Vishay-Intertech-VS-2N5207
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VS-2N681, VS-2N5205 Series
Vishay Semiconductors
Phase Control Thyristor RMS SCRs, 25 A, 35 A
FEATURES
• General purpose stud mounted
• Broad forward and reverse voltage range –
through 1200 V
• Material
categorization: for definitions of
TO-48 (TO-208AA)
PRIMARY CHARACTERISTICS
I
T(AV)
16 A, 22 A
I
T(RMS)
25 A, 35 A
25 V, 50 V, 100 V, 150 V, 200 V, 250 V,
300 V, 400 V, 500 V, 600 V, 700 V, 800 V,
1000 V 1200 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
2.3 V
60 mA
-40 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
VALUES
2N681-92
16
(1)
VALUES
PARAMETER
TEST CONDITIONS
UNITS
2N5205-07
22
(1)
-40 to +40
35
A
°C
A
I
T(AV)
I
T(RMS)
I
TSM
T
C
-65 to +65
(1)
25
50 Hz
60 Hz
50 Hz
60 Hz
145
150
(1)
285
300
(1)
A
103
410
I
2
t
A
2
s
94
375
I
GT
40
40
100
(1)
mA
V/μs
A/μs
V
dV/dt
dI/dt
V
DRM
V
RRM
T
J
–
75 to 100
25 to 800
25 to 800
-65 to +125
(1)
100
Range
Range
600 to 1200
600 to 1200
-40 to +125
(1)
V
°C
Note
(1)
JEDEC
®
registered value
Revision: 21-Sep-17
Document Number: 93706
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE)
V
RRM
/V
DRM
, MAXIMUM REPETITIVE PEAK
REVERSE AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE (t
p
< 5 ms)
V
TYPE NUMBER
T
J
VS-2N681
VS-2N682
VS-2N683
VS-2N684
VS-2N685
VS-2N686
VS-2N687
VS-2N688
VS-2N689
VS-2N690
VS-2N691
VS-2N692
VS-2N5205
VS-2N5206
VS-2N5207
25
50
35
75
100
150
200
250
300
400
500
600
700
800
800
1000
1200
150
200
300
350
400
500
600
720
840
960
960
1200
1440
-65 °C to +125 °C
-40 °C to +125 °C
Note
•
JEDEC registered values
ABSOLUTE MAXIMUM RATINGS
VALUES
2N681-92
VALUES
2N5205-07
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
16
(1)
22
(1)
A
°C
A
Maximum average on-state
current at case temperature
I
T(AV)
180° half sine wave conduction
-65 to +65
(1)
-40 to +40
(1)
Maximum RMS on-state current
I
T(RMS)
25
35
50 Hz half cycle sine wave
or 6 ms rectangular pulse
Following any rated
load condition, and
with rated V
RRM
applied
following surge
145
285
60 Hz half cycle sine wave
or 5 ms rectangular pulse
150
(1)
170
300
(1)
340
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
A
50 Hz half cycle sine wave
or 6 ms rectangular pulse
Same conditions as
above except with
V
RRM
applied following
60 Hz half cycle sine wave
or 5 ms rectangular pulse
180
103
94
355
410
375
surge = 0
t = 10 ms
Rated V
RRM
applied
following surge,
initial T
J
= 125 °C
Maximum I
2
t capability for fusing
t = 8.3 ms
I
2
t
A
2
s
Maximum I
2
t capability for
individual device fusing
V
RRM
= 0 following
t = 10 ms
t = 8.3 ms
145
135
580
530
surge, initial T
J
= 125 °C
Maximum I
2
t capability for
individual device fusing
t = 0.1 ms to 10 ms, initial T
J
< 125 °C
RRM
applied following surge = 0
T
J
= 25 °C, I
T(AV)
= 16 A (50 A peak) 2N681,
T(AV)
= 22 A (70 A peak) 2N5204
I
2
t
(2)
V
TM
I
H
1450
2
(1)
5800
A
2
s
V
V
Maximum peak on-state voltage
Maximum holding current
2.3
(1)
I
20 at 25 °C
(typical)
200
(1)
at
-40 °C
Anode supply 24 V, initial I
T
= 1.0 A
mA
Notes
(1)
JEDEC registered value
I
2
t for time t
x
= I
2
t ·
t
x
(2)
Revision: 21-Sep-17
Document Number: 93706
2
