Vishay-Intertech-VS-25TTS12S-M3
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VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
• Meets
MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Anode
2, 4
• Designed
and
qualified
according
JEDEC
®
-JESD 47
2
• Material
categorization: for definitions of
1
1
3
3
Cathode Gate
APPLICATIONS
D
2
PAK (TO-26
3
AB)
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRIMARY CHARACTERISTICS
I
T(AV)
16 A
V
DRM
/V
RRM
800 V, 1200 V
1.25 V
DESCRIPTION
The VS-25TTS…S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
V
TM
I
GT
45 mA
T
J
-40 to +125 °C
D
2
PAK (TO-263AB)
Single SCR
Package
Circuit configuration
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
5.5
A
Aluminum IMS, R
thCA
= 15 °C/W
8.5
13.5
25.0
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
16.5
Note
T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
•
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
16
UNITS
I
T(AV)
Sinusoidal waveform
A
I
RMS
25
V
RRM
/V
DRM
800 to 1200
350
V
A
I
TSM
V
T
16 A, T
J
= 25 °C
1.25
V
dV/dt
dI/dt
T
J
500
V/μs
A/μs
°C
150
-40 to +125
VOLTAGE RATINGS
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
I
RRM
/I
DRM
,
AT 125 °C
mA
PART NUMBER
VS-25TTS08S-M3
VS-25TTS12S-M3
800
800
10
1200
1200
Revision: 30-Nov-2021
Document Number: 96414
1
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
A
TYP. MAX.
Maximum average on-state current
Maximum RMS on-state current
I
T(AV)
I
RMS
T
C
= 93 °C, 180° conduction half sine wave
16
25
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
300
350
450
630
6300
1.25
12.0
1.0
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
I
2
t
Maximum I
2
t for fusing
A
2
s
Maximum I
2
√
t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I
2
√
t
V
TM
r
t
A
2
√
s
V
m
Ω
V
T
J
= 125 °C
V
T(TO)
T
J
= 25 °C
0.5
Maximum reverse and direct leakage current
Holding current
I
RM
/I
DM
V
R
= rated V
RRM
/V
DRM
T
J
= 125 °C
10
Anode supply = 6 V,
VS-25TTS08,
mA
I
H
resistive load, initial I
T
= 1 A,
VS-25TTS12
–
150
T
J
= 25 °C
Maximum latching current
I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
– k = open
200
500
150
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
dV/dt
dI/dt
V/μs
A/μs
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
W
P
G(AV)
+ I
GM
2.0
1.5
A
V
– V
GM
10
Anode supply = 6 V, resistive load, T
J
= – 10 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= – 10 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
60
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
I
GT
45
mA
20
2.5
V
GT
2.0
V
1.0
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GD
I
GD
0.25
2.0
T
J
= 125 °C, V
DRM
= rated value
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
t
gt
t
rr
t
q
T
J
= 25 °C
0.9
4
μs
T
J
= 125 °C
110
Revision: 30-Nov-2021
Document Number: 96414
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +125
°C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
1.1
40
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
(1)
R
thJA
2
g
Approximate weight
Marking device
0.07
oz.
25TTS08S
25TTS12S
Case style D
2
PAK (TO-263AB)
Note
When mounted on 1″ square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
(1)
130
120
110
100
90
25
20
15
10
5
180°
120°
90°
R
(DC) = 1.1 °C/ W
thJC
60°
30°
Conduction Angle
RM S Lim it
30°
60°
Conduction Angle
90°
10
120°
180°
15
T = 125°C
J
0
0
5
20
0
4
8
12
16
20
Aver
a
ge On-
s
t
ate Current (A)
Average On-
s
t
ate Current (A)
Fig. 1 – Current Rating Characteristics
Fig. 3 – On-State Power Loss Characteristics
130
120
110
100
90
35
DC
R
(DC) = 1.1 °C
/
W
thJC
180°
120°
90°
30
25
20
15
10
5
60°
30°
Conduction
P
e
riod
RM S L
i
m it
Conduction
P
e
riod
90°
120°
60°
10
T =
125°C
J
DC
25
30°
180°
20
0
80
0
5
15
30
0
5
10
15
20
25
30
Aver
a
ge On-
s
t
ate Current (A)
Average On-
s
t
ate Cu
r
rent (A)
Fig. 2 – Current Rating Characteristics
Fig. 4 – On-State Power Loss Characteristics
Revision: 30-Nov-2021
Document Number: 96414
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
400
350
300
250
200
150
At Any
R
a
ted
L
o
ad Condit
i
o
n And With
Maximum Non
R
e
petitive
S
u
r
g
e Current
Ver
s
u
s
P
u
l
s
e T
r
a
i
n Dur
a
t
i
o
n. Control
R
a
ted V
Appl
i
e
d
F
o
l
lowing
S
u
rge.
