Vishay-Intertech-VS-25RIA40M
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VS-25RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 25 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
TO-208AA (TO-48)
PRODUCT SUMMARY
• Material
categorization: For definitions of compliance
Package
Diode variation
I
T(AV)
TO-208AA (TO-48)
Single SCR
25 A
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
V
DRM
/V
RRM
100 V to 1200 V
1.70 V
V
TM
I
GT
60 mA
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
T
J
-65 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
25
85
A
°C
A
I
T(AV)
I
T(RMS)
I
TSM
T
C
40
50 Hz
60 Hz
50 Hz
60 Hz
420
A
440
867
I
2
t
A
2
s
790
V
DRM
/V
RRM
100 to 1200
110
V
t
q
Typical
μs
°C
T
J
-65 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
V
RSM
, MAXIMUM NON-REPETITIVE
I
DRM
/I
RRM
MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE
(1)
V
PEAK VOLTAGE
(2)
V
AT T
J
= T
J
MAXIMUM
mA
20
10
20
100
200
150
300
40
400
500
VS-25RIA
60
600
700
10
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with t
p
5 ms
(2)
Revision: 11-Mar-14
Document Number: 93701
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES
25
UNITS
A
°C
A
Maximum average on-state current
at case temperature
I
T(AV)
85
Maximum RMS on-state current
I
T(RMS)
40
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
420
440
350
370
867
790
615
560
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
A
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
A
2
s
100 % V
RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
8670
A
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
0.99
1.40
V
Low level value of
on-state slope resistance
r
t1
r
t2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
10.1
5.7
m
High level value of
on-state slope resistance
(I >
x I
T(AV)
), T
J
= T
J
maximum
Maximum on-state voltage
Maximum holding current
Latching current
V
TM
I
H
I
pk
= 79 A, T
J
= 25 °C
1.70
130
200
V
T
J
= 25 °C, anode supply 6 V, resistive load
mA
I
L
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
V
DRM
600 V
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
, t
p
= 6 μs, t
r
= 0.1 μs maximum
TM
= (2 x rated dI/dt) A
V
DRM
800 V
V
DRM
1000 V
V
DRM
1600 V
180
Maximum rate of rise
of turned-on current
dI/dt
A/μs
160
I
150
Typical turn-on time
t
gt
t
rr
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C
0.9
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs,
dI/dt = – 10 A/μs
Typical reverse recovery time
4
μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = – 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
Typical turn-off time
t
q
110
Note
•
t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
100
Maximum critical rate of rise
of off-state voltage
dV/dt
V/μs
300
(1)
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90
Revision: 11-Mar-14
Document Number: 93701
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
T
J
= T
J
maximum
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
W
P
G(AV)
I
GM
2.0
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= – 65 °C
1.5
A
V
-V
GM
10
90
DC gate current required to trigger
I
GT
T
J
= 25 °C
60
mA
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
T
J
= 125 °C
T
J
= – 65 °C
T
J
= 25 °C
T
J
= 125 °C
35
3.0
2.0
1.0
2.0
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
V
I
GD
T
J
= T
J
maximum, V
DRM
= Rated value
Maximum gate current/voltage
mA
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
T
J
= T
J
maximum,
V
DRM
= Rated value
DC gate voltage not to trigger
V
GD
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
and storage temperature range
T
J
, T
Stg
– 65 to 125
°C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
0.75
0.35
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased
Non-lubricated threads
3.4
+ 0 – 10 %
(30)
N · m
(lbf
in)
Allowable mounting torque
23
+ 0 – 10 %
(20)
Lubricated threads
14
g
Approximate weight
Case style
0.49
oz.
See dimensions – link at the end of datasheet
TO-208AA (TO-48)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.17
0.21
0.27
0.40
0.69
0.13
0.22
0.30
0.42
0.70
180°
120°
90°
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 93701
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25RIA Series
Vishay Semiconductors
130
120
110
100
90
130
120
110
100
90
25RIA Series
25RIA Series
thJC
R
(DC) = 0.75 K/W
R
(DC)
=
0
.75 K/W
thJC
Conduction Period
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
80
80
0
10
20
30
40
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 1 – Current Ratings Characteristics
45
180°
t
h
40
S
120°
A
90°
35
60°
30°
3
30
K
/
W
25
4
RMS Limit
K
/
W
20
Conduction Angle
15
10
5
25RIA Series
T =
125°C
J
0
0
5
10
15
20
25
300
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 2 – On-State Power Loss Characteristics
60
55
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
60°
2
K
30°
/
W
RMS Limit
5
Conduction Period
25RIA Series
K
/
W
T =
125°C
J
0
0
5
10 15 20 25 30 35
4
00
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 93701
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25RIA Series
Vishay Semiconductors
450
425
400
375
350
325
300
275
250
225
200
175
150
375
350
325
300
275
250
225
200
175
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Conditio
n
A
nd With
Rated V
Applied Following Surge.
RRM
Initial T
= 125°C
J
Initial T
= 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
25RIA Series
25RIA Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 – Maximum Non-Repetitive Surge Current
Fig. 5 – Maximum Non-Repetitive Surge Current
1000
25RIA Series
100
10
1
T =
25°C
J
T =
125°C
J
0.5
1
1.5
2
2.5
Instantaneous On-state Voltage (V)
Fig. 6 – Forward Voltage Drop Characteristics
1
Steady State Value
= 0.75 K/W
R
thJC
(DC Operation)
0.1
25RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 7 – Thermal Impedance Z
thJC
Characteristics
Revision: 11-Mar-14
Document Number: 93701
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25RIA Series
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 16W,
tp = 4ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
(2) PGM = 30W,
tp = 2ms
(3) PGM = 60W,
tp = 1ms
(4) PGM = 60W,
tp = 1ms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30
%
r
ated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
10
1
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
25RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 – Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 25
RIA 120
M
S90
1
2
3
4
5
6
1
2
3
4
5
–
–
–
–
–
Vishay Semiconductors product
Current code
Essential part number
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = Stud base TO-208AA (TO-48) 1/4
”
28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
–
Critical dV/dt:
6
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 11-Mar-14
Document Number: 93701
6
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-208AA (TO-48)
DIMENSIONS
in millimeters (inches)
Ø 1.7/1.8
(Ø 0.06/0.07)
Ø 3.9/4.1
(Ø 0.15/0.16)
30.2 MAX.
(0.18 MAX.)
22.2 MAX.
(0.87 MAX.)
12.8 MAX.
(0.5 MAX.)
10.7/11.5
(0.42/0.45)
1/4″-28UNF-2A
For metric device M6 x 1
Ø 15.5
(Ø 0.61)
13.8/14.3
(0.54/0.56)
Across flats
45°
Document Number: 95333
Revision: 07-Jul-08
1
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time.
All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) – recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards.
Please note that some Vishay documentation may still make reference
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We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
