Vishay-Intertech-SQJ402EP-T1-GE3

SQJ402EP  

Vishay Siliconix  

Automotive N-Channel 100 V (D-S) 175 °C MOSFET  

FEATURES  

• TrenchFET

®

Power MOSFET  

• AEC-Q101 Qualified

d  

PRODUCT SUMMARY  

V

DS

(V)  

100  

0.0110  

0.0140  

32  

• 100 % R

g

and UIS Tested  

• Material categorization:  

For definitions of compliance please see  

R

DS(on)

(



) at V

GS

= 10 V  

R

DS(on)

(



) at V

GS

= 4.5 V  

I

D

(A)  

Configuration  

Single  

D

PowerPAK

®

SO-8L Single  

G

D

4

G

3

S

S

N-Channel MOSFET  

2

S

1

S

ORDERING INFORMATION  

Package  

PowerPAK SO-8L  

SQJ402EP-T1-GE3  

Lead (Pb)-free and Halogen-free  

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

LIMIT  

UNIT  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

100  

V

V

GS  

20  

T

C

= 25 °C  

32  

Continuous Drain Current

a  

I

D  

T

32  

Continuous Source Current (Diode Conduction)

a  

Pulsed Drain Current

b  

I

S  

32  

A

I

DM  

I

AS  

E

AS  

75  

Single Pulse Avalanche Current  

Single Pulse Avalanche Energy  

31  

L = 0.1 mH  

48  

mJ  

W

T

C

= 25 °C  

83  

27  

Maximum Power Dissipation

b  

P

D  

T

C

= 125 °C  

Operating Junction and Storage Temperature Range  

Soldering Recommendations (Peak Temperature)

e, f  

T

J

, T

stg  

– 55 to + 175  

260  

°C  

THERMAL RESISTANCE RATINGS  

PARAMETER  

SYMBOL  

R

thJA  

LIMIT  

65  

UNIT  

Junction-to-Ambient  

PCB Mount

c  

°C/W  

Junction-to-Case (Drain)  

R

thJC  

1.8  

Notes  

a. Package

 

limited.  

b. Pulse

 

test; pulse width



300 μs, duty cycle



2 %.  

c. When

 

mounted on 1″ square PCB (FR-4 material).  

d. Parametric

 

verification ongoing.  

e. See

 

solder profile (

). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed  

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  

and is not required to ensure adequate bottom side solder interconnection.  

f. Rework

 

conditions: manual soldering with a soldering iron is not recommended for leadless components.  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

1

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

SQJ402EP  

Vishay Siliconix  

SPECIFICATIONS

(T

C

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN.  

TYP.  

MAX. UNIT  

Static  

Drain-Source Breakdown Voltage  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

V

DS  

V

GS(th)  

I

GSS  

V

GS

= 0 V, I

D

= 250 μA  

V

DS

= V

GS

, I

D

= 250 μA  

100  

–

2.0  

–

–

V

1.5  

–

2.5  

V

DS

= 0 V, V

GS  

=

20 V  

100  

1

nA  

μA  

A

V

GS

= 0 V  

V

GS

= 0 V  

V

GS

= 0 V  

V

GS

= 10 V  

V

DS

= 100 V  

V

DS

= 100 V, T

J

= 125 °C  

V

DS

= 100 V, T

J

= 175 °C  

V

DS



5 V  

–

–

Zero Gate Voltage Drain Current  

On-State Drain Current

a  

I

DSS  

–

–

50  

150  

–

–

–

I

D(on)  

30  

–

–

V

V

I

D

= 10.7 A  

0.0090 0.0110  

I

D

= 10.7 A, T

J

= 125 °C  

I

D

= 10.7 A, T

J

= 175 °C  

I

D

= 9.5 A  

–

–

–

0.0170  

0.0210  

Drain-Source On-State Resistance

a  

R

DS(on)  



V

GS

= 10 V  

V

GS

= 4.5 V  

–

–

0.0115 0.0140  

Forward Transconductance

b  

Dynamic

b  

g

fs  

V

DS

= 15 V, I

D

= 10.7 A  

–

54  

–

S

Input Capacitance  

Output Capacitance  

Reverse

T

r

ansfer Capacitance  

Total Gate Charge

c  

Gate-Source Charge

c  

Gate-Drain Charge

c  

Gate Resistance  

Turn-On Delay Time

c  

Rise Time

c  

Turn-Off Delay Time

c  

Fall Time

c  

C

iss  

C

oss  

C

rss  

Q

g  

–

1829  

722  

62  

2286  

903  

78  

51  

–

V

GS

= 0 V  

V

DS

= 25 V, f = 1 MHz  

–

pF  

–

–

34  

Q

gs  

Q

gd  

R

g  

V

V

DS

= 50 V, I

D

= 10 A  

f = 1 MHz  

–

6

nC  

–

13  

–

0.65  

1.39  

10  

2



t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

15  

15  

40  

11  

10  

V

DD

= 50 V, R

L

= 5

  

