015
0.010
0.085
0.028
–
–
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
0.30
0.009
0.006
0.078
0.033
0.005
0.078
0.055
0.014
0.017
0.012
0.23
0.15
1.98
0.513
0.30
0.20
2.05
0.613
0.009
0.006
0.078
0.020
0.012
0.008
0.081
0.024
C
0.20
0.008
D
2.05
0.081
D1
D2
E
0.95
0.037
0.235
0.009
2.05
0.081
1.98
0.85
2.05
0.95
2.15
1.05
0.078
0.033
0.081
0.037
0.085
0.041
E1
E2
E3
e
1.50
0.059
0.395
0.016
0.475
0.019
0.65 BSC
0.275 TYP
0.400 TYP
0.240 TYP
0.225 TYP
0.355 TYP
0.275
0.026 BSC
0.011 TYP
0.016 TYP
0.009 TYP
0.009 TYP
0.014 TYP
0.011
0.65 BSC
0.275 TYP
0.320 TYP
0.252 TYP
0.026 BSC
0.011 TYP
0.013 TYP
0.010 TYP
K
K1
K2
K3
K4
L
0.175
0.375
0.007
0.015
0.175
0.05
0.275
0.10
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
T
ECN: C-07431
−
Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
1
Application Note 826
Vishay Siliconix
RECOMMENDED
P
A
D L
A
YOUT FOR PowerPAK
®
SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
0.235 (0.009)
(0.059)
0.870 (0.034)
0.355 (0.014)
2.200 (0.087)
1.500
0.350 (0.014)
0.300 (0.012)
1
0.650 (0.026)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
Document Number: 70486
Revision: 21-Jan-08
11
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