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
SWITCHING
VALUES
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
2N681-92 2N5205-07
V
DM
= 25 V to 600 V
T
C
= 125 °C, V
DM
= Rated V
DRM
,
100
75
–
–
I
TM
= 2 x dI/dt, gate pulse = 20 V,
15
, t
p
= 6 μs, t
r
= 0.1 μs maximum
V
DM
= 700 V to 800 V
Maximum non-repetitive
rate of rise of turned-on
current
Per JEDEC standard RS-397, 5.2.2.6
dI/dt
A/μs
T
C
= 125 °C, V
DM
= 600 V, I
TM
= 200 A at
400 Hz maximum, gate pulse = 20 V, 15
,
t
p
= 6 μs, t
r
= 0.1 μs maximum
–
100
1
Per JEDEC standard RS-397, 5.2.2.6
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A
DC resistive circuit, gate pulse = 10 V,
40
source, t
p
= 6 μs, t
r
= 0.1 μs
Typical delay time
t
d
1
μs
BLOCKING
VALUES
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
2N681-92 2N5205-07
T
J
= 125 °C, exponential
to 100 % rated V
DRM
100
100
(1)
(typical)
Minimum critical rate of
rise of off-state voltage
Gate open
circuited
dV/dt
V/μs
T
J
= 125 °C, exponential
to 67 % rated V
DRM
250
250
(typical)
V
RRM
, V
DRM
= 400 V
3.5
3.5
2.5
2.2
2
–
–
V
RRM
, V
DRM
= 500 V
V
RRM
, V
DRM
= 600 V
3.3
–
Maximum reverse
leakage current
I
DRM
I
RRM
,
V
V
RRM
, V
DRM
= 700 V
RRM
, V
DRM
= 800 V
T
J
= 125 °C
mA
2.5
2
V
RRM
, V
DRM
= 1000 V
–
V
RRM
, V
DRM
= 1200 V
–
1.7
Note
(1)
JEDEC registered value
TRIGGERING
VALUES
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
2N681-92 2N5205-07
t
p
< 5 ms for 2N681 series;
t
p
< 500 μs for 2N5204 series
Maximum peak gate power
P
GM
5
(1)
60
(1)
W
Maximum average gate power
P
G(AV)
+I
GM
0.5
(1)
2
(1)
10
(1)
5
(1)
0.5
(1)
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
2
–
5
(1)
A
V
+V
GM
-V
GM
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
T
C
= min.
rated value
80
(1)
80
(1)
Maximum required DC gate
current to trigger
I
GT
mA
T
T
C
= 25 °C
40
18.5
30
40
20
30
C
= 125 °C
Typical DC gate current to trigger
T
C
= 25 °C, + 6 V anode to cathode
Maximum required gate trigger voltage
T
C
= -65 °C
is the lowest value which will trigger all
units with + 6 V anode to cathode
3
(1)
3
(1)
Maximum required DC gate
voltage to trigger
V
GT
V
V
T
T
C
= 25 °C
2
2
Typical DC gate voltage to trigger
C
= 25 °C, + 6 V anode to cathode
1.5
1.5
Maximum gate voltage not to trigger is
Maximum DC gate voltage
not to trigger
the maximum value which will not
trigger any unit with rated V
DRM
anode
to cathode
V
GD
T
C
= 125 °C
0.25
(1)
0.25
(1)
Note
(1)
JEDEC registered value
Revision: 21-Sep-17
Document Number: 93706
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES
VALUES
PARAMETER
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
UNITS
2N681-92
2N5205-07
Operating junction and
storage temperature range
-65 to 125
(1)
-40 to 125
(1)
°C
Maximum internal thermal resistance,
junction to case
DC operation
1.5
1.5
(1)
0.35
°C/W
Typical thermal resistance,
case to sink
R
thCS
Mounting surface, smooth, flat and greased
0.35
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
lbf · in
kgf · cm
N · m
lbf · in
kgf · cm
N · m
g
Lubricated threads
(Non-lubricated threads)
to nut
Mounting torque
10 %
to device
Lubricated threads
0.29
2.8
14
14
Approximate weight
Case style
0.49
0.5
oz.
