Vishay-Intertech-VS-40TPS12AP-S1
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VS-40TPS..AP-S1 Series
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
• Designed
and qualified according to
JEDEC
®
-JESD 47
(A)
• Low I
GT
parts available
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
1 (K)
(
G
) 3
Available
TO-247AC
APPLICATIONS
PRODUCT SUMMARY
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
Package
TO-247AC
Single SCR
35 A
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
DESCRIPTION
800 V, 1200 V
1.45 V
The VS-40TPS… high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up
to
125 °C junction temperature.
I
GT
150 mA
T
J
-40 °C to +125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
35
UNITS
I
T(AV)
Sinusoidal waveform
A
I
RMS
55
V
RRM
/V
DRM
I
TSM
1200
600
V
A
V
T
40 A, T
J
= 25 °C
1.45
V
dV/dt
dI/dt
1000
100
V/μs
A/μs
°C
T
J
-40 to +125
VOLTAGE RATINGS
V
RRM
/V
DRM
, MAXIMUM
V
RSM
, MAXIMUM
I
RRM
/I
DRM
AT 125 °C
mA
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK
PART NUMBER
REVERSE VOLTAGE
V
10
10
VS-40TPS08AP-S1
VS-40TPS12AP-S1
800
900
1200
1300
Revision: 18-Mar-16
Document Number: 94388
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-40TPS…AP-S1 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average on-state current
I
T(AV)
T
C
= 79 °C, 180° conduction half sine wave
35
Maximum continuous RMS
on-state current as AC switch
I
T(RMS)
55
A
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
500
600
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
Initial
T
J
= T
J
max.
1250
A
2
s
Maximum I
2
t for fusing
I
2
t
1760
Maximum I
2
t for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
17 600
1.02
1.23
9.74
7.50
1.85
100
A
2
s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
V
T
J
= 125 °C
m
r
t2
V
TM
dI/dt
I
H
110 A, T
J
= 25 °C
T
J
= 25 °C
V
A/μs
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= 25 °C
200
Maximum latching current
I
L
300
mA
0.5
Maximum reverse and direct leakage current
I
RRM/
I
DRM
V
R
= Rated V
RRM
/V
DRM
T
J
= 125 °C
10
Maximum rate of rise of off-state voltage
40TPS…AP-S1 Series
dV/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
– k = 100
V/μs
500
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
P
G(AV)
I
GM
2.5
2.5
10
A
V
– V
GM
T
J
= – 40 °C
4.0
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
Maximum required DC gate voltage to trigger
V
GT
T
J
= 25 °C
V
T
J
= 125 °C
T
J
= – 40 °C
Anode supply = 6 V
resistive load
T
J
= 25 °C
Maximum required DC gate current to trigger
Maximum DC gate voltage n
o
t
t
o trigger
I
GT
mA
T
J
= 125 °C
T
J
= 25 °C, for 40TPS08AP-S1 and 40TPS12AP-S1
40
V
GD
0.15
1
V
T
J
= 125 °C, V
DRM
= Rated value
T
J
= 125 °C, V
DRM
= Rated value
for 40TPS12AP-S1
ent not to trigger
Maximum DC gate curr
for 40TPS12AP-S1
I
GD
mA
Revision: 18-Mar-16
Document Number: 94388
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-40TPS…AP-S1 Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +125
°C
Maximum thermal resistance,
junction to case
R
thJC
R
thJA
R
thCS
0.6
40
DC operation
Maximum thermal resistance,
junction to ambient
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
40TPS08AP-S1
Case style TO-247AC
40TPS12AP-S1
130
120
110
100
90
130
120
110
40
T
P
S
.
.
S
e
ries
th
J
C
40
T
P
S
.
.
