Vishay-Intertech-SUM65N20-30-E3
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SUM65N20-30
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
V
(BR)DSS
(V)
r
DS(on)
(
Ω
)
I
D
(A)
65
a
RoHS
0.030 at V
GS
= 10 V
200
COMPLIANT
Low Thermal Resistance Package
100 % R
g
Tested
APPLICATIONS
•
Isolated DC/DC Converters
D
TO-263
G
G
D S
Top View
S
Ordering Information:
SUM65N20-30-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
200
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
65
a
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
37
a
140
35
T
C
= 125 °C
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
L = 0.1 mH
T
C
= 25 °C
E
AS
61
mJ
W
375
c
3.75
Maximum Power Dissipation
b
P
D
T
A
= 25 °C
d
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mount (TO-263)
d
R
thJA
Junction-to-Ambient
°C/W
R
thJC
Junction-to-Case (Drain)
0.4
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1″ square PCB (FR-4 material).
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
1
SUM65N20-30
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
200
2
V
Gate-Threshold Voltage
Gate-Body Leakage
4
V
DS
= 0
V
,
V
GS
=
20 V
100
1
nA
V
DS
= 200
V
,
V
GS
= 0 V
DS
= 200
V
,
V
GS
= 0
V
,
T
J
= 125 °C
DS
= 200
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
r
DS(on)
g
fs
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
a
50
250
µA
A
120
25
V
GS
= 10
V
,
I
D
= 30 A
0.023
0.030
0.063
0.084
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Ω
S
V
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5100
480
210
90
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
130
Q
gs
Q
gd
R
g
V
DS
= 100
V
,
V
GS
= 10
V
,
I
D
= 85 A
23
nC
34
0.5
1.7
24
3.3
35
Ω
t
d(on)
t
r
t
d(off)
t
f
220
45
330
70
V
DD
= 100
V
,
R
L
= 1.5
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
65 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
200
300
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
65
140
1.5
200
12
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 65 A, V
GS
= 0 V
1.0
130
8
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
0.52
1.2
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
140
140
120
100
80
V
GS
= 10 thru 7 V
6 V
120
100
80
60
40
20
0
60
T
= 125 °C
40
C
5 V
4 V
25 °C
3
20
– 55 °C
6
0
0
2
4
6
8
10
0
1
2
4
5
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
180
150
120
90
0.060
0.045
0.030
0.015
0.000
T
= – 55 °C
25 °C
C
V
GS
= 10 V
125 °C
60
30
0
0
20
40
I
60
80
100
120
0
20
40
60
80
100
120
– Drain Current (A)
I
D
– Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
D
= 100 V
DS
= 65 A
I
C
iss
4
C
rss
C
oss
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
3
SUM65N20-30
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
10
1
V
D
= 10 V
GS
= 30 A
I
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
T –
Junction Temperature
(
°
C)
J
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
240
230
220
210
200
190
180
I
D
= 1.0 mA
I
(A) at T
= 25 °C
A
AV
10
1
I
AV
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T –
Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
4
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
SUM65N20-30
Vishay Siliconix
THERMAL RATINGS
1000
75
r
DS(on)
Limited*
60
45
30
15
0
10 µs
100
10
100 µs
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
– Drain-to-Source Voltage (V)
DS
T
– Ambient Temperature
(
°
C)
C
* V
>
minimum V
at which r
is specified
GS
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 71702
S-80272-Rev. D, 11-Feb-08
5
Package Information
Vishay Siliconix
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
e
A
b2
b
c
Detail “A”
E2
M
M
A
0.010
PL
2
INCHES
MIN.
MILLIMETERS
MIN.
DIM.
A
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
Revison: 30-Sep-13
Document Number: 71198
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
