Vishay-Intertech-SUD09P10-195-GE3
| Part # | Vishay-Intertech-SUD09P10-195-GE3 |
Download  | Vishay-Intertech-SUD09P10-195-GE3 |
SUD09P10-195
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
– 8.8
– 8.5
Q
g
(Typ.)
Definition
0.195 at V
GS
= – 10 V
0.210 at V
GS
= – 4.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
– 100
11.7
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Power Switch
•
DC/DC Converters
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information:
SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
– 100
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
T
C
= 70 °C
– 8.8
– 7.1
– 15
– 18
16.2
Continuous Drain Current (T
J
= 150 °C)
I
D
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
E
AS
L = 0.1 mH
T
C
= 25 °C
mJ
W
32.1
b
2.5
Maximum Power Dissipation
a
P
D
T
A
= 25 °C
c
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Symbol
Limit
50
Unit
R
thJA
°C/W
R
thJC
Junction-to-Case (Drain)
3.9
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1″ square PCB (FR-4 material).
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
1
SUD09P10-195
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 100
– 1
V
Gate Threshold Voltage
Gate-Body Leakage
– 2.5
250
– 1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 100
V
,
V
GS
= 0 V
DS
= – 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
DS
= – 100
V
,
V
GS
= 0
V
,
T
J
= 150 °C
V
DS
≤
– 10
V
,
V
GS
= – 10 V
I
DSS
V
V
Zero Gate Voltage Drain Current
– 50
– 250
µA
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
– 15
A
Ω
S
V
GS
= – 10
V
,
I
D
= – 3.6 A
0.162
0.175
12
0.195
0.210
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
V
GS
= – 4.5
V
,
I
D
= – 3.4 A
V
DS
= – 15
V
,
I
D
= – 3.6 A
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1055
65
V
GS
= 0
V
,
V
DS
= – 50
V
, f = 1
M
Hz
pF
41
V
DS
= – 50
V
,
V
GS
= – 10
V
,
I
D
= – 3.6 A
23.2
11.7
3.5
4.8
5.7
7
34.8
17.6
T
o
tal Gate Charge
c
Q
g
nC
Ω
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
Q
gs
Q
gd
R
g
V
DS
= – 50
V
,
V
GS
= – 4.5
V
,
I
D
= – 3.6 A
f = 1 MHz
1.2
11.5
14
t
d(on)
t
r
t
d(off)
t
f
12
18
V
DD
= – 50
V
,
R
L
= 17.2
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
– 2.9 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
33
50
9
18
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
– 8.8
– 15
– 1.5
75
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= – 2.9 A, V
GS
= 0 V
– 0.8
50
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= – 2.9 A, dI/dt = 100 A/µs
– 4
– 6
98
147
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
0.30
0.25
0.20
0.15
0.10
V
= 10 V thru 5 V
GS
V
= 4 V
GS
12
9
V
= 4.5 V
GS
6
V
= 10 V
GS
V
= 3 V
GS
3
0
0
0
0
1
2
3
4
0
0
0
3
6
9
12
15
10
25
V
– Drain-to-Source Voltage (V)
DS
I
– Drain Current (A)
D
Output Characteristics
On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
0.60
0.45
0.30
0.15
0.00
T
T
= 150 °C
= 25 °C
J
J
T
= 25 °C
C
T
= 125 °C
C
T
= – 55 °C
C
1
2
3
4
2
4
6
8
V
– Gate-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
GS
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
10
8
I
= 3.6 A
D
T
= – 55 °C
C
V
= 50 V
DS
T
= 25 °C
6
C
V
= 25 V
DS
4
T
= 125 °C
C
V
= 80 V
DS
2
0
0
3
6
9
12
15
5
10
15
20
I
– Drain Current (A)
D
Q
–
T
o
tal Gate Charge (nC)
g
Transconductance
Gate Charge
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
3
SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
– 1.1
– 1.4
– 1.7
– 2.0
– 2.3
T
= 150 °C
I
= 250 μA
J
D
10
T
= 25 °C
J
1
0.1
0.0
– 50
– 25
0
25
50
75
100 125 150
0.3
0.6
0.9
1.2
V
– Source-to-Drain Voltage (V)
T
–
T
e
mperature (°C)
SD
J
Threshold Voltage
Source-Drain Diode Forward Voltage
– 100
– 106
– 112
– 118
– 124
– 130
1600
1200
800
400
0
C
iss
I
= 250 μA
D
C
oss
C
rss
– 50
– 25
0
25
50
75
100 125 150
0
20
V
40
60
80
100
T
J
– Junction
T
e
mperature (°C)
Drain Source Breakdown vs. Junction Temperature
– Drain-to-Source Voltage (V)
DS
Capacitance
2.1
1.7
1.3
0.9
0.5
10
V
= 10 V
GS
I
= 3.6 A
D
8
6
4
2
0
V
= 4.5 V
GS
– 50
– 25
0
T
25
50
75
100 125 150
0
25
50
75
100
125
150
– Junction
T
e
mperature (°C)
J
T
– Case
T
e
mperature (°C)
C
On-Resistance vs. Junction Temperature
Current Derating
4
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
100
Limited by R
*
DS(on)
10
100 μs
1 ms
T
J
= 25 °C
T
J
= 150 °C
1
10
10 ms
100 ms
1 s, 10 s, DC
T
= 25 °C
0.1
A
Single Pulse
BVDSS Limited
10
0.01
1
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
0.1
1
100
V
– Drain-to-Source Voltage (V)
DS
Time (s)
* V
> minimum V
at which R
is specified
GS
GS
DS(on)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
5
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
E1
Notes
Dimension L3 is for reference only.
•
Revision: 16-May-16
Document Number: 71197
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