S
e
r
ies
(DC) = 0.6 °C
/
W
R
(DC) = 0.6 °C
/
W
R
thJC
Conduct
i
o
n Angle
Conduct
i
o
n
P
e
riod
100
30°
60°
30°
90°
20
60°
90
80
70
90°
120°
180°
120°
30
180°
80
DC
50
70
0
0
10
20
40
60
10
30
40
Average On-
s
t
ate Current (A)
Fig. 2 – Current Rating Characteristics
Average On-
s
t
ate Cu
r
r
e
nt (A)
Fig. 1 – Current Rating Characteristics
Revision: 18-Mar-16
Document Number: 94388
3
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-40TPS…AP-S1 Series
Vishay Semiconductors
60
50
40
30
20
10
0
550
500
450
400
350
300
250
At Any
R
a
ted
L
o
ad Condition And With
180°
R
a
ted V
App
l
i
e
d
F
o
l
l
o
wing
S
u
r
g
e.
RRM
120°
90°
60°
30°
Ini
t
i
a
l T =
1
25°C
J
@
6
0 Hz 0. 0083 s
@
5
0 Hz 0. 0100 s
R
M
S
L
i
m it
Conduction Angle
40
T
PS
.
.
S
e
ries
T =
1
25°
C
4 0
T
PS. . Se
r
ie s
J
0
5
10 15 20 25 30 35 40
1
10
100
Numbe
r
O
f
E
q
ual Amp
l
i
t
ude
H
a
lf Cycle Cu
r
r
e
nt
P
u
l
s
e
s
(
N)
Aver
a
ge
O
n-
s
t
ate Current (A)
Fig. 3 – On-State Power Loss Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
80
600
Ma
x
imum Non
R
e
pet
i
tive
S
u
rge Current
DC
180°
120°
90°
Ver
s
us Pulse
T
r
a
i
n Duration. Control
70
60
50
40
30
20
10
0
550
500
450
400
350
300
250
Of Conduction May
N
o
t
B
e
M
a
i
nt
a
i
ned.
Initi
a
l T
=
1
25°C
J
No Voltage
R
e
app
l
ied
60°
Ra t e d
V
Re a p p
l
ie d
RRM
30°
R
M
S
L
i
m it
Conduct
i
o
n
P
e
riod
40
T
P
S
.
.
S
e
r
i e s
T =
125°C
40
T
PS
.
.
S
e
ries
J
0
10
20
30
40
50
60
0.01
0.1
P
u
l
s
e T
r
a
in Dura
tion (
s
)
Fig. 6 – Maximum Non-Repetitive Surge Current
1
Aver
a
ge On-
s
t
ate Current (A)
Fig. 4 – On-State Power Loss Characteristics
100
10
T = 25°
C
J
T = 125°C
J
40
T
P
S
. . Se
r
ie s
1.5
1
0.5
1
2
In
s
t
antaneou
s
O
n-
s
t
ate Voltage (V)
Fig. 7 – On-State Voltage Drop Characteristics
Revision: 18-Mar-16
Document Number: 94388
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-40TPS…AP-S1 Series
Vishay Semiconductors
100
Rectangular gate pul
s
e
(1) P
G
M = 100 W, t
p
= 500 μ
s
(2) P
G
M = 50 W, t
p
= 1 m
s
(3) P
G
M = 20 W, t
p
= 2.5 m
s
(4) P
G
M = 10 W, t
p
= 5 m
s
a) Recommended load line for
rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μ
s
, t
p
≥ 6 μ
s
a)
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μ
s
, t
p
≥ 6 μ
s
10
1
b)
(4)
(3)
(2)
(1)
V
G
D
I
G
D
40TP
S
..
S
erie
s
Fre
q
uency limited by P
G
(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
In
s
tantaneou
s G
ate Current (A)
Fig. 8 – Gate Characteristics
1
S
teady
S
tate Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
S
ingle Pul
s
e
40TP
S
..
S
erie
s
0.01
0.0001
0.001
0.01
0.1
1
Sq
uare Wave Pul
s
e Duration (
s
)
Fig. 9 – Thermal Impedance Z
thJC
Characteristics
Revision: 18-Mar-16
Document Number: 94388
5
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
DIMENSIONS
in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K
D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D
B
2 x b2
3 x b
View A – A
C
2 x
e
A1
b4
M
M
0.10 C
A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D
E
E
1. – Anode/open
2. – Cathode
3. – Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C – C, D – D, E – E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
–
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
–
MIN.
0.51
MAX.
1.30
15.87
–
MIN.
MAX.
0.051
0.625
–
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
–
0.144
0.275
0.224
0.216
–
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