TO-48 (TO-208AA)
Note
(1)
JEDEC registered value
200
10
2
180
160
Ø
4
140
Conduction Period
S
inu
s
oidal Current Waveform
120
100
T
J
= 125 °C
10
4
80
60
40
T
J
= 125 °C
T
J
= 25 °C
1.0
4
+180°
+30° +60° +90°
+120°
DC
20
0
10
-1
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20 22 24
Instantaneous On-
S
tate Voltage (V)
Average On-
S
tate Current Over Full Cycle (A)
Fig. 1 – Maximum Allowable Case Temperature
vs. Average On-State Current,
2N681 Series
Fig. 2 – Maximum On-State Voltage vs. Current,
2N681 Series
Revision: 21-Sep-17
Document Number: 93706
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
70
60
50
40
30
10
T
J
= 125 °C
S
inu
s
oidal
Current
Maximum Allowable
In
s
tantaneou
s G
ate
Power Di
ss
ipation
+60° +120°
+90° +180°
DC
9
8
+30°
Waveform
5.0 W
7
Controlled
Rectifier
T
u
rned
6
Area of Certain Triggering
5
Area of All Po
ss
ible
T
r
iggering Point
s
Fully On
4
3
20
10
0
Ø
2
Conduction Angle
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12 16 20 24 28
32 36
Average On-
S
tate Current Over Full Cycle (A)
Instantaneous
G
ate Current (A)
Fig. 5 – Gate Characteristics,
2N681 Series
Fig. 3 – Maximum Low Level On-State Power Loss vs.
Current (Sinusoidal Current Waveform),
2N681 Series
10
4
T
J
= 125 °C
S
inu
s
oidal Current Waveform
DC
4
3
2
+180°
+120°
+90°
+60°
+30°
Controlled Rectifier
T
u
rned Fully On
10
3
4
-65 °C
10
2
4
25 °C
1
0
10
4
125 °C
Ø
V
G
D
(Max.) = 0.25 V
Conduction Angle
10
2
10
3
1.0
1.0
4
10
4
4
0
25
50
75
100
125
Average On-
S
tate Current Over Full Cycle (A)
G
ate Current (mA)
Fig. 4 – Maximum High Level On-State Power Loss vs. Current
(Sinusoidal Current Waveform),
Fig. 5a – Area of All Possible Triggering Points vs. Temperature,
2N681 Series
2N681 Series
10
-1
4
1.0
4
10
4
10
2
4
10
3
4
10
4
10
1
4
Free Convection
Forced Convection at 1000 LFM
Infinite Heat
s
ink
1.0
1.0
4
Mounted on Infinite Heat
s
ink
and 4″ x 4″ x 1/16″ Copper Fin
4
Long Time Duration
s
10
-1
4
10
-1
4
S
hort Time Duration
s
10
-2
10
-1
10
-2
10
-6
4
10
-5
4
10
-4
4
10
-3
4
10
-2
4
t –
S
quare Wave Pulse Duration (s)
Fig. 6 – Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration,
2N681 Series
Revision: 21-Sep-17
Document Number: 93706
5
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
90
At Any Maximum Rated Load Condition
DC
And With Rated V
RRM
Applied Following
S
urge
80
150
+30°
70
60
50
40
30
+60°
+90°
+120°
+180°
100
50
60 Hz
50 Hz
Ø
Conduction Angle
S
inu
s
oidal Current Waveform
T
J
= 125 °C
20
10
0
Controlled Rectifier Turned Fully On
0
0
2
4
6 8
10
20
40 60
0
5
10 15 20 25 30 35 40 45 50
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Average On-
S
tate Current Over Full Cycle (A)
Fig. 7 – Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses,
