Vishay-Intertech-SQJA68EP-T1-GE3
| Part # | Vishay-Intertech-SQJA68EP-T1-GE3 |
Download  | Vishay-Intertech-SQJA68EP-T1-GE3 |
SQJA68EP
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK
®
S
O-8L
S
ingle
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
D
• Material categorization:
for definitions of compliance please see
1
S
2
S
3
S
4
G
D
1
Top View
Bottom View
PRODUCT SUMMARY
V
DS
(V)
G
100
0.0920
0.1170
14
R
DS(on)
(
Ω
) at V
GS
= 10 V
DS(on)
(
Ω
) at V
GS
= 4.5 V
R
I
D
(A) per leg
S
Configuration
Package
Single
N-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
V
DS
100
V
V
GS
20
T
T
C
= 25 °C
14
Continuous drain current
I
D
C
= 125 °C
8
Continuous source current (diode conduction)
a
Pulsed drain current
b
I
S
15
A
I
DM
I
AS
17
Single pulse avalanche current
Single pulse avalanche energy
9
L = 0.1 mH
E
AS
4
45
mJ
W
T
C
= 25 °C
Maximum power dissipation
b
P
D
T
C
= 125 °C
15
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
T
J
, T
stg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
70
UNIT
Junction-to-ambient
PCB mount
c
°C/W
Junction-to-case (drain)
R
thJC
3.3
Notes
a. Package
limited
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %
c. When
mounted on 1″ square PCB (FR4 material)
d. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0807-Rev. A, 22-May-17
Document Number: 75561
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQJA68EP
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
100
–
2.0
–
–
2.5
100
1
V
1.5
–
V
DS
= 0 V, V
GS
V
GS
= 0 V
GS
= 0 V
=
20 V
nA
V
DS
= 100 V
V
DS
= 100 V, T
J
= 125 °C
V
DS
= 100 V, T
J
= 175 °C
V
DS
≥
5 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
V
–
–
50
150
–
μA
A
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
–
–
I
D(on)
6
–
–
I
D
= 4 A
0.0765 0.0920
0.0967 0.1170
V
GS
= 4.5 V
I
D
= 3 A
–
Drain-source on-state resistance
a
R
DS(on)
Ω
V
GS
= 10 V
GS
= 10 V
I
D
= 4 A, T
J
= 125 °C
I
D
= 4 A, T
J
= 175 °C
–
–
–
0.1620
0.2056
–
V
–
Forward transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 4 A
–
8.6
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Gate resistance
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
2
–
–
–
–
212
118
15
4.7
0.8
1.3
4
280
160
20
8
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 50 V, I
D
= 3 A
f = 1 MHz
–
nC
–
6
Ω
Turn-on delay time
c
Rise time
c
t
d(on)
t
r
t
d(off)
t
f
9
15
10
30
10
5
V
DD
= 50 V, R
L
= 33.3
Ω
I
D
≅
1.5 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Turn-off delay time
c
Fall time
c
15
5
Source-Drain Diode Ratin
g
s and Characteristics
b
Pulsed current
a
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
–
17
1.2
60
55
–
A
V
Forward voltage
I
F
= 4 A, V
GS
= 0 V
0.88
29
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ns
nC
ns
ns
A
Qrr
27
I
F
= 3 A, di/dt = 100 A/μs
t
a
19
t
b
10
–
I
RM(REC)
-1.9
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %
b. Guaranteed
by design, not subject to production testing
c. Independent
of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0807-Rev. A, 22-May-17
Document Number: 75561
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQJA68EP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
20
16
12
8
10000
1000
100
15
12
9
10000
1000
V
GS
= 10 V thru 5 V
V
GS
= 4 V
6
T
C
= 25 °C
100
10
4
3
T
C
= 125 °C
V
GS
= 3 V
T
C
= -55 °C
0
10
0
0
2
4
6
8
10
0
0
0
2
4
6
8
10
10
5
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
15
12
9
10000
1000
100
0.30
0.24
0.18
0.12
0.06
0.00
10000
1000
100
T
C
= -55 °C
T
C
= 25 °C
V
GS
= 4.5 V
T
C
= 125 °C
6
V
GS
= 10 V
3
0
10
10
0
2
4
6
8
10
2
4
6
8
I
D
– Drain Current (A)
2nd line
I
D
– Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
400
320
240
160
80
10000
1000
100
10
8
10000
1000
100
I
D
= 3 A
V
DS
= 50 V
6
C
iss
4
C
oss
2
C
rss
0
10
0
10
0
20
40
60
80
100
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
2nd line
Q
g
– Total Gate Charge (nC)
2nd line
Capacitance
Gate Char
g
e
S17-0807-Rev. A, 22-May-17
Document Number: 75561
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQJA68EP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
2.5
2.1
1.7
1.3
0.9
0.5
10000
1000
100
100
10
10000
1000
I
D
= 4 A
V
GS
= 10 V
T
J
= 150 °C
1
V
GS
= 4.5 V
0.1
T
J
= 25 °C
100
0.01
0.001
10
10
-50 -25
0
25 50 75
100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (°C)
2nd line
V
SD
– Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Volta
g
e
Axis Title
Axis Title
0.5
0.4
0.3
0.2
0.1
0.0
10000
1000
100
0.5
0.2
10000
1000
100
-0.1
-0.4
-0.7
-1.0
I
D
= 5 mA
T
J
= 150 °C
I
D
= 250 μA
T
J
= 25 °C
10
10
0
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate-to-Source Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Volta
g
e
Threshold Volta
g
e
Axis Title
125
10000
1000
100
I
D
= 1 mA
121
117
113
109
105
10
-50 -25
0
25 50 75
100 125 150 175
T
J
– Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S17-0807-Rev. A, 22-May-17
Document Number: 75561
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQJA68EP
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
100
10000
1000
I
DM
limited
10
1
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
(1)
100
Limited by R
DS(on)
0.1
T
C
= 25 °C
Single pulse
BVDSS limited
10
0.01
10
1000
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operatin
g
Area
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
Single Pulse
0.01
A
DM thJA
4. Surface Mounted
0.01
0.0001
0.001
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-0807-Rev. A, 22-May-17
Document Number: 75561
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQJA68EP
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities.
The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements.
The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides.
The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S17-0807-Rev. A, 22-May-17
Document Number: 75561
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
SO-8L Case Outline 2
Revision: 05-Aug-2019
Document Number: 66934
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
MILLIMETERS
NOM.
1.07
–
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
–
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
2.85
–
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.112
–
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
2.75
–
6.25
4.47
2.95
0.15
0.82
1.22
0.238
0.168
0.108
–
0.246
0.176
0.116
0.006
0.032
0.048
E1
E2
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
–
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
–
L1
K
W
W1
W2
W3
q
0°
10°
0°
10°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6044
Note
•
Millimeters will gover
Revision: 05-Aug-2019
Document Number: 66934
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK
®
SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pad
s
Dimen
s
ion
s
in mm (inche
s
)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