I

D



10 A, V

GEN

= 10 V, R

g

= 1

  

ns  

27  

7

Source-Drain Diode Ratings and Characteristics

b  

Pulsed Current

a  

I

SM  

–

–

–

75  

A

V

Forward Voltage  

V

SD  

I

F

= 7 A, V

GS

= 0 V  

0.77  

1.2  

Notes  

g. Pulse

 

test; pulse width



300 μs, duty cycle



2 %.  

h. Guaranteed

 

by design, not subject to production testing.  

i. Independent

 

of operating temperature.  

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  

rating conditions for extended periods may affect device reliability.  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

2

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

SQJ402EP  

Vishay Siliconix  

TYPICAL CHARACTERISTICS

(T

A

= 25 °C, unless otherwise noted)  

80  

64  

48  

32  

16  

0

80  

64  

48  

32  

16  

0

V

V

GS

= 4 V  

T

C

= 25

°

C  

T

C

= 125

°

C  

V

GS

= 3 V  

T

C

= – 55

°

C  

0

2

4

6

8

10  

0

0

0

3

6

9

12  

15  

V

GS

–

G

ate-to-

S

ource Voltage (V)  

V

D

S

– Drain-to-

S

ource Voltage (V)  

Output Characteristics  

Transfer Characteristics  

100  

80  

60  

40  

20  

0

10.0  

8.0  

6.0  

4.0  

2.0  

0.0  

T

C

= – 55

°

C  

T

C

= 25

°

C  

T

C

= 125

°

C  

T

C

= 25

°

C  

T

C

= 125

°

C  

T

C

= – 55

°

C  

5

10  

15  

20  

25  

0

1

2

3

4

5

I

D

– Drain Current (A)  

V

GS

–

G

ate-to-

S

ource Voltage (V)  

Transconductance  

Transfer Characteristics  

4000  

3200  

2400  

1600  

800  

0.025  

0.020  

0.015  

0.010  

0.005  

0.000  

V

GS

= 4.5 V  

C

i

ss  

C

o

ss  

V

GS

= 10 V  

C

r

ss  

0

20  

40  

60  

80  

100  

0

16  

32  

48  

64  

80  

V

D

S

– Drain-to-

S

ource Voltage (V)  

I

D

– Drain Current (A)  

Capacitance  

On-Resistance vs. Drain Current  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

3

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

SQJ402EP  

Vishay Siliconix  

TYPICAL CHARACTERISTICS

(T

A

= 25 °C, unless otherwise noted)  

100  

10  

8

I

D

= 10 A  

10  

V

D

S

= 50 V  

T

J

= 150

°

C  

1

6

0.1  

4

T

J

= 25

°

C  

0.01  

0.001  

2

0

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

0

8

16  

24  

32  

40  

V

S

D

–

S

ource-to-Drain Voltage (V)  

Q

g

– Total

G

ate Charge (nC)  

Gate Charge  

Source Drain Diode Forward Voltage  

2.5  

2.0  

1.5  

1.0  

0.5  

0.5  

0.1  

V

GS

= 10 V  

I

D

= 20 A  

I

D

= 5 mA  

– 0.3  

– 0.7  

– 1.1  

– 1.5  

I

D

= 250 μA  

V

GS

= 4.5 V  

– 50

 

– 25  

0

25  

50  

75 100

 

125 150 175  

– 50

 

– 25  

0

25  

50  

75 100

 

125 150 175  

T

J

– Junction Temperature (

°

C)  

T

J

– Temperature (

°

C)  

On-Resistance vs. Junction Temperature  

Threshold Voltage  

0.05  

0.04  

0.03  

0.02  

0.01  

0.00  

125  

120  

115  

110  

105  

100  

I

D

= 1 mA  

T

J

= 25

°

C  

T

J

= 150

°

C  

– 50

 

– 25  

0

25  

50  

75 100

 

125 150 175  

0

2

4

6

8

10  

T

J

– Junction Temperature (

°

C)  

V

GS

–

G

ate-to-

S

ource Voltage (V)  

On-Resistance vs. Gate-to-Source Voltage  

Drain Source Breakdown vs. Junction Temperature  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

4

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

SQJ402EP  

Vishay Siliconix  

THERMAL RATINGS

(T

A

= 25 °C, unless otherwise noted)  

100  

I

DM

Limited  

100 μ

s  

10  

I

D

Limited  

1 m

s  

10 m

s  

1

100 m

s  

1

s

, 10

s

, DC  

Limited by R

D

S

(on)  

*

0.1  

BVD

SS

Limited  

T

C

= 25

°

C  

S

ingle Pul

s

e  

0.01  

0.01  

0.1  

1

10  

100  

1000  

V

D

S

– Drain-to-

S

ource Voltage (V)  

* V

GS

> minimum V

GS

at which R

D

S

(on)

i

s s

pecified  

Safe Operating Area  

1

Duty Cycle = 0.5  

0.2  

Notes:  

P

DM  

0.1  

0.1  

t

0.05  

1

t

2

t

t

1

2

1. Duty Cycle, D =  

0.02  

2. Per Unit Base = R  

= 65 °C/W  

thJA  

(t)  

Z

Single Pulse  

3.

