Vishay-Intertech-SUP57N20-33-E3
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SUP57N20-33
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
V
(BR)DSS
(V)
r
DS(on)
(
Ω
)
I
D
(A)
A
v
aila
b
le
•
0.033 at V
GS
= 10 V
200
57
RoHS*
COMPLIANT
APPLICATIONS
•
Isolated DC/DC converters
– Primary-Side Switch
TO-220AB
D
DRAIN connected to TAB
G
G D S
Top View
S
Ordering Information:
SUP57N20-33
SUP57N20-33-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
200
20
V
V
GS
T
C
= 25 °C
57
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
33
A
I
DM
I
AS
Pulsed Drain Current
140
35
Avalanche Current
Single Pulse Avalanche Energy
a
E
AS
L = 0.1 mH
T
C
= 25 °C
61
mJ
W
300
b
3.75
Maximum Power Dissipation
a
P
D
T
A
= 25 °C
c
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Symbol
Limit
40
Unit
R
thJA
°C/W
R
thJC
Junction-to-Case (Drain)
0.5
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1″ square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may appl
y
.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
1
SUP57N20-33
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
200
2
V
Gate-Threshold Voltage
Gate-Body Leakage
4
V
DS
= 0
V
,
V
GS
=
20 V
100
1
nA
V
DS
= 160
V
,
V
GS
= 0 V
DS
= 160
V
,
V
GS
= 0
V
,
T
J
= 125 °C
DS
= 160
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
r
DS(on)
g
fs
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
a
50
250
µA
A
120
25
V
GS
= 10
V
,
I
D
= 30 A
0.027
0.033
0.069
0.093
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Ω
S
V
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5100
480
210
90
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
nC
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
T
u
rn-On Delay Time
c
Rise Time
c
130
Q
gs
Q
gd
t
d(on)
t
r
V
DS
= 100
V
,
V
GS
= 10
V
,
I
D
= 85 A
23
34
24
35
330
70
220
45
V
DD
= 100
V
,
R
L
= 1.5
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
65 A, V
GEN
= 10
V
,
R
G
= 2.5
Ω
t
d(off)
t
f
200
300
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
I
S
I
SM
Continuous Current
65
140
1.5
200
12
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 65 A, V
GS
= 0 V
1.0
130
8
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
0.52
1.2
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
140
120
100
80
140
V
GS
= 10 thru 7 V
6 V
120
100
80
60
40
20
0
60
T
= 125 °C
C
40
5 V
4 V
20
25 °C
– 55 °C
6
0
0
1
2
3
4
5
7
0
2
4
6
8
10
V
GS
– Gate-to-Source
Voltage (V)
V
DS
– Drain-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
180
150
120
90
0.060
0.045
0.030
0.015
0.000
T
= – 55 °C
25 °C
C
V
GS
= 10 V
125 °C
60
30
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
– Drain
Current (A)
I
D
– Drain
Current (A)
Transconductance
On-Resistance vs. Drain Current
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
D
= 100 V
DS
= 65 A
I
C
iss
4
C
rss
C
oss
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
V
DS
– Drain-to-Source
Voltage (V)
Q
–
T
o
tal
Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
3
SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
V
D
= 10 V
GS
= 30 A
I
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
10
1
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
T
– Junction
Temperature (°C)
J
V
SD
– Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
240
230
220
210
200
190
180
1000
100
I
D
= 1.0 mA
I
(A) at T
= 25 °C
A
AV
10
1
I
AV
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
T
– Junction
Temperature (°C)
J
t
in
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
4
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
SUP57N20-33
Vishay Siliconix
THERMAL RATINGS
60
50
40
30
20
10
0
1000
Limited
DS(on)
by r
10 µs
100 µs
1 ms
100
10
10 ms, 100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
T
– Ambient Temperature (°C)
C
V
DS
– Drain-to-Source
Voltage (V)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
– 4
– 3
– 2
– 1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
