Vishay-Intertech-SQD40P10-40L-GE3
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SQD40P10-40L
Vishay Siliconix
Automotive P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
d
PRODUCT SUMMARY
V
DS
(V)
– 100
0.040
0.048
– 38
R
DS(on)
(
) at V
GS
= – 10 V
DS(on)
(
) at V
GS
= – 4.5 V
R
I
D
(A)
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Configuration
Single
S
TO-252
G
Drain Connected to
T
a
b
D
G
D
S
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
SQD40P10-40L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
– 100
20
UNIT
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
– 38
– 22
– 50
I
D
Continuous Drain Current
T
C
= 125 °C
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
A
I
DM
I
AS
– 150
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
– 44
L = 0.1 mH
E
AS
96
136
mJ
W
T
C
= 25 °C
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
45
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
PCB Mount
c
Junction-to-Ambient
°C/W
R
thJC
Junction-to-Case (Drain)
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40P10-40L
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
V
DS
= V
GS
, I
D
= – 250 μA
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
– 100
–
–
V
– 1.0
– 2.0
– 2.5
V
DS
= 0 V, V
GS
=
20 V
–
–
100
– 1
nA
μA
A
V
GS
= 0 V
V
GS
= 0 V
V
DS
= – 100 V
V
DS
= – 100 V, T
J
= 125 °C
V
DS
= – 100 V, T
J
= 175 °C
V
DS
– 5 V
–
–
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
–
–
– 50
– 250
–
V
GS
= 0 V
–
–
I
D(on)
V
GS
= – 10 V
V
GS
= – 10 V
– 30
–
0.033
–
I
D
= – 9.2 A
–
–
–
–
–
0.040
0.074
0.093
0.048
–
V
GS
= – 10 V
GS
= – 10 V
I
D
= – 9.2 A, T
J
= 125 °C
I
D
= – 9.2 A, T
J
= 175 °C
I
D
= – 7.7 A
Drain-Source On-State Resistance
a
R
DS(on)
V
–
V
GS
= – 4.5 V
0.037
35
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= – 15 V, I
D
= – 9.2 A
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
–
–
4433
301
208
96
5545
380
260
144
–
V
GS
= 0 V
V
DS
= – 25 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= – 10 V
V
DS
= – 50V, I
D
= – 9.2 A
f = 1 MHz
–
8.4
23.5
3.13
11
nC
–
–
1.5
–
4.7
17
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
t
d(on)
t
r
t
d(off)
t
f
–
11
17
V
DD
= – 50 V, R
L
= 6.49
ns
I
D
– 7.7 A, V
GEN
= – 10 V, R
g
= 1.0
–
78
117
23
–
15
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
– 150
– 1.5
A
V
V
SD
I
F
= – 7.7 A, V
GS
= 0 V
Forward Voltage
– 0.8
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40P10-40L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
32
24
16
8
40
32
24
16
8
V
GS
= 10 V thru 4 V
T
C
= 25
°
C
V
GS
= 3 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
10
8
100
80
60
40
20
0
T
C
= – 55
°
C
T
C
= 25
°
C
6
T
C
= 25
°
C
T
C
= 125
°
C
4
2
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
10
20
30
40
50
0
1
2
3
4
5
I
D
– Drain Current (A)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Transfer Characteristics
Transconductance
0.10
0.08
0.06
0.04
0.02
0.00
7000
6000
5000
4000
3000
2000
1000
0
C
i
ss
V
GS
= 4.5 V
V
GS
= 10 V
C
r
ss
C
o
ss
0
8
16
24
32
40
0
20
40
60
80
100
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40P10-40L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
