Vishay-Intertech-SQM10250E-GE3
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SQM10250E
Vishay Siliconix
Automotive N-Channel 250 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
TO-263
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
S
D
Top View
D
PRODUCT SUMMARY
V
DS
(V)
G
250
0.0300
0.0320
65
R
DS(on)
(
) at V
GS
= 10 V
DS(on)
(
) at V
GS
= 7.5 V
R
N-Channel MOSFET
S
I
D
(A)
Configuration
Package
Single
TO-263
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
250
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
20
T
T
C
= 25 °C
65
Continuous drain current
I
D
C
= 125 °C
37
Continuous source current (diode conduction)
a
Pulsed drain current
b
I
S
120
A
I
DM
I
AS
180
Single pulse avalanche current
Single pulse avalanche energy
41
L = 0.1 mH
E
AS
84
mJ
W
T
C
= 25 °C
375
Maximum power dissipation
b
P
D
T
C
= 125 °C
125
Operating junction and storage temperature range
T
J
, T
stg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-ambient
PCB mount
c
°C/W
Junction-to-case (drain)
R
thJC
0.4
Notes
a. Package
limited
b. Pulse
test; pulse width
300 μs, duty cycle
2 %
c. When
mounted on 1″ square PCB (FR4 material)
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM10250E
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
250
–
3.0
–
–
V
2.5
–
3.5
V
DS
= 0 V, V
GS
=
20 V
100
1
nA
μA
A
V
GS
= 0 V
V
DS
= 250 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
V
GS
= 0 V
GS
= 0 V
V
DS
= 250 V, T
J
= 125 °C
V
DS
= 250 V, T
J
= 175 °C
V
DS
5 V
–
–
50
600
–
V
–
–
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
30
–
–
I
D
= 15 A
0.0244 0.0300
0.0260 0.0320
V
GS
= 7.5 V
I
D
= 10 A
–
Drain-source on-state resistance
a
R
DS(on)
V
V
GS
= 10 V
GS
= 10 V
I
D
= 15 A, T
J
= 125 °C
I
D
= 15 A, T
J
= 175 °C
–
–
–
0.0650
0.0868
–
–
Forward transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 15 A
–
50
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Gate Resistance
Turn-on delay time
c
Rise time
c
Turn-off delay time
c
Fall time
c
C
iss
C
oss
C
rss
Q
g
–
2880
1480
58
4050
2100
85
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
–
pF
–
–
50
75
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 125 V, I
D
= 10 A
f = 1 MHz
–
12
–
nC
–
15
–
1.40
2.84
14
4.40
30
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
6
15
V
DD
= 125 V, R
L
= 12.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
ns
38
60
10
20
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
180
1.5
260
1400
–
A
V
Forward voltage
I
F
= 20 A, V
GS
= 0 V
0.82
155
933
122
33
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
ns
Q
rr
t
a
I
F
= 10 A, di/dt = 100 A/μs
t
b
–
Body diode peak reverse recovery
current
I
RM(REC)
–
-11.6
–
A
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
c. Independent
of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM10250E
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
160
120
80
10000
1000
100
120
96
72
48
24
0
10000
1000
100
V
GS
= 10 V thru 8 V
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5 V
T
C
= 25 °C
40
T
C
= 125 °C
2
V
GS
= 4 V
8
T
C
= -55 °C
0
10
10
0
2
4
6
10
0
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
0.050
0.040
0.030
0.020
0.010
0.000
90
72
54
36
18
0
10000
1000
100
T
C
= -55 °C
T
C
= 25 °C
V
GS
=7.5 V
T
C
= 125 °C
V
GS
= 10 V
10
0
12
24
36
48
60
0
10
20
30
40
50
I
D
– Drain Current (A)
2nd line
I
D
– Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
6500
5200
3900
2600
1300
0
10000
1000
100
10
8
10000
1000
100
I
D
= 10 A
V
DS
= 125 V
6
C
iss
4
C
rss
2
C
oss
10
0
10
0
50
100
150
200
250
0
12
24
36
48
60
V
DS
– Drain-to-Source Voltage (V)
2nd line
Q
g
– Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM10250E
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
3.5
2.8
2.1
1.4
0.7
0
10000
1000
100
100
10
10000
1000
100
I
D
= 15 A
V
GS
= 10 V
T
J
= 150 °C
1
V
GS
= 7.5 V
0.1
0.01
T
J
= 25 °C
10
10
-50 -25
0
25 50 75
100 125 150 175
0
0.2
0.5
0.7
1.0
1.2
T
J
– Junction Temperature (°C)
2nd line
V
SD
– Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.7
0.2
0.150
0.120
0.090
0.060
0.030
0.000
10000
1000
100
-0.3
-0.8
-1.3
-1.8
I
D
= 5 mA
T
J
= 125°C
I
D
= 250 μA
T
J
= 25 °C
10
-50 -25
0
25 50 75
100 125 150 175
0
2
4
6
8
10
T
J
– Temperature (°C)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
322
I
D
= 1 mA
310
298
286
274
262
-50 -25
0
25 50 75
100 125 150 175
T
J
– Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM10250E
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1000
10000
1000
I
DM
limited
100
10
1
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
(1)
Limited by R
DS(on)
100
0.1
T
C
= 25 °C
Single pulse
0.01
0.01
BVDSS limited
10 100
10
1000
0.1
1
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM10250E
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
Document Number: 91000
1
