Vishay-Intertech-VS-111RKI120MPBF
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VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• High current and high surge ratings
• Hermetic ceramic housing
• Designed and qualified for industrial level
• Material
categorization: for definitions of compliance
TO-94 (TO-209AC)
TYPICAL APPLICATIONS
• DC motor controls
PRIMARY CHARACTERISTICS
• Controlled DC power supplies
I
T(AV)
110 A
• AC controllers
V
DRM
/V
RRM
V
TM
400 V, 800 V, 1200 V
1.57 V
80 mA
I
GT
T
J
-40 °C to +140 °C
TO-94 (TO-209AC)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
110
UNITS
A
I
T(AV)
T
C
90
°C
I
T(RMS)
172
50 Hz
60 Hz
50 Hz
60 Hz
2080
A
I
TSM
2180
21.7
I
2
t
kA
2
s
19.8
V
DRM
/V
RRM
400 to 1200
110
V
t
q
Typical
μs
°C
T
J
-40 to +140
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK VOLTAGE
V
40
80
400
800
500
900
VS-110RKI
VS-111RKI
20
120
1200
1300
Revision: 24-Jan-18
Document Number: 94379
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
I
T(AV)
TEST CONDITIONS
180° conduction, half sine wave
DC at 83 °C case temperature
VALUES
110
UNITS
A
Maximum average on-state current
at case temperature
90
°C
Maximum RMS on-state current
I
T(RMS)
172
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
No voltage
reapplied
A
Maximum peak, one-cycle
I
TSM
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
kA
2
s
100 % V
RRM
reapplied
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
0.82
1.02
2.16
1.70
1.57
200
V
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
m
V
r
t2
V
TM
I
H
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
Maximum holding current
T
J
= 25 °C, anode supply 6 V resistive load
mA
Typical latching current
I
L
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20
, t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
dI/dt
300
A/μs
Gate current 1 A, dI
g
/dt = 1 A/μs
Typical delay time
t
d
t
q
1
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
μs
I
TM
= 50 A, T
J
= T
J
maximum, dI/dt = – 5 A/μs
Typical turn-off time
110
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 25
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum rated V
DRM
/V
RRM
applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
I
RRM
,
20
mA
I
DRM
Revision: 24-Jan-18
Document Number: 94379
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
UNITS
TYP.
MAX.
Maximum peak gate power
P
GM
P
G(AV)
I
GM
12
3.0
3.0
20
W
A
Maximum average gate power
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= – 40 °C
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ V
GM
– V
GM
V
10
180
80
40
2.5
1.6
1
–
120
–
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 140 °C
T
J
= – 40 °C
T
J
= 25 °C
T
J
= 140 °C
mA
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
–
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
2
V
–
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
DRM
anode to
6.0
mA
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
0.25
V
cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
-40 to +140
-40 to +150
0.27
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T
J
°C
T
Stg
R
thJC
R
thCS
DC operation
K/W
Mounting surface, smooth, flat and greased
0.1
15.5
(137)
Non-lubricated threads
N · m
(lbf · in)
Mounting torque,
10 %
14
(120)
Lubricated threads
Approximate weight
Case style
130
g
See dimensions – link at the end of datasheet
TO-94 (TO-209AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.043
0.052
0.066
0.096
0.167
0.031
0.053
0.071
0.101
0.169
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 24-Jan-18
Document Number: 94379
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
140
130
120
110
100
90
140
R
thJC
(DC) = 0.27 K/W
R
thJC
(DC) = 0.27 K/W
130
120
Ø
Ø
Conduction angle
Conduction period
110
100
DC
90
30°
120°
60°
120°
80
70
60°
180°
90°
180°
100
30°
40
90°
80
0
20 40 60 80
100 120 140 160 180
0
20
60
80
120
Average On-
S
tate Current (A)
94379_01
Average On-
S
tate Current (A)
94379_02
Fig. 1 – Current Ratings Characteristics
Fig. 2 – Current Ratings Characteristics
160
140
120
100
80
160
140
120
100
80
180°
120°
90°
60°
30°
RM
S
limit
60
60
Ø
40
40
Conduction angle
20
20
T
J
= 140 °C
0
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
94379_03a
Average On-
S
tate Current (A)
94379_03b
Maximum Allowa
b
le
Am
b
ient Temperature (°C)
Fig. 3 – On-State Power Loss Characteristics
220
200
180
160
140
120
100
80
220
200
180
160
140
DC
180°
120°
90°
60°
30°
RM
S
limit
120
100
80
60
40
20
0
60
Ø
Conduction period
40
20
T
J
= 140 °C
0
0
20 40 60 80
100 120 140 160 180
0
20
40
60
80
100
120
140
94379_04a
Average On-
S
tate Current (A)
94379_04b
Maximum Allowa
b
le
Am
b
ient Temperature (°C)
Fig. 4 – On-State Power Loss Characteristics
Revision: 24-Jan-18
Document Number: 94379
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
2000
1800
1600
1400
1200
1000
800
2500
Maximum non-repetitive
s
urge current
ver
s
u
s
pul
s
e train duration. Control of
conduction may not be maintained.
