Vishay-Intertech-VS-22RIA40
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VS-22RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
TO-48 (TO-208AA)
PRIMARY CHARACTERISTICS
• Material
categorization: for definitions of compliance
I
T(AV)
22 A
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
V
DRM
/V
RRM
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
V
TM
I
GT
T
J
1.70 V
60 mA
-65 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
22
85
A
°C
A
I
T(AV)
T
C
I
T(RMS)
35
50 Hz
60 Hz
50 Hz
60 Hz
400
I
TSM
A
420
793
I
2
t
A
2
s
724
V
DRM
/V
RRM
100 to 1200
110
V
t
q
Typical
μs
°C
T
J
-65 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE
(1)
V
PEAK VOLTAGE
(2)
V
AT T
J
= T
J
MAXIMUM
mA
10
20
100
200
150
300
20
40
400
500
VS-22RIA
60
600
700
10
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with t
p
5 ms
(2)
Revision: 21-Sep-17
Document Number: 93700
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-22RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES
22
UNITS
A
°C
A
Maximum average on-state current
at case temperature
I
T(AV)
85
Maximum RMS on-state current
I
T(RMS)
35
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
355
793
724
560
515
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
A
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
=T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
A
2
s
100 % V
RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
7930
A
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.83
0.95
V
Low level value of
on-state slope resistance
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
14.9
13.4
m
High level value of
on-state slope resistance
(I >
x I
T(AV)
), T
J
= T
J
maximum
Maximum on-state voltage
Maximum holding current
Latching current
V
TM
I
H
I
pk
= 70 A, T
J
= 25 °C
1.70
130
200
V
T
J
= 25 °C, anode supply 6 V, resistive load
mA
I
L
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
V
DRM
600 V
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
, t
p
= 6 μs, t
r
= 0.1 μs maximum
TM
= (2 x rated dI/dt) A
V
DRM
800 V
V
DRM
1000 V
V
DRM
1600 V
180
Maximum rate of rise
of turned-on current
dI/dt
A/μs
160
I
150
Typical turn-on time
t
gt
t
rr
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C
0.9
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs,
dI/dt = – 10 A/μs
Typical reverse recovery time
Typical turn-off time
4
μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = – 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
t
q
110
Note
•
t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
100
UNITS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
Maximum critical rate of rise
of off-state voltage
dV/dt
V/μs
300
(1)
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
Revision: 21-Sep-17
Document Number: 93700
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-22RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
T
J
= T
J
maximum
W
P
G(AV)
I
GM
2.0
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= – 65 °C
1.5
A
V
-V
GM
10
90
DC gate current required to trigger
I
GT
T
J
= 25 °C
60
mA
Maximum required gate trigger
T
J
= 125 °C
T
J
= – 65 °C
T
J
= 25 °C
T
J
= 125 °C
35
3.0
2.0
1.0
2.0
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
V
I
GD
T
J
= T
J
maximum, V
DRM
= Rated value
Maximum gate current/voltage
mA
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
T
J
= T
J
maximum,
DRM
= Rated value
DC gate voltage not to trigger
V
GD
0.2
V
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
T
J
, T
Stg
-65 to +125
0.86
°C
and storage temperature range
Maximum thermal resistance,
junction to case
R
thJC
R
thCS
DC operation
K/W
Maximum thermal resistance,
case to heat sink
Mounting surface, smooth, flat and greased
0.35
TO NUT
TO DEVICE
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf
in
kgf · m
N · m
g
Lubricated threads
Mounting torque
(Non-lubricated threads)
14
0.49
TO-48 (TO-208AA)
Approximate weight
Case style
oz.
See dimensions – link at the end of datasheet
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
180°
120°
90°
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93700
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-22RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
22RIA Series
thJC
22RIA Series
thJC
R
(DC) = 0.86 K/W
R
(DC) = 0.86 K/W
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
30
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
80
80
0
5
10
15
20
25
0
10
20
40
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
40
R
180°
35
30
25
20
15
10
5
120°
90°
60°
30°
=
1
K
/
W
–
D
e
RMS Limit
l
t
a
R
5K
/
W
Conduction Angle
22RIA Series
T =
125°C
J
0
0
5
Average On-state Current (A)
Fig. 2 – On-State Power Loss Characteristics
10
15
20
205
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
60°
30°
RMS Limit
Conduction Period
22RIA Series
T =
125°C
J
0
0
5
10 15 20 25 30
3
05
25
Maximum Allowable Ambient Temperature (°C)
Fig. 3 – On-State Power Loss Characteristics
50
75
100
125
Average On-state Current (A)
Revision: 21-Sep-17
Document Number: 93700
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-22RIA Series
Vishay Semiconductors
400
375
350
325
300
275
250
225
200
175
150
375
350
325
300
275
250
225
200
175
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
22RIA Series
22RIA Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 – Maximum Non-Repetitive Surge Current
Fig. 5 – Maximum Non-Repetitive Surge Current
1000
100
10
T =
25°C
J
T =
125°C
J
22RIA Series
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 6 – Forward Voltage Drop Characteristics
1
Steady State Value
= 0.86 K/W
R
thJC
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 7 – Thermal Impedance Z
thJC
Characteristics
Revision: 21-Sep-17
Document Number: 93700
5
For technical questions within your region:
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-22RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 16W,
tp = 4ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
(2) PGM = 30W,
tp = 2ms
(3) PGM = 60W,
tp = 1ms
(4) PGM = 60W,
tp = 1ms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30
%
r
ated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
10
1
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
22RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 22
RIA 120
M
S90
1
2
3
4
5
6
1
2
3
4
5
–
–
–
–
–
Vishay Semiconductors product
Current code
Essential part number
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = stud base TO-48 (TO-208AA) 1/4
”
28UNF-2A
M = stud base TO-48 (TO-208AA) M6 x 1
–
Critical dV/dt:
6
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Sep-17
Document Number: 93700
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-208AA (TO-48)
DIMENSIONS
in millimeters (inches)
C
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)
G
30.2 max.
(0.18 max.)
22.2
max.
.
(0.87
max.
)
12.8
max.
(0.5
max.
)
10.7/11.5
(0.42/0.45)
Note:
A = Anode
C = Cathode
G
=
G
ate
A
1/4″-28UNF-2A
For metric device M6 x 1
Ø 15.5
(Ø 0.61)
13.8/14.3
(0.54/0.56)
Across flats
45°
Revision: 02-Jun-17
Document Number: 95333
1
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
