Vishay-Intertech-SQD50N04-4M5L-GE3
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SQD50N04-4m5L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
40
R
DS(on)
(
) at V
GS
= 10 V
R
DS(on)
(
) at V
GS
= 4.5 V
0.0035
0.0042
50
• 100 % R
g
and UIS Tested
I
D
(A)
• Material categorization:
For definitions of compliance please see
Configuration
Single
TO-252
D
G
Drain Connected to
T
a
b
D
G
S
N-Channel MOSFET
S
Top View
ORDERING INFORMATION
Package
TO-252
SQD50N04-4m5L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
T
C
= 25 °C
50
Continuous Drain Current
a
I
D
T
C
= 125 °C
50
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
50
A
I
DM
I
AS
E
AS
200
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
55
151
L = 0.1 mH
T
C
= 25 °C
mJ
W
136
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
45
Operating Junction and Storage Temperature Range
T
J
, T
stg
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD50N04-4m5L
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
40
1.5
–
–
–
–
–
–
–
–
–
V
2.5
V
DS
= 0 V, V
GS
=
20 V
100
1
nA
μA
A
V
GS
= 0 V
V
DS
= 40 V
V
DS
= 40 V, T
J
= 125 °C
V
DS
= 40 V, T
J
= 175 °C
V
DS
5 V
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
–
50
150
–
–
I
D(on)
50
–
V
V
GS
= 10 V
GS
= 10 V
I
D
= 20 A
0.0030 0.0035
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
I
D
= 20 A
–
–
–
0.0056
0.0068
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
–
–
0.0035 0.0042
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 15 A
–
105
–
S
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
1
–
–
–
–
4880
560
250
85
14
14
2
5860
670
300
130
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 20 V, I
D
= 50 A
f = 1 MHz
nC
–
3
t
d(on)
t
r
t
d(off)
t
f
9
11
14
47
14
11
39
11
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 1
ns
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
200
1.5
A
V
Forward Voltage
V
SD
I
F
= 30 A, V
GS
= 0 V
0.9
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD50N04-4m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
80
60
40
20
0
100
80
60
40
20
0
V
= 10 V thru 4 V
GS
T
= 25 °C
C
V
= 3 V
GS
T
= 125 °C
C
T
= – 55 °C
4
C
0
3
6
9
12
15
0
1
2
3
5
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Transfer Characteristics
Output Characteristics
300
240
180
120
60
0.010
0.008
0.006
0.004
0.002
0.000
T
= – 55 °C
C
T
= 25 °C
C
V
= 4.5 V
GS
T
= 125 °C
C
V
= 10 V
40
GS
0
0
14
28
42
56
70
0
20
60
80
100
I
– Drain Current (A)
I
D
– Drain Current (A)
D
On-Resistance vs. Drain Current
Transconductance
7000
6000
5000
4000
3000
2000
1000
0
10
8
I
= 50 A
D
C
i
ss
6
V
= 20 V
D
S
4
C
o
ss
2
C
r
ss
0
0
10
20
30
40
0
10
20
30
40
50
60
70
80
90
V
D
S
– Drain-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
Capacitance
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD50N04-4m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.3
2.0
1.7
1.4
1.1
0.8
0.5
52
50
48
46
44
42
40
I
= 10 mA
D
I
= 20 A
D
V
= 10 V
GS
V
= 4.5 V
GS
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (°C)
T
J
– Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
0.030
On-Resistance vs. Junction Temperature
100
10
0.024
0.018
0.012
0.006
0.000
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0.01
T
= 150 °C
J
T
= 25 °C
J
0.001
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
S
D
–
S
ource-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.7
0.2
– 0.3
– 0.8
– 1.3
I
= 5 mA
D
I
= 250 μA
D
– 1.8
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Temperature (°C)
Threshold Voltage
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD50N04-4m5L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
Limited
DM
100
10
Limited by R
*
D
S
(on)
100 μ
s
I
Limited
D
1 m
s
10 m
s
100 m
s
, 1
s
, 10
s
, DC
1
0.1
T
C
= 25 °C
S
ingle Pul
s
e
BVD
SS
Limited
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQD50N04-4m5L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S12-2006-Rev. C, 20-Aug-12
Document Number: 70623
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
E1
Note
Dimension L3 is for reference only.
•
Revision: 02-Sep-13
Document Number: 64424
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
