Vishay-Intertech-SUM110P04-04L-E3
| Part # | Vishay-Intertech-SUM110P04-04L-E3 |
Download  | Vishay-Intertech-SUM110P04-04L-E3 |
SUM110P04-04L
Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
d
-110
• Low thermal resistance
0.0042 at V
GS
= -10 V
0.0062 at V
GS
= -4.5 V
-40
• Material categorization:
-110
For definitions of compliance please see
TO-263
S
G
S
D
P-Channel MOSFET
D
Top View
Ordering Information:
SUM110P04-04L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-40
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
-110
-110
-240
-75
Continuous Drain Current (T
J
= 175 °C)
d
I
D
T
C
= 125 °C
A
Pulsed Drain Current
I
DM
I
AS
Avalanche Current
Single Pulse Avalanche Energy
a
L = 0.1 mH
E
AS
281
mJ
W
T
C
= 25 °C
375
c
Power Dissipation
P
D
T
A
= 25 °C
b
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient PCB Mount
b
SYMBOL
R
thJA
LIMIT
40
UNIT
°C/W
Junction-to-Case
R
thJC
0.4
Notes
a. Duty
cycle
1 %.
b. When
mounted on 1″ square PCB (FR-4 material).
c. See
SOA curve for voltage derating.
d. Limited
by package.
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SUM110P04-04L
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
-40
-1
V
-3
100
-1
V
DS
= 0 V, V
GS
=
20 V
nA
V
DS
= -40 V, V
GS
= 0 V
DS
= -40 V, V
GS
= 0 V, T
J
= 125 °C
DS
= -40 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= -5 V, V
GS
= -10 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
V
-50
-250
μA
A
I
D(on)
-120
V
GS
= -10 V, I
D
= -30 A
0.0034
0.005
0.0042
0.0063
0.0076
0.0062
V
GS
= -10 V, I
D
= -30 A, T
J
= 125 °C
GS
= -10 V, I
D
= -30 A, T
J
= 175 °C
Drain-Source On-State Resistance
a
R
DS(on)
V
V
GS
= -4.5 V, I
D
= -20 A
Forward Transconductance
a
Dynamic
b
g
fs
V
DS
= -15 V, I
D
= -30 A
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
C
iss
C
oss
C
rss
Q
g
11 200
1650
1200
235
45
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
pF
350
Q
gs
Q
gd
R
g
V
DS
= -20 V, V
GS
= -10 V, I
D
= -110 A
nC
65
3
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
t
d(on)
t
r
t
d(off)
t
f
25
40
45
30
V
DD
= -20 V, R
L
= 0.18
I
D
-110 A, V
GEN
= -10 V, R
g
= 2.5
ns
190
110
300
165
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
Continuous Current
I
S
I
SM
-110
-240
-1.5
100
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= -85 A, V
GS
= 0 V
-1
65
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= -85 A, dI/dt = 100 A/μs
-3.7
0.12
-5.6
0.28
μC
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
240
200
160
120
80
200
V
GS
= 10 V thru 5 V
175
150
125
100
75
4 V
T
= 125 °C
C
50
25 °C
40
25
3 V
–
55 °C
0
0
0
0
0
2
4
6
8
10
90
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
–
Drain-to-Source Voltage (V)
V
GS
–
Gate-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
0.010
0.008
0.006
0.004
0.002
0.000
240
200
160
120
80
T
=
–
55 °C
C
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
40
0
0
20
40
60
80
100
120
15
30
45
60
75
I
D
–
Drain Current (A)
I
D
–
Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
14 000
12 000
10 000
8000
6000
4000
2000
0
20
16
12
8
C
iss
V
D
= 20 V
DS
= 110 A
I
C
oss
4
C
rss
0
5
10
15
20
25
30
35
0
50 100
150 200 250 300 350 400 450
V
DS
–
Drain-to-Source Voltage (V)
Q
–
Total Gate Charge (nC)
g
Capacitance
Gate Charge
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
100
V
D
= 10 V
GS
= 30 A
I
T =
25 °C
J
T =
150 °C
J
10
0.5
–
1
0.0
0.3
0.6
0.9
1.2
50
–
25
0
25
50
75 100
125 150 175
V
SD
– Source-to-Drain Voltage (V)
T –
Junction
T
e
mperature (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
48
46
44
42
40
38
I
D
= 250 µA
100
10
1
I
(A) at T
= 25 °C
A
AV
I
AV
(A) at T
= 150 °C
A
0.1
–
50
–
25
0
25
50
75 100
125 150 175
0.0001
0.001
0.01
0.1
1
10
T
– Junction
T
e
mperature (°C)
t
in
(s)
J
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
SUM110P04-04L
THERMAL RATINGS
Vishay Siliconix
1000
300
250
200
150
100
50
Limited by R
*
DS(on)
10 µs
100 µs
100
10
1 ms
Limited
by Package
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Case
Temperature
(
°
C)
* V
> minimum V
at which R
is specified
C
GS
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
Duty Cycle = 0.5
0.2
1
Notes:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
Single Pulse
2. Per Unit Base = R
= 62.5 °C/W
thJA
(t)
3.
T
JM
–
T =
P
Z
A
DM thJA
4. Surface Mounted
0.01
–
3
10
–
2
10
–
4
1
10
–
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
S13-2478-Rev. D, 09-Dec-13
Document Number: 72437
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
