Vishay-Intertech-SUD19P06-60-GE3
| Part # | Vishay-Intertech-SUD19P06-60-GE3 |
Download  | Vishay-Intertech-SUD19P06-60-GE3 |
SUD19P06-60
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ)
I
D
(A)
d
Definition
0.060 at V
GS
= – 10 V
0.077 at V
GS
= – 4.5 V
– 19
•
•
T
r
enchFET
®
Power MOSFET
100 % UIS
T
e
sted
– 60
26
– 16.8
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
High Side Switch for Full Bridge Converter
•
DC/DC Converter for LCD Display
TO-252
S
G
Drain Connected to
T
a
b
G
D
S
T
o
p
V
ie
w
D
P-Channel MOSFET
Orderin
g
Information:
SUD19P06-60-E3 (Lead (P
b
)-free)
SUD19P06-60-GE3 (Lead (P
b
)-free and Halogen free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise note)
A
Parameter
Symbol
Limit
– 60
Unit
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
V
20
T
C
= 25 °C
– 18.3
– 8.19
– 30
Continuous Drain Current (T
J
= 150 °C)
I
D
T
C
= 125 °C
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current, Single Pulse
– 22
L = 0.1 mH
Repetitive Avalanche Energy, Single Pulse
a
E
AS
24.2
mJ
W
38.5
c
2.3
b, c
T
C
= 25 °C
T
A
= 25 °C
P
D
Power Dissipation
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
Maximum
Unit
t
10 s
Steady State
17
45
21
55
Maximum Junction-to-Ambient
b
°C/W
R
thJC
Maximum Junction-to-Case
2.7
3.25
Notes:
a. Duty cycle
1 %.
b. When mounted on 1″ square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T
C
= 25 °C.
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
1
This document is subject to change without notice.
SUD19P06-60
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise note)
J
Parameter
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 60
– 1
V
V
Gate Threshold Voltage
Gate-Body Leakage
– 3
100
– 1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 60
V
,
V
GS
= 0 V
I
DSS
V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
a
– 50
– 125
µA
A
V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 150 ° C
V
DS
– 5
V
,
V
GS
= – 10 V
I
D(on)
– 30
V
GS
= – 10
V
,
I
D
= – 10 A
0.048
0.060
0.102
0.120
0.077
V
GS
= – 10
V
,
I
D
= – 10 A, T
J
= 125 °C
GS
= – 10
V
,
I
D
= – 10 A, T
J
= 150 °C
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
V
V
GS
= – 4.5
V
,
I
D
= – 5 A
0.061
22
g
fs
V
DS
= – 15
V
,
I
D
= – 10 A
S
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1140
130
90
26
4.5
7
1710
40
V
GS
= 0
V
,
V
DS
= – 25
V
, f = 1
M
Hz
pF
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Q
gs
Q
gd
R
g
V
DS
= – 30
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
f = 1 MHz
nC
Gate Resistance
7
T
u
rn-On Delay Time
c
t
d(on)
t
r
t
d(off)
t
f
8
15
15
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
V
DD
= – 30
V
,
R
L
= 3
I
D
– 19 A, V
GEN
= – 10
V
,
R
g
= 2.5
9
ns
65
30
100
45
Drain-Source Body Diode and Characteristics
(T
C
= 25 °C)
b
I
S
I
SM
V
SD
t
rr
Continuous Current
Pulsed Current
– 30
– 30
– 1.5
61
A
Forward Voltage
a
I
F
= – 19 A, V
GS
= 0 V
– 1
41
V
I
F
= – 19 A, di/dt = 100 A/µs
Reverse Recovery Time
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
This document is subject to change without notice.
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
= 10 thr
u
5
V
4
V
T
= 125 °C
C
3
V
25 °C
– 55 °C
0
0
0
0
0
2
4
6
8
10
30
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
DS
Output Characteristics
Transfer Characteristics
35
30
25
20
15
10
5
0.12
0.10
0.0
8
0.06
0.04
0.02
0.00
T
= – 55 °C
25 °C
C
125 °C
V
GS
= 4.5
V
V
GS
= 10
V
0
5
10
15
20
25
0
5
10
15
20
25
30
I –
Drain C
u
rrent (A)
D
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
Transconductance
On-Resistance vs. Drain Current
1
8
00
1500
1200
900
600
300
0
20
16
12
8
V
D
= 30
V
DS
= 10 A
I
C
iss
4
C
oss
C
rss
0
10
20
30
40
50
0
10
20
30
40
50
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Q
–
T
o
tal Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
3
This document is subject to change without notice.
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
1.9
I
D
= 10 A
V
GS
= 10
V
1.6
1.3
1.0
0.7
0.4
10
T =
150 °C
J
T =
25 °C
J
1
– 50
– 25
0
25
50
75
100 125 150
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T
– J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
25
20
15
10
5
100
10
1
Limited
b
y r
*
DS(on)
100 ms
1 s
10 s
DC
0.1
B
V
DSS Limited
T
= 25 °C
0.01
C
Single P
u
lse
0.001
0
0.1
1
10
100
1000
0
25
50
75
100
125
150
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
T
– Case
T
e
mperature (°C)
C
*
V
GS
minim
u
m
V
at
w
hich r
is specified
GS
DS(on)
Maximum Drain Current
vs. Case Temperature
Safe Operating Area
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
S
qu
are
W
a
v
e P
u
lse D
u
ration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
This document is subject to change without notice.
SUD19P06-60
Vishay Siliconix
THERMAL RATINGS
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
– 2
-1
10
10
10
10
1
10
100
S
qu
are
W
a
v
e P
u
lse D
u
ration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
5
This document is subject to change without notice.
Package Information
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
2.18
–
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.01
0.040
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
E1
Notes
Dimension L3 is for reference only.
•
Revision: 16-May-16
Document Number: 71197
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