T

JM

–

T =

 

P  

A

DM thJA  

4. Surface Mounted  

0.01  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

Square Wave Pulse Duration (s)  

Normalized Thermal Transient Impedance, Junction-to-Ambient  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

5

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

SQJ402EP  

Vishay Siliconix  

THERMAL RATINGS

(T

A

= 25 °C, unless otherwise noted)  

1

Duty Cycle = 0.5  

0.2  

0.1  

0.1  

0.05  

Single Pulse  

0.02  

0.01  

0.0001  

0.001  

0.01  

0.1  

1

10  

Square Wave Pulse Duration (s)  

Normalized Thermal Transient Impedance, Junction-to-Case  

Note  

•

The characteristics shown in the two graphs  

– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)  

– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)  

are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single  

pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part  

mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities  

can widely vary depending on actual application parameters and operating conditions.  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  

reliability data, see

.  

S13-1414-Rev. B, 24-Jun-13  

Document Number: 67997  

6

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Ordering Information  

Vishay Siliconix  

PowerPAK

®

SO-8L  

Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:  

DATASHEET PART NUMBER  

SQJ200EP  

SQJ202EP  

SQJ401EP  

SQJ402EP  

SQJ403EEP  

SQJ403EP  

SQJ410EP  

SQJ412EP  

SQJ416EP  

SQJ418EP  

SQJ422EP  

SQJ423EP  

SQJ431EP  

SQJ443EP  

SQJ444EP  

SQJ446EP  

SQJ456EP  

SQJ457EP  

SQJ459EP  

SQJ460AEP  

SQJ461EP  

SQJ463EP  

SQJ465EP  

SQJ469EP  

SQJ474EP  

SQJ476EP  

SQJ479EP  

SQJ486EP  

SQJ488EP  

SQJ500AEP  

SQJ840EP  

SQJ844AEP  

SQJ850EP  

SQJ858AEP  

SQJ868EP  

SQJ886EP  

SQJ910AEP  

SQJ912AEP  

SQJ940EP  

SQJ942EP  

SQJ951EP  

SQJ952EP  

SQJ956EP  

SQJ960EP  

SQJ963EP  

SQJ968EP  

SQJ980AEP  

SQJ992EP  

OLD ORDERING CODE

a  

NEW ORDERING CODE  

SQJ200EP-T1_GE3  

SQJ202EP-T1_GE3  

SQJ401EP-T1_GE3  

SQJ402EP-T1_GE3  

SQJ403EEP-T1_GE3  

SQJ403EP-T1_GE3  

SQJ410EP-T1_GE3  

SQJ412EP-T1_GE3  

SQJ416EP-T1_GE3  

SQJ418EP-T1_GE3  

SQJ422EP-T1_GE3  

SQJ423EP-T1_GE3  

SQJ431EP-T1_GE3  

SQJ443EP-T1_GE3  

SQJ444EP-T1_GE3  

SQJ446EP-T1_GE3  

SQJ456EP-T1_GE3  

SQJ457EP-T1_GE3  

SQJ459EP-T1_GE3  

SQJ460AEP-T1_GE3  

SQJ461EP-T1_GE3  

SQJ463EP-T1_GE3  

SQJ465EP-T1_GE3  

SQJ469EP-T1_GE3  

SQJ474EP-T1_GE3  

SQJ476EP-T1_GE3  

SQJ479EP-T1_GE3  

SQJ486EP-T1_GE3  

SQJ488EP-T1_GE3  

SQJ500AEP-T1_GE3  

SQJ840EP-T1_GE3  

SQJ844AEP-T1_GE3  

SQJ850EP-T1_GE3  

SQJ858AEP-T1_GE3  

SQJ868EP-T1_GE3  

SQJ886EP-T1_GE3  

SQJ910AEP-T1_GE3  

SQJ912AEP-T1_GE3  

SQJ940EP-T1_GE3  

SQJ942EP-T1_GE3  

SQJ951EP-T1_GE3  

SQJ952EP-T1_GE3  

SQJ956EP-T1_GE3  

SQJ960EP-T1_GE3  

SQJ963EP-T1_GE3  

SQJ968EP-T1_GE3  

SQJ980AEP-T1_GE3  

SQJ992EP-T1_GE3  

–

–

SQJ401EP-T1-GE3  

SQJ402EP-T1-GE3  

SQJ403EEP-T1-GE3  

–

SQJ410EP-T1-GE3  

SQJ412EP-T1-GE3  

–

–

SQJ422EP-T1-GE3  

–

SQJ431EP-T1-GE3  

