Vishay-Intertech-SUM110P04-05-E3
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SUM110P04-05
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
I
D
(A)
a
V
DS
(V)
r
DS(on)
(
Ω
)
Q
g
(Typ.)
RoHS
0.005 at V
GS
= – 10 V
– 40
– 110
185 nC
COMPLIANT
TO-263
S
G
Drain Connected to
T
a
b
G
D
S
T
o
p View
D
Ordering Information:
SUM110P04-05-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
– 40
20
V
V
GS
– 110
a
– 110
a
39
b, c
T
C
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
J
= 175 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
33
b, c
A
I
DM
I
S
Pulsed Drain Current
240
T
C
= 25 °C
T
A
= 25 °C
110
Continuous Source-Drain Diode Current
10
b, c
75
I
AS
Avalanche Current
L = 0.1 mH
T
C
= 25 °C
E
AS
Single-Pulse Avalanche Energy
281
375
262
mJ
W
T
C
= 70 °C
A
= 25 °C
P
D
Maximum Power Dissipation
15
b, c
T
10.5
b, c
– 55 to 175
260
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
R
thJA
t
≤
10 s
8
10
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Steady State
0.33
0.4
Notes:
a. Package limited.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
1
SUM110P04-05
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 40
V
V
DS
T
e
mperature Coefficient
– 40
– 5.5
– 3
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
– 2
– 4
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 40
V
,
V
GS
= 0 V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= – 10 V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
V
– 10
I
D(on)
r
DS(on)
g
fs
– 120
A
Ω
S
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
V
GS
= – 10
V
,
I
D
= – 20 A
0.0041
75
0.005
V
DS
= – 15
V
,
I
D
= – 20 A
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
11300
1510
1000
185
48
V
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
280
Q
gs
Q
gd
R
g
V
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 110 A
f = 1 MHz
Gate-Source Charge
nC
Gate-Drain Charge
42
Gate Resistance
4.0
Ω
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
25
40
440
165
55
Rise Time
290
110
35
V
DD
= – 20
V
,
R
L
= 0.18
Ω
ns
I
D
≅
– 110 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 20 A
– 110
– 240
– 1.5
105
A
– 0.8
70
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
130
37
200
I
F
= – 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
33
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
200
40
30
20
10
0
V
GS
= 10 thru 7 V
6 V
160
120
80
40
0
5 V
25 °C
– 55 °C
T
C
= 125 °C
4 V
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
0.008
16000
14000
12000
10000
8000
6000
4000
2000
0
C
iss
0.006
0.004
0.002
0.000
V
GS
= 10 V
C
oss
C
rss
0
20
40
60
80
100
120
0
10
20
30
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.5
1.2
0.9
0.6
10
8
I
= 20 A
D
V
= 10 V
GS
V
DS
= 20 V
6
V
DS
= 32 V
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
40
80
120
160
200
240
Q
g
–
T
o
tal Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
3
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.05
0.04
0.03
0.02
0.01
0.00
100
T
J
= 150 °C
10
T
A
= 150 °C
T
= 25 °C
J
T
A
= 25 °C
1
0.0
0
1
2
3
4
5
6
7
8
9
10
0.3
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.1
0.9
35
30
I
D
=10 mA
0.7
25
20
15
10
0.5
0.3
0.1
T
= 25 °C
C
– 0.1
– 0.3
– 0.5
5
0
– 50
– 25
0
25
50
75 100
125 150 175
0.0001 0.001
0.01
0.1
1.00
10
100 1000
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by r
*
DS(on)
10 µ
s
100 µ
s
100
10
1
1 ms
10 ms
100 ms
DC
Single Pulse
= 25 °C
T
C
1
10
100
0.1
V
DS
– Drain-to-Source Voltage (V)
*V >
minimum V
GS
at which r
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Case
4
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
240
210
180
150
120
90
400
350
300
250
200
150
100
50
Package Limited
60
30
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
– Case
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Max. Avalanche and Drain Current
vs. Case Temperature*
Power Derating, Junction-to-Case
1
0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
5
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
