Vishay-Intertech-SQD15N06-42L-GE3
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SQD15N06-42L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
d
V
DS
(V)
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
60
0.042
0.060
15
R
DS(on)
(
Ω
) at V
GS
= 10 V
DS(on)
(
Ω
) at V
GS
= 4.5 V
R
• Package with low thermal resistance
I
D
(A)
Configuration
Package
Single
TO-252
• Material categorization:
for definitions of compliance please see
D
TO
-252
Drain connected to tab
G
S
S
D
N-Channel MOSFET
G
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
60
V
V
GS
20
T
T
C
= 25 °C
a
C
= 125 °C
15
Continuous Drain Current
I
D
10
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
15
A
I
DM
I
AS
E
AS
50
Single Pulse Avalanche Current
18
16.2
L = 0.1 mH
Single Pulse Avalanche Energy
mJ
W
T
C
= 25 °C
37
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
11
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
4
Notes
a. Package
limited.
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
60
1.5
–
–
–
V
2
2.5
V
DS
= 0 V, V
GS
V
GS
= 0 V
=
20 V
–
100
nA
μA
A
V
DS
= 60 V
–
–
1
50
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
GS
= 0 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
–
–
V
–
–
–
150
–
I
D(on)
V
GS
= 10 V
30
–
V
V
V
GS
= 10 V
GS
= 10 V
GS
= 10 V
I
D
= 10 A
0.036
–
0.042
0.075
0.090
–
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= 10 A
–
–
–
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
V
V
GS
= 4.5 V
GS
= 4.5 V
GS
= 4.5 V
–
0.092
0.110
0.048
11
–
–
–
0.060
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 6 A
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
425
95
40
9.5
1.7
2.5
2.5
5
535
120
50
15
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 30 V, I
D
= 15 A
f = 1 MHz
–
nC
–
–
1.2
–
5.4
8
Ω
t
d(on)
t
r
t
d(off)
t
f
–
10
13
8
15
20
12
V
DD
= 30 V, R
L
= 2
Ω
I
D
≅
15 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
–
–
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
V
SD
t
rr
–
–
–
–
50
1.2
60
A
V
Forward Voltage
I
F
= 10 A, V
GS
= 0 V
0.9
29
Reverse Recovery Time
I
F
= 15 A, dI/dt = 100 A/μs
ns
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
32
24
16
8
50
40
30
20
10
0
V
GS
= 10 V thru 6 V
V
GS
= 5 V
T
C
= 25 °C
V
GS
= 4 V
T
C
= 12
5
°
C
V
GS
= 3 V
T
C
= – 55 °C
4
0
0
0
0
2
4
6
8
10
10
60
0
2
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
25
20
15
10
5
0.10
0.08
0.06
0.04
0.02
0
T
C
= -55 °C
T
C
= 25 °C
V
GS
= 4.5 V
T
C
= 125 °C
V
GS
= 10 V
0
2
4
6
8
0
4
8
12
16
20
I
D
– Drain Current (A)
I
D
– Drain C
u
rrent (A)
Transconductance
On-Resistance vs. Drain Current
700
600
500
400
300
200
100
0
10
8
I
D
= 15 A
V
DS
= 30 V
C
iss
6
4
C
oss
2
C
rss
0
0
2
4
6
8
10
10
20
30
40
50
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
Gate Charge
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
100
I
D
= 10 A
10
T
J
= 150 °C
1
V
GS
= 10
V
V
GS
= 4.5
V
0.1
0.01
T
J
= 25 °C
0.001
-50 -25
0
25
50
75 100
125 150
175
0
0.2
0.4
0.6
0.
8
1.0
1.2
T
J
– J
u
nction Temperat
u
re (°C)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.5
0.2
0.5
0.4
0.3
0.2
0.1
0
-0.1
-0.4
-0.7
-1.0
I
D
= 5 mA
I
D
= 250 µA
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
-50 -25
0
25
50
75 100 125 150
175
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
T
J
– Temperat
u
re
(
°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
75
I
D
= 10 mA
72
69
66
63
60
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– J
u
nction Temperat
u
re (°C)
On-Resistance vs. Junction Temperature
4
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
Limited
DM
100
10
Limited by
R
100 µs
1 ms
DS(on)
*
I
D
Limited
10 ms
1
100 ms
1 s,10 s, DC
0.1
T
= 25 °C
C
Single P
u
lse
B
V
DSS Limited
0.01
0.01
*
V
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
minim
u
m
V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides.
The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD15N06-42L
Vishay Siliconix
REVISION HISTORY
a
REVISION
DATE
DESCRIPTION OF CHANGE
G
04-Aug-15
• Revised
R
g
minimum limit
Note
a. As
of April 2014
S15-1873-Rev. G, 10-Aug-15
Document Number: 68880
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
QFN32 5 x 5 Case Outline
D
D2
K
Pin 1 location
indentifier
(5)
B
Pin 1 location
indentifier
(5)
32 31 30 29 28 27 26 25
25 26 27 28 29 30 31 32
L
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
E
E2
b
9
10 11 12 13 14 15 16
16 15 14
13 12 11 10
e
9
T
e
rminal Tip
(4)
0.1
M
C A B
0.1 C
Bottom view
T
o
p view
0.1 C
0.1 C
C
A
S
eating plane
A1 A3
S
ide view
MILLIMETERS
INCHES
NOM.
0.033
–
DIM.
MIN.
NOM.
MAX.
0.95
MIN.
0.029
0.000
MAX.
0.037
0.002
A
A1
A3
b
0.75
0.00
0.85
–
0.20 ref.
0.25
0.05
0.008 ref.
0.010
0.012
0.126
0.18
3.00
0.30
3.20
0.007
0.118
D
5.00 BSC
3.10
0.197 BSC
D2
e
0.122
0.50 BSC
5.00 BSC
3.10
0.020 BSC
E
0.197 BSC
0.126
–
E2
K
3.00
0.20
0.30
3.20
–
0.118
0.008
0.012
0.122
–
–
0.016
32
0.020
L
0.40
0.50
N
(3)
Nd
(3)
Ne
(3)
32
8
8
8
8
Notes
(1)
Use millimeters as the primary measurement
Dimensioning and tolerances conform to ASME Y14.5M. – 1994
N is the number of terminals,
(2)
(3)
Nd is the number of terminals in X-direction and
Ne is the number of terminals in Y-direction.
Dimension b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip
The pin #1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body
Package warpage max. 0.05 mm
(4)
(5)
(6)
S14-2079-Rev. A, 20-Oct-14
DWG: 6027
Revision: 20-Oct-14
Document Number: 67244
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