At any rated load condition and with
rated V
RRM
applied following
s
urge.
Initial T
J
= 140 °C
Initial T
J
= 140 °C
No voltage reapplied
Rated V
RRM
reapplied
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
2000
1500
1000
500
1
10
100
0.01
0.1
1
10
Num
b
er of Equal Amplitu
d
e Half
Pulse Train Duration (s)
94379_05
94379_06
Cycle Current Pulses (N)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
10 000
T
J
= 25 °C
1000
100
10
T
J
= 140 °C
1
0
1
2
3
4
5
Instantaneous On-
S
tate Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
94379_07
1
0.1
S
teady
s
tate value
R
thJC
= 0.27 K/W
(DC operation)
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
94379_08
S
quare Wave Pulse Duration (s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristic
Revision: 24-Jan-18
Document Number: 94379
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-110RKI…Pb
F
,
V
S-111RKI…PbF Series
Vishay Semiconductors
100
10
(1) P
G
M
= 12 W,
t
p
= 5 m
s
(2) P
G
M
= 30 W,
t
p
= 2 m
s
(3) P
G
M
= 60 W,
t
p
= 1 m
s
Rectangular gate pul
s
e
(a) Recommended load line for
rated dI/dt: 20 V, 30
Ω
,
t
r
≤ 0.5 μ
s
, t
p
≥ 6 μ
s
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40
Ω
,
t
r
≤ 1 μ
s
, t
p
≥ 6 μ
s
(4) P
G
M
= 200 W,
t
p
= 300 μ
s
(a)
(b)
1
(1)
(2)
(3)
(4)
V
G
D
Fre
q
uency limited by P
G
(AV)
I
G
D
0.1
0.001
0.01
0.1
1
10
100
1000
94379_09
Instantaneous
G
ate Current (A)
Fig. 9 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 11
0
RKI 120
M
PbF
1
2
3
4
5
6
7
1
2
3
–
–
–
Vishay Semiconductors product
I
T(AV)
rated average output current (rounded/10)
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
Thyristor
4
5
6
–
–
–
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = stud base1/2
“-20UNF-2A threads
M = stud base metric threads M12 x 1.75 E 6
7
–
None = standard production
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 24-Jan-18
Document Number: 94379
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for 110RKI and 111RKI Series
DIMENSIONS
in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
) MIN.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37
Flexible lead
20 (0.79) MIN.
C.S. 16 mm
2
(0.025 s.i.)
C.S. 0.4 mm
2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Fast-on terminals
Red shrink
55 (2.16)
MIN.
AMP. 280000-1
REF-250
White shrink
24 (0.94)
MAX.
Ø 22.5 (0.88) MAX.
10 (0.39) MAX.
21 (0.83)
MAX.
SW 27
1/2″-20UNF-2A
29.5 (1.16) MAX.
Note
•
For metric device: M12 x 1.75 contact factory
Document Number: 95363
Revision: 25-Sep-08
1
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Revision: 01-Jan-2023
Document Number: 91000
1