2.0
1.5
1.0
0.5
10
8
I
D
= 9.2 A
I
D
= 9.2 A
V
D
S
= 50 V
V
GS
= 10 V
6
V
GS
= 4.5 V
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
10 20 30 40 50 60 70 80 90
100
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.25
0.20
0.15
0.10
0.05
0.00
T
J
= 150
°
C
1
0.1
T
J
= 25
°
C
T
J
= 150
°
C
0.01
T
J
= 25
°
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
105
110
115
120
125
130
135
–
–
–
–
–
–
–
I
D
= 10 mA
0.8
0.5
I
D
= 250 μA
I
D
= 5 mA
0.2
– 0.1
– 0.4
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (
°
C)
T
J
– Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40P10-40L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100
10
100 μ
s
1 m
s
10 m
s
100 m
s
1
s
,10
s
, DC
1
Limited by R
D
S
(on)
*
T
C
= 25
°
C
S
ingle Pul
s
e
0.1
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square
W
ave Pulse D
u
r
ation (s)
Normalized Thermal Transient Impedance, Junction-to-Case
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD40P10-40L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 50 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
0.02
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S11-1559-Rev. B 22-Aug-11
Document Number: 67022
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Ordering Information
Vishay Siliconix
DPAK / TO-252 and Reverse DPAK
Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages:
DATASHEET PART NUMBER
SQD07N25-350H
SQD100N02-3m5L
SQD100N03-3m2L
SQD100N03-3m4
SQD100N04-3m6
SQD100N04-3m6L
SQD10N30-330H
SQD15N06-42L
SQD19P06-60L
SQD23N06-31L
SQD25N06-22L
SQD25N15-52
OLD ORDERING CODE
a
SQD07N25-350H-GE3
–
NEW ORDERING CODE
SQD07N25-350H_GE3
SQD100N02-3m5L_GE3
SQD100N03-3M2L_GE3
SQD100N03-3M4_GE3
SQD100N04-3M6_GE3
SQD100N04-3M6L_GE3
SQD10N30-330H_GE3
SQD15N06-42L_GE3
SQD19P06-60L_GE3
SQD23N06-31L_GE3
SQD25N06-22L_GE3
SQD25N15-52_GE3
SQD30N05-20L_GE3
SQD40N06-14L_GE3
SQD40N10-25_GE3
SQD40P10-40L_GE3
SQD45P03-12_GE3
SQD50N04-5M6_GE3
SQD50N04-5m6L_GE3
SQD50N05-11L_GE3
SQD50N06-09L_GE3
SQD50N10-8M9L_GE3
SQD50P03-07_GE3
SQD50P04-13L_GE3
SQD50P04-09L_GE3
SQD50P06-15L_GE3
SQD50P08-25L_GE3
SQD50P08-28_GE3
SQD70140EL_GE3
SQD100N03-3M2L-GE3
SQD100N03-3M4-GE3
SQD100N04-3M6-GE3
SQD100N04-3M6L-GE3
SQD10N30-330H-GE3
SQD15N06-42L-GE3
SQD19P06-60L-GE3
SQD23N06-31L-GE3
SQD25N06-22L-GE3
SQD25N15-52-GE3
SQD30N05-20L-GE3
SQD40N06-14L-GE3
SQD40N10-25-GE3
SQD40P10-40L-GE3
SQD45P03-12-GE3
SQD50N04-5M6-GE3
–
SQD30N05-20L
SQD40N06-14L
SQD40N10-25
SQD40P10-40L
SQD45P03-12
SQD50N04-5m6
SQD50N04-5m6L
SQD50N05-11L
SQD50N06-09L
SQD50N10-8m9L
SQD50P03-07
SQD50N05-11L-GE3
SQD50N06-09L-GE3
SQD50N10-8M9L-GE3
SQD50P03-07-GE3
SQD50P04-13L-GE3
SQD50P04-09L-GE3
SQD50P06-15L-GE3
SQD50P08-25L-GE3
SQD50P08-28-GE3
–
SQD50P04-13L
SQD50P04-09L
SQD50P06-15L
SQD50P08-25L
SQD50P08-28
SQD70140EL
SQD90P04-9m4L
SQD97N06-6m3L
SQR40N10-25
SQD90P04-9M4L-GE3
SQD97N06-6M3L-GE3
SQR40N10-25-GE3
SQR50N04-3M8-GE3
SQD90P04-9M4L_GE3
SQD97N06-6M3L_GE3
SQR40N10-25_GE3
SQR50N04-3M8_GE3
SQR50N04-3m8
Note
a. Old
ordering code is obsolete and no longer valid for new orders
Revision: 01-Jul-16
Document Number: 66957
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
