Vishay-Intertech-SQS401ENW-T1-GE3
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SQS401ENW
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
d
PRODUCT SUMMARY
V
DS
(V)
-40
R
DS(on)
(
Ω
) at V
GS
= -10 V
DS(on)
(
Ω
) at V
GS
= -4.5 V
0.029
0.047
• 100 % R
g
and UIS tested
R
• Material categorization:
I
D
(A)
-16
for definitions of compliance please see
Configuration
Package
Single
PowerPAK 1212-8W
S
PowerPAK
®
1212-8W
S
in
g
le
D
8
D
7
D
6
D
5
G
1
S
2
S
D
3
G
P-Channel MOSFET
1
Top View
Bottom View
Marking Code
: Q023
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V
DS
LIMIT
-40
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
-16
Continuous Drain Current
a
I
D
T
C
= 125 °C
-16
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
-16
A
I
DM
I
AS
E
AS
-64
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
-26
L = 0.1 mH
33.8
62.5
20
mJ
W
T
C
= 25 °C
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
e, f
T
J
, T
stg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
81
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
2.4
Notes
a. Package
limited.
b. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
d. Parametric
verification ongoing.
e. See
solder profile (
www.vishay.com/doc?73257
). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework
conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQS401ENW
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= -250 μA
-40
–
–
V
V
DS
= V
GS
, I
D
= -250 μA
-1.5
-2.0
-2.5
V
DS
= 0 V, V
GS
=
20 V
–
–
–
100
-1
nA
μA
A
V
GS
= 0 V
V
DS
= -40 V
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
GS
= 0 V
V
DS
= -40 V, T
J
= 125 °C
V
DS
= -40 V, T
J
= 175 °C
V
DS
≥
5 V
–
-50
V
–
–
-150
–
I
D(on)
V
GS
= -10 V
-20
–
–
V
V
V
GS
= -10 V
GS
= -10 V
GS
= -10 V
I
D
= -12 A
0.020
0.030
0.040
0.035
12
0.029
0.043
0.051
0.047
–
I
D
= -12 A, T
J
= 125 °C
I
D
= -12 A, T
J
= 175 °C
I
D
= -9 A
–
Drain-Source On-State Resistance
a
R
DS(on)
Ω
–
V
GS
= -4.5 V
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= -15 V, I
D
= -7 A
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
1565
245
170
17.7
5.6
1875
295
205
21.2
6.6
9.7
2.8
14
V
GS
= 0 V
V
DS
= -20 V, f = 1 MHz
pF
–
–
Q
gs
Q
gd
R
g
V
GS
= -4.5 V
V
DS
= -20 V, I
D
= -9.3 A
f = 1 MHz
–
nC
–
8.1
1.1
–
1.95
11
Ω
t
d(on)
t
r
t
d(off)
t
f
–
10
13
V
DD
= -20 V, R
L
= 14.2
Ω
ns
I
D
≅
-1.4 A, V
GEN
= -10 V, R
g
= 1
Ω
–
36.5
10.2
44
–
13
Source-Drain Diode Ratings and Characteristic
b
Pulsed Current
a
I
SM
–
–
–
-64
A
V
Forward Voltage
V
SD
I
F
= -8.8 A, V
GS
= 0 V
-0.8
-1.1
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQS401ENW
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
24
18
12
6
30
24
18
12
6
V
GS
= 10 V thru 5 V
V
GS
= 4 V
T
= 25 °C
C
T
C
= 125 °C
V
GS
= 3 V
5
T
C
= -55 °C
4
0
0
0
0
0
1
2
3
5
0
0
0
1
2
3
4
6
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
6
T
C
= -55 °C
T
= 25 °C
C
V
GS
= 4.5 V
T
C
= 125 °C
V
GS
= 10 V
0
6
12
I –
Drain Current (A)
D
18
24
30
4
8
12
16
20
I
– Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
6
5
4
3
2
1
0
2500
2000
1500
1000
500
V
D
S
= 20 V
I
D
= 9.3 A
C
iss
C
oss
C
rss
0
5
10
15
20
25
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
Q
–
T
o
tal Gate Charge (nC)
g
Capacitance
Gate Charge
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQS401ENW
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
I
= 11 A
D
V
GS
= 10 V
T
J
= 150 °C
T
J
= 25 °C
V
= 4.5 V
GS
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150 175
T
J
– Junction
T
e
mperature (°C)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.25
0.20
0.15
0.10
0.05
0.00
1.1
0.8
I
= 250 µA
D
0.5
I
= 5 mA
D
0.2
T
= 150 °C
J
-0.1
-0.4
T
= 25 °C
6
J
0
1
2
3
4
5
7
8
9
10
-50 -25
0
25
50 75
100 125 150 175
T –
T
e
mperature (°C)
J
V
– Gate-to-Source Voltage (V)
GS
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
-40
I
= 1 mA
D
-42
-44
-46
-48
-50
-50 -25
0
25
50
75 100
125 150 175
T
J
– Junction
T
e
mperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQS401ENW
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
DM
Limited
100
10
I
D
Limited
*
100 μ
s
1 m
s
Limited by R
D
S
(on)
10 m
s
100 m
s
, 1
s
,
10
s
, DC
1
BVD
SS
Limited
0.1
0.01
T
C
= 25 °C
S
ingle Pul
s
e
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
DM thJA
3. T
– T
= P
Z
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SQS401ENW
Vishay Siliconix
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
Single P
u
lse
0.05
0.02
0.01
-4
-3
-2
-1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S15-1309-Rev. A, 09-Jun-15
Document Number: 67977
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
PowerPAK
®
1212-8W Case Outline
L
E2
E4
K
H
A2
W
8
7
1
2
3
4
1
2
3
4
Z
2
6
5
L1
E3
Back
s
ide view of
s
ingle pad
θ
θ
A1
Notes
1 Inch
will govern
2 Dimen
s
ion
s
exclu
s
ive of mold gate burr
s
3 Dimen
s
ion
s
exclu
s
ive of mold fla
s
h and
cutting burr
s
2
E1
E
Detail Z
MILLIMETERS
NOM.
1.04
INCHES
DIM.
MIN.
0.97
0
MAX.
1.12
0.05
0.13
0.41
0.33
3.40
3.15
2.24
MIN.
0.038
0
NOM.
0.041
MAX.
0.044
0.002
0.005
0.016
0.013
0.134
0.124
0.088
A
A1
A2
b
–
–
0
–
0
–
0.23
0.23
3.20
2.95
1.98
0.30
0.009
0.009
0.126
0.116
0.078
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D4
D5
E
3.05
0.120
2.11
0.083
0.47 typ.
2.3 typ.
3.30
0.0185 typ.
0.090 typ.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 typ.
0.65 BSC.
0.86 typ.
0.41
0.013 typ.
0.026 BSC
0.034 typ.
0.016
K
H
0.30
0.30
0.06
0°
0.51
0.56
0.20
12°
0.012
0.012
0.002
0°
0.020
0.022
0.008
12°
L
0.43
0.017
L1
0.13
0.005
–
–
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Revision: 16-Nov-15
Document Number: 64614
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