Fig. 10 – Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
2N681 Series
10
2
5
10
4
5
140
+30°
+60°
+90°
120
100
80
Ø
+30°
+60°
+90°
Conduction Period
S
inu
s
oidal Current Waveform
+120°
+180°
DC
2
2
T
J
= 125 °C
10
3
5
+120°
+180°
DC
+30°
10
5
DC
+60°
+90°
+120°
+180°
60
T
J
= 125 °C
40
Ø
2
2
Conduction Angle
S
inu
s
oidal Current
Waveform
20
0
Controlled Rectifier
T
u
rned Fully On
1.0
1.0
10
2
2
5
10
2
5
10
2
2
5
10
3
0
4
8
12 16
20 24 28 32
36 40
Average On-
S
tate Current Over Full Cycle (A)
Average On-
S
tate Current Over Full Cycle (A)
Fig. 8 – Maximum Allowable Case Temperature vs. Average
On-State Current (Sinusoidal Current Waveform),
2N5205 Series
Fig. 11 – Maximum High-Level On-State Power Loss vs.
Average On-State Current (Sinusoidal Current Waveform),
2N5205 Series
140
90
80
120
Ø
Conduction Period
Rectangular Current
Waveform
T
J
= 125 °C
70
+60°
100
80
60
50
40
30
+90°
+120°
+180°
DC
60
Ø
40
Conduction Period
Rectangular Current Waveform
T
J
= 125 °C
20
+60°
+90°
+120°
+180°
20
0
DC
10
0
Controlled Rectifier Turned Fully On
0
5
10 15 20 25 30 35 40 45 50
0
4
8
12 16
20 24 28 32
36 40
Average On-
S
tate Current Over Full Cycle (A)
Average On-
S
tate Current Over Full Cycle (A)
Fig. 9 – Maximum Allowable Case Temperature vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Fig. 12 – Maximum Low-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Revision: 21-Sep-17
Document Number: 93706
6
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DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
10
2
5
10
3
4
10
4
5
+60°
+90°
+60°
+90°
10
2
4
+120°
+180°
DC
2
2
10
3
5
+120°
+180°
DC
10
5
10
T
J
= 125 °C
T
J
= 25 °C
4
Ø
2
2
Conduction Period
Controlled Rectifier
T
u
rned Fully On
T
J
= 125 °C
10
2
1.0
1.0
1.0
2
5
10
2
5
10
2
2
5
10
3
0
1
2
3
4
5
6
7
Average On-
S
tate Current Over Full Cycle (A)
Instantaneous On-
S
tate Voltage (V)
Fig. 13 – Maximum High-Level On-State Power Loss vs.
Average On-State Current (Rectangular Current Waveform),
2N5205 Series
Fig. 14 – Maximum Instantaneous On-State Voltage vs.
Instantaneous On-State Current,
2N5205 Series
10
-1
2
5
1.0
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
10
1
5
10
5
2
2
S
teady
S
tate Value = 1.5 °C/W
1.0
5
1.0
5
Long Time Duration
s
2
2
10
-1
5
10
-1
5
S
hort Time Duration
s
2
2
10
-2
5
10
-1
10
-2
10
-6
2
5
10
-5
2
5
10
-4
2
5
10
-3
2
5
10
-2
2
t –
S
quare Wave Pulse Duration (s)
Fig. 15 – Maximum Transient Thermal Resistance,
Junction to Case vs. Pulse Duration,
2N5205 Series
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Sep-17
Document Number: 93706
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Disclaimer
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Revision: 01-Jan-2023
Document Number: 91000
1