SQJ443EP-T1-GE3  

–

–

SQJ456EP-T1-GE3  

–

–

–

SQJ461EP-T1-GE3  

SQJ463EP-T1-GE3  

SQJ465EP-T1-GE3  

SQJ469EP-T1-GE3  

–

–

–

SQJ486EP-T1-GE3  

SQJ488EP-T1-GE3  

SQJ500AEP-T1-GE3  

SQJ840EP-T1-GE3  

SQJ844AEP-T1-GE3  

SQJ850EP-T1-GE3  

SQJ858AEP-T1-GE3  

–

SQJ886EP-T1-GE3  

SQJ910AEP-T1-GE3  

SQJ912AEP-T1-GE3  

SQJ940EP-T1-GE3  

SQJ942EP-T1-GE3  

SQJ951EP-T1-GE3  

–

SQJ956EP-T1-GE3  

SQJ960EP-T1-GE3  

SQJ963EP-T1-GE3  

SQJ968EP-T1-GE3  

SQJ980AEP-T1-GE3  

SQJ992EP-T1-GE3  

Note  

a. Old

 

ordering code is obsolete and no longer valid for new orders  

Revision: 01-Jul-16  

Document Number: 65804  

1

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Package Information  

Vishay Siliconix  

PowerPAK

®

SO-8L Case Outline  

for Al Parts  

Revision: 07-Sep-15  

Document Number: 66934  

1

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Package Information  

Vishay Siliconix  

MILLIMETERS  

NOM.  

1.07  

–

INCHES  

DIM.  

MIN.  

1.00  

0.00  

0.33  

0.44  

4.80  

MAX.  

1.14  

0.127  

0.48  

0.58  

5.00  

MIN.  

0.039  

0.00  

NOM.  

0.042  

–

MAX.  

0.045  

0.005  

0.019  

0.023  

0.197  

A

A1  

b

0.41  

0.51  

4.90  

0.094  

0.47  

0.25  

5.13  

4.90  

3.96  

1.73  

1.27 BSC  

6.15  

4.37  

2.85  

–

0.013  

0.017  

0.189  

0.016  

0.020  

0.193  

0.004  

0.019  

0.010  

0.202  

0.193  

0.156  

0.068  

0.050 BSC  

0.242  

0.172  

0.112  

–

b1  

b2  

b3  

b4  

c

0.20  

5.00  

4.80  

3.86  

1.63  

0.30  

5.25  

5.00  

4.06  

1.83  

0.008  

0.197  

0.189  

0.152  

0.064  

0.012  

0.207  

0.197  

0.160  

0.072  

D

D1  

D2  

D3  

e

E

6.05  

4.27  

2.75  

–

6.25  

4.47  

2.95  

0.15  

0.82  

1.22  

0.238  

0.168  

0.108  

–

0.246  

0.176  

0.116  

0.006  

0.032  

0.048  

E1  

E2  

F

L

0.62  

0.92  

0.72  

1.07  

0.51  

0.23  

0.41  

2.82  

2.96  

–

0.024  

0.036  

0.028  

0.042  

0.020  

0.009  

0.016  

0.111  

0.117  

–

L1  

K

W

W1  

W2  

W3  

q

0°  

10°  

0°  

10°  

ECN: C15-1203-Rev. A, 07-Sep-15  

DWG: 6044  

Note  

•

Millimeters will gover  

Revision: 07-Sep-15  

Document Number: 66934  

2

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

PAD Pattern  

Vishay Siliconix  

RECOMMENDED MINIMUM PAD FOR PowerPAK

®

SO-8L SINGLE  

5.000  

(0.197)  

0.510  

(0.020)  

4.061  

(0.160)  

3.630  

(0.143)  

0.595  

(0.023)  

0.610  

(0.024)  

0.710  

(0.028)  

2.715  

(0.107)  

0.860  

(0.034)  

0.410  

(0.016)  

0.820  

(0.032)  

1.905  

1.270  

(0.075)  

(0.050)  

7.250  

(0.285)  

Recommended Minimum Pad

s

 

Dimen

s

ion

s

in mm (inche

s

)  

Revision: 07-Feb-12  

Document Number: 63818  

1

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Legal Disclaimer Notice  

Vishay  

Disclaimer  



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time. All

 

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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 08-Feb-17  

Document Number: 91000  

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