Vishay-Intertech-SQM120P06-07L-GE3
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SQM120P06-07L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
– 60
R
DS(on)
(
) at V
GS
= – 10 V
R
DS(on)
(
) at V
GS
= – 4.5 V
0.0067
0.0088
– 120
• AEC-Q101 Qualified
d
I
D
(A)
• Material categorization:
For definitions of compliance please see
Configuration
Single
TO-263
S
G
G
D
S
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-263
SQM120P06-07L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
– 60
V
Gate-Source Voltage
V
GS
20
– 120
– 98
T
C
= 25 °C
a
T
C
= 125 °C
Continuous Drain Current
a
I
D
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
– 120
– 480
– 80
A
I
DM
I
AS
E
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
320
mJ
W
375
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
125
Operating Junction and Storage Temperature Range
T
J
, T
stg
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
0.40
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM120P06-07L
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
V
DS
= V
GS
, I
D
= – 250 μA
– 60
–
–
V
– 1.5
– 2.0
– 2.5
V
DS
= 0 V, V
GS
=
20 V
–
–
–
–
–
–
100
– 1
nA
μA
A
V
GS
= 0 V
V
GS
= 0 V
V
DS
= – 60 V
V
DS
= – 60 V, T
J
= 125 °C
V
DS
= – 60 V, T
J
= 175 °C
V
DS
– 5 V
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
–
– 50
– 250
–
V
GS
= 0 V
–
I
D(on)
V
GS
= – 10 V
– 120
V
GS
= – 10 V
GS
= – 10 V
I
D
= – 30 A
–
–
–
–
–
0.0056 0.0067
V
I
D
= – 30 A, T
J
= 125 °C
I
D
= – 30 A, T
J
= 175 °C
I
D
= – 20 A
–
–
0.0110
0.0130
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= – 10 V
V
GS
= – 4.5 V
0.0070 0.0088
90
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= – 15 V, I
D
= – 30 A
–
S
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
11 423
14 280
V
GS
= 0 V
V
DS
= – 25 V, f = 1 MHz
1034
809
180
31
1295
1015
270
–
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= – 10 V
V
DS
= – 30 V, I
D
= – 110 A
–
nC
–
43
–
f = 1 MHz
1.1
–
2.27
15
3.5
23
t
d(on)
t
r
t
d(off)
t
f
–
23
35
V
DD
= – 30 V, R
L
= 0.27
I
D
– 110 A, V
GEN
= – 10 V, R
g
= 1
ns
–
97
146
48
–
32
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
– 480
– 1.5
A
V
Forward Voltage
V
SD
I
F
= – 100 A, V
GS
= 0 V
– 0.95
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM120P06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
150
120
90
60
30
0
200
160
120
80
V
= 10 V thru 5 V
GS
V
= 4 V
GS
T
= 25 °C
C
40
T
= 125 °C
V
= 3 V
C
GS
T
= – 55 °C
4
C
0
0
1
2
3
5
0
0
0
3
6
9
12
15
80
60
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
200
160
120
80
0.020
0.016
0.012
0.008
0.004
0
T
= – 55 °C
C
T
= 25 °C
C
V
= 4.5 V
GS
V
= 10 V
GS
T
= 125 °C
C
40
0
16
32
48
64
0
20
40
60
80
100
120
I
– Drain Current (A)
D
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
15 000
12 500
10 000
7500
5000
2500
0
10
8
I
= 110 A
D
C
i
ss
V
= 30 V
D
S
6
4
2
C
o
ss
C
r
ss
0
10
20
30
40
50
0
20 40 60 80
100 120 140 160 180 200
V
D
S
– Drain-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Capacitance
Gate Charge
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM120P06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
100
I
= 30 A
D
10
V
= 10 V
GS
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0.01
0.001
– 50
– 25
0
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
25
50
75 100
125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
V
S
D
–
S
ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.9
0.05
0.04
0.03
0.02
0.01
0
I
= 250 μA
D
0.6
I
= 5 mA
D
0.3
0
T
= 150 °C
J
– 0.3
– 0.6
T
= 25 °C
8
J
– 50
– 25
0
25
50
75 100
125 150 175
0
2
4
6
10
T
J
– Temperature (°C)
V
GS
–
G
ate-to-
S
ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
– 60
I
= 10 mA
D
– 64
– 68
– 72
– 76
– 80
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction
T
e
mperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM120P06-07L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
Limited
DM
1000
100
10
Limited by
DS(on)
*
100 µs
R
I
D
Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQM120P06-07L
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-3
-2
-1
-4
10
10
10
1
10
Sq
u
are Wave P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S12-1847-Rev. B, 30-Jul-12
Document Number: 67026
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
