Vishay-Intertech-VS-10RIA120
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VS-10RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 10 A
FEATURES
• Improved
glass passivation for high reliability
and exceptional stability at high temperature
• High dI
F
/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
TO-48 (TO-208AA)
PRIMARY CHARACTERISTICS
I
T(AV)
10 A
• Material
categorization: for definitions of compliance
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
1.75 V
60 mA
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
-65 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
10
85
A
°C
A
I
T(AV)
T
C
I
T(RMS)
25
50 Hz
60 Hz
50 Hz
60 Hz
225
I
TSM
A
240
255
I
2
t
A
2
s
233
V
DRM
/V
RRM
100 to 1200
110
V
t
q
Typical
μs
°C
T
J
-65 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE
(1)
V
PEAK VOLTAGE
(2)
V
10
20
100
200
150
300
20
40
400
500
VS-10RIA
60
600
700
10
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with t
p
5 ms
(2)
Revision: 21-Sep-17
Document Number: 93689
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-10RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
VALUES
10
UNITS
A
°C
A
Maximum average on-state current
at case temperature
I
T(AV)
85
Maximum RMS on-state current
I
T(RMS)
25
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
225
240
190
200
255
233
180
165
2550
1.10
1.39
No voltage
reapplied
Maximum peak, one-cycle
I
TSM
A
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
=T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
A
2
s
100 % V
RRM
reapplied
Maximum I
2
t for fusing
I
2
t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
A
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
V
Low level value of
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
24.3
16.7
on-state slope resistance
m
High level value of
on-state slope resistance
(I >
x I
T(AV)
), T
J
= T
J
maximum
Maximum on-state voltage
Maximum holding current
Typical latching current
V
TM
I
H
I
pk
= 32 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
1.75
130
200
V
T
J
= 25 °C, anode supply 12 V resistive load
mA
I
L
SWITCHING
PARAMETER
V
DRM
600 V
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
, t
p
= 6 μs, t
r
= 0.1 μs maximum
TM
= (2 x rated dI/dt) A
V
DRM
800 V
V
DRM
1000 V
V
DRM
1600 V
180
Maximum rate of rise
of turned-on current
dI
F
/dt
A/μs
160
I
150
Typical turn-on time
t
gt
t
rr
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C
0.9
T
J
= T
J
maximum,
Typical reverse recovery time
4
I
TM
= I
T(AV)
, t
p
> 200 μs, dI
F
/dt = – 10 A/μs
μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI
F
/dt = – 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
Typical turn-off time
t
q
110
Note
•
t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
100
300
(1)
UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
V/μs
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90
Revision: 21-Sep-17
Document Number: 93689
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-10RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
T
J
= T
J
maximum
W
P
G(AV)
I
GM
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= -65 °C
A
V
-V
GM
90
DC gate current required to trigger
I
GT
T
J
= 25 °C
60
mA
Maximum required gate trigger
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
T
J
= 125 °C
T
J
= -65 °C
35
3.0
2.0
1.0
2.0
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
T
J
= 25 °C
V
T
J
= 125 °C
T
J
= T
J
maximum, V
DRM
= Rated value
mA
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
T
J
= T
J
maximum,
DRM
= Rated value
DC gate voltage not to trigger
V
GD
0.2
V
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction and
storage temperature range
T
J
, T
Stg
-65 to +125
1.85
°C
Maximum thermal resistance,
junction to case
R
thJC
R
thCS
DC operation
K/W
Maximum thermal resistance,
case to heat sink
Mounting surface, smooth, flat and greased
0.35
TO NUT
TO DEVICE
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf
in
kgf · m
N · m
g
Lubricated threads
Mounting torque
(Non-lubricated threads)
14
0.49
TO-48 (TO-208AA)
Approximate weight
Case style
oz.
See dimensions – link at the end of datasheet
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.44
0.53
0.68
1.01
1.71
0.32
0.56
0.75
1.05
1.73
120°
90°
60°
30°
T
J
= T
J
maximum
K/W
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93689
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-10RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
10RIA Series
thJC
10RIA Series
thJC
R
(DC) = 1.85 K/W
R
(DC) = 1.85 K/W
Conduction Angle
Conduction Period
80
80
30°
30°
60°
60°
70
70
90°
90°
120°
180°
120°
180°
60
60
50
50
DC
40
40
0
2
4
6
8
10 12 14 16 18
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
35
180°
t
h
120°
S
30
A
90°
60°
25
30°
4
5
K
20
15
10
5
RMS Limit
/
W
K
/
W
Conduction Angle
10RIA Series
T =
125°C
J
0
0
2
4
6
8
10 12 14 16
1
0
8
25
50
75
100
125
Maximu
m
A
llowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
60°
30°
2
K
/
W
RMS Limit
Conduction Period
10RIA Series
T =
125°C
J
0
0
5
10
Average On-state Current (A)
Fig. 4 – On-State Power Loss Characteristics
15
20
25
3
0
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Revision: 21-Sep-17
Document Number: 93689
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-10RIA Series
Vishay Semiconductors
240
220
200
180
160
140
120
100
80
200
190
180
170
160
150
140
130
120
110
100
90
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
10RIA Series
10RIA Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
1000
100
10
1
T =
2 5 ° C
J
T =
12 5 ° C
J
10
R
I
A
S
e
ries
0.5
1
1.5
2
2.5
3
3.5
4
In
s
t
antaneousOn-
s
t
ate Voltage (V)
Fig. 7 – Forward Voltage Drop Characteristics
10
Steady State Value
= 1.85 K/W
R
thJC
(DC Operation)
1
10RIA Series
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
Revision: 21-Sep-17
Document Number: 93689
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-10RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 16
W
,
t
p = 4ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
(2) PGM = 30
W
,
t
p = 2ms
(3) PGM = 60
W
,
t
p = 1ms
(4) PGM = 60
W
,
t
p = 1ms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30
%
r
ated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
10
1
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
10RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 10
RIA 120
M
S90
1
2
3
4
5
6
1
2
3
4
–
–
–
–
–
Vishay Semiconductors product
Current code
Essential part number
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = stud base TO-48 (TO-208AA) 1/4
”
28UNF-2A
M = stud base TO-48 (TO-208AA) M6 x 1
5
–
Critical dV/dt:
6
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Sep-17
Document Number: 93689
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-208AA (TO-48)
DIMENSIONS
in millimeters (inches)
C
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)
G
30.2 max.
(0.18 max.)
22.2
max.
.
(0.87
max.
)
12.8
max.
(0.5
max.
)
10.7/11.5
(0.42/0.45)
Note:
A = Anode
C = Cathode
G
=
G
ate
A
1/4″-28UNF-2A
For metric device M6 x 1
Ø 15.5
(Ø 0.61)
13.8/14.3
(0.54/0.56)
Across flats
45°
Revision: 02-Jun-17
Document Number: 95333
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Revision: 01-Jan-2023
Document Number: 91000
1
