Vishay-Intertech-SQD40081EL-GE3
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SQD40081EL
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
TO
-252
• Package with low thermal resistance
Drain connected to tab
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
S
D
S
G
Top View
PRODUCT SUMMARY
G
V
DS
(V)
-40
R
DS(on)
(
) at V
GS
= -10 V
DS(on)
(
) at V
GS
= -4.5 V
0.0085
0.0105
-50
R
I
D
(A)
D
Configuration
Package
Single
TO-252
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-40
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
20
T
C
= 25 °C
-50
Continuous drain current
a
I
D
T
C
= 125 °C
-38
Continuous source current (diode conduction)
a
Pulsed drain current
b
I
S
-50
A
I
DM
I
AS
-200
-35
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
E
AS
61
mJ
W
T
C
= 25 °C
71
Maximum power dissipation
b
P
D
T
C
= 125 °C
23
Operating junction and storage temperature range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-ambient
PCB mount
c
°C/W
Junction-to-case (drain)
R
thJC
2.1
Notes
a. Package
limited
b. Pulse
test; pulse width
300 μs, duty cycle
2 %
c. When
mounted on 1″ square PCB (FR4 material)
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40081EL
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
-40
–
–
V
-1.5
-2.0
-2.5
V
DS
= 0 V, V
GS
=
20 V
–
–
–
–
–
–
–
100
-1
nA
μA
A
V
GS
= 0 V
V
DS
= -40 V
Zero gate voltage drain current
On-state drain current
a
I
DSS
V
GS
= 0 V
GS
= 0 V
V
DS
= -40 V, T
J
= 125 °C
V
DS
= -40 V, T
J
= 175 °C
V
DS
-5 V
–
-50
-200
–
V
–
I
D(on)
V
GS
= -10 V
-50
–
V
V
V
GS
= -10 V
GS
= -10 V
GS
= -10 V
I
D
= -25 A
0.0070 0.0085
I
D
= -25 A, T
J
= 125 °C
I
D
= -25 A, T
J
= 175 °C
I
D
= -20 A
–
–
–
0.0110
0.0131
Drain-source on-state resistance
a
R
DS(on)
–
V
GS
= -4.5 V
–
0.0086 0.0105
Forward transconductance
b
Dynamic
b
g
fs
V
DS
= -15 V, I
D
= -25 A
–
92
–
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Gate resistance
Turn-on delay time
c
Rise time
c
Turn-off delay time
c
Fall time
c
C
iss
C
oss
C
rss
Q
g
–
–
7365
576
548
138
21
9950
800
750
210
–
V
GS
= 0 V
V
DS
= -25 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= -10 V
V
DS
= -20 V, I
D
= -50 A
f = 1 MHz
–
nC
–
21
–
1.5
–
3.15
13
4.8
20
t
d(on)
t
r
t
d(off)
t
f
–
81
130
160
250
V
DD
= -20 V, R
L
= 0.4
ns
I
D
-50 A, V
GEN
= -10 V, R
g
= 1
–
103
153
–
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
-0.96
56
-200
-1.5
120
170
–
A
V
Forward voltage
I
F
= -50 A, V
GS
= 0 V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
83
I
F
= -30 A, di/dt = 100 A/μs
34
ns
A
t
b
22
–
Body diode peak reverse recovery
current
I
RM(REC)
–
-3.8
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
c. Independent
of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40081EL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
300
240
180
120
60
10000
1000
100
180
144
108
72
10000
1000
100
V
GS
= 10 V thru 5 V
V
GS
= 4 V
T
C
= 25 °C
T
C
= 125 °C
36
V
GS
= 3 V
T
C
= -55 °C
0
10
0
10
0
0
0
2
4
6
8
10
80
40
0
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
150
120
90
60
30
0
10000
1000
100
0.025
0.020
0.015
0.010
0.005
0.000
T
C
= -55 °C
T
C
= 25 °C
T
C
= 125 °C
V
GS
= 4.5 V
V
GS
= 10 V
10
16
32
48
64
16
32
48
64
80
I
D
– Drain Current (A)
2nd line
I
D
– Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
C
iss
Axis Title
10 000
8000
6000
4000
2000
0
10000
1000
100
10
8
10000
1000
100
I
D
= 50 A
V
DS
= 20 V
6
4
2
C
oss
C
rss
10
0
10
8
16
24
32
30
60
90
120
150
V
DS
– Drain-to-Source Voltage (V)
2nd line
Q
g
– Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40081EL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
2.0
1.7
1.4
1.1
0.8
0.5
10000
1000
100
100
10
10000
1000
100
V
GS
= 10 V
I
D
= 25 A
T
J
= 150 °C
V
GS
= 4.5 V
1
0.1
0.01
T
J
= 25 °C
10
10
-50 -25
0
25 50 75
100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (°C)
2nd line
V
SD
– Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.040
0.032
0.024
0.016
0.008
0.000
10000
1000
100
0.6
0.2
10000
1000
100
-0.2
-0.6
-1.0
-1.4
I
D
= 5 mA
T
J
= 125 °C
I
D
= 250 μA
T
J
= 25 °C
10
10
0
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate-to-Source Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
-43
-46
-49
-52
-55
I
D
= 1 mA
-58
-50 -25
0
25 50 75
100 125 150 175
T
J
– Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40081EL
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
I
DM
limited
1000
100
10
10000
100 μs
1000
I
D
limited
1 ms
10 ms
100 ms
1
1 s, 10 s, DC
(1)
Limited by R
DS(on)
100
0.1
T
C
= 25 °C
BVDSS limited
10
Single pulse
0.01
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operating Area
Axis Title
10000
1000
100
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
t
2
0.05
t
1
t
2
0.02
Single pulse
0.01
0.01
0.0001
10
1000
0.001
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40081EL
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
10000
1000
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
10
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities.
The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements.
The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides.
The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S17-1624-Rev. A, 23-Oct-17
Document Number: 75677
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