RRM
Initi
a
l T =
1
25°C
Of Condu
c
t
ion May Not
B
e
M
a
i
nt
a
i
ned.
J
350
300
250
200
150
100
Initi
a
l T =
1
25°C
J
at 60
Hz 0.0083 s
at 50
Hz 0.0100 s
No Voltage
R
e
app
l
i
e
d
R
a
ted V
RRM
R
e
app
l
ied
0.01
0.1
P
u
l
s
e
T
r
a
in Dura
t ion
(
s
)
1
1
10
100
Numbe
r
O
f
E
q
ual Amp
l
itude
H
a
lf Cy
c
l
e Current
P
u
l
s
e
s(
N
)
Fig. 5 – Maximum Non-Repetitive Surge Current
Fig. 6 – Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
1
0
1
2
3
4
5
I
n
s
t
antaneousOn
–
s
t
ate Vo
l
t
age (V)
Fig. 7 – On-State Voltage Drop Characteristics
Revision: 30-Nov-2021
Document Number: 96414
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
10
S
t
eady
S
t
ate Value
(DC Oper
a
t
i
o
n)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Si n g l e Pu
l
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
S
q
u
a
r
e W
a
v
e Pul
s
e
D
uration (
s
)
Fig. 8 – Gate Characteristics
100
10
1
R
e
ctangu
l
a
r gate pul
s
e
(1)
P
G
M = 40 W, tp = 1 ms
(2)
P
G
M = 20 W, tp = 2 ms
(3)
P
G
M = 8 W, tp = 5 ms
(4)
P
G
M = 4 W, tp = 10 ms
a)
R
e
commended
l
o
ad
l
ine for
r
a
ted di
/
dt:
1
0 V, 20
o
hms
tr = 0.5 µ
s
,
t
p >= 6 µs
b
)
R
e
commended load line for
<= 30
%
r
ated d
i
/
dt:
1
0 V, 65 ohms
tr =
1
µ
s
,
t
p >= 6 µs
(
a
)
(b)
(2)
(
3
)
(1)
(
4
)
V
G
D
I
G
D
F
r
e
quency
L
i
mited by
P
G
(AV)
10 100
0.1
0.001
0.01
0.1
1
In
s
t
a
n
taneous Gate Current (A)
Fig. 9 – Thermal Impedance Z
thJC
Characteristics
Revision: 30-Nov-2021
Document Number: 96414
5
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-25TTS08S-M3, VS-25TTS12S-M3 Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
25
T
T
S
12
S
TRL -M3
1
2
3
4
5
6
7
8
9
1
–
–
–
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration:
T = single thyristor
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
2
3
4
5
–
–
08 = 800 V
12 = 1200 V
S = standard recovery rectifier
Voltage rating: voltage code x 100 = V
RRM
S = surface mountable
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
6
7
8
–
–
–
–
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
ORDERING INFORMATION
(Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-25TTS08S-M3
50
800
800
50
VS-25TTS08STRL-M3
VS-25TTS08STRR-M3
VS-25TTS12S-M3
13″ diameter plastic tape and reel
13″ diameter plastic tape and reel
Antistatic plastic tubes
VS-25TTS12STRL-M3
VS-25TTS12STRR-M3
800
800
13″ diameter plastic tape and reel
13″ diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
Revision: 30-Nov-2021
Document Number: 96414
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
D
2
PAK
DIMENSIONS
in millimeters and inches
Conforms to JEDEC
®
outline D
2
P
AK (
S
MD-220)
B
A
Pad layout
A
(E)
(2)(3)
E
A
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.3
8
)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.
8
1
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.0
8
)
A
B
2.64 (0.103)
2.41 (0.096)
2 x
b
2
2 x
b
C
(3)
E1
c
View A – A
0.004 M
0.010 M
M
B
A
2 x
e
Base
Metal
Plating
(4)
b
1,
b
3
H
Gauge
plane
(4)
c1
(c)
B
0° to
8
°
L
Seating
plane
L3
A1
(
b
,
b
2)
Lead tip
L4
Detail “A”
Section B – B and C – C
Scale: None
Rotated 90 °CW
Scale:
8
:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
–
15.88
2.79
1.65
1.78
0.575
0.070
–
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inches
Outline conforms to JEDEC
®
outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
1
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
