Vishay-Intertech-VS-40TTS12-M3

VS-40TTS12-M3  

Vishay Semiconductors  

Thyristor High Voltage, Phase Control SCR, 40 A  

FEATURES  

2

• Designed

 

and qualified according to  

JEDEC

®

-JESD 47  

(A)  

• 140 °C max. operating junction temperature  

• Material categorization:



 

for definitions of compliance please see  

1 (K)  

(

G

) 3  

3

L TO-220AB  

APPLICATIONS  

• Typical usage is in input rectification crowbar (soft start)  

and AC switch in motor control, UPS, welding, and battery  

charge  

PRIMARY CHARACTERISTICS  

I

T(AV)  

25 A  

1200 V  

1.6 V  

V

DRM

/V

RRM  

DESCRIPTION  

V

TM  

The VS-40TTS12… high voltage series of silicon controlled  

rectifiers are specifically designed for medium power  

switching and phase control applications. The glass  

passivation technology used has reliable operation up

 

to  

140 °C junction temperature.  

I

GT  

35 mA  

T

J  

-40 °C to 140 °C  

3L TO-220AB  

Single SCR  

Package  

Circuit configuration  

MAJOR RATINGS AND CHARACTERISTICS  

PARAMETER  

TEST CONDITIONS  

VALUES  

25  

UNITS  

I

T(AV)  

I

RMS  

V

RRM

/V

DRM  

I

TSM  

Sinusoidal waveform  

A

40  

1200  

350  

V

A

V

T  

T

J

= 25 °C  

1.6  

V

dV/dt  

dI/dt  

T

J  

500  

V/µs  

A/µs  

°C  

150  

-40 to +140  

VOLTAGE RATINGS  

PART NUMBER  

V

RRM

, MAXIMUM PEAK  

REVERSE VOLTAGE  

V

V

DRM

, MAXIMUM  

PEAK DIRECT VOLTAGE  

V

T

J  

°C  

VS-40TTS12-M3  

1200  

1200  

-25 to +140  

Revision: 21-Aug-17  

Document Number: 96289  

1

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-40TTS12-M3  

Vishay Semiconductors  

ABSOLUTE MAXIMUM RATINGS  

PARAMETER  

SYMBOL  

I

T(AV)  

TEST CONDITIONS  

VALUES  

25  

UNITS  

Maximum average on-state current  

Maximum RMS on-state current  

T

C

= 93 °C, 180° conduction half sine wave  

I

RMS  

40  

A

10 ms sine pulse, rated V

RRM

applied  

10 ms sine pulse, no voltage reapplied  

10 ms sine pulse, rated V

RRM

applied  

10 ms sine pulse, no voltage reapplied  

t = 0.1 to 10 ms, no voltage reapplied  

80 A, T

J

= 25 °C  

300  

350  

450  

630  

6300  

1.6  

Maximum peak, one-cycle



 

non-repetitive surge current  

I

TSM  

Maximum I

2

t for fusing  

I

2

t  

A

2

s  

Maximum I

2



t for fusing  

Maximum on-state voltage  

I

2



t  

V

TM  

r

t  

A

2



s  

V

Low level value of on-state slope resistance  

Low level value of threshold voltage  

11.4  

0.96  

0.5  

m

  

V

T

J

= 140 °C  

V

T(TO)  

T

J

= 25 °C  

Maximum reverse and direct leakage  

current  

I

RRM

/I

DRM  

V

R

= Rated V

RRM

/V

DRM  

T

J

= 140 °C  

12  

mA  

Anode supply = 6 V, resistive load, initial I

T

= 1 A,

  

T

J

= 25 °C  

Holding current  

I

H  

100  

Maximum latching current  

I

L  

Anode supply = 6 V, resistive load, T

J

= 25 °C  

200  

500  

150  

Maximum rate of rise of off-state voltage  

Maximum rate of rise of turned-on current  

dV/dt  

dI/dt  

T

J

= T

J

max., linear to 80 °C, V

DRM

= R

g

– k = Open  

V/μs  

A/μs  

TRIGGERING  

PARAMETER  

SYMBOL  

P

GM  

TEST CONDITIONS  

VALUES  

8.0  

UNITS  

Maximum peak gate power  

Maximum average gate power  

Maximum peak positive gate current  

Maximum peak negative gate voltage  

W

P

G(AV)  

+ I

GM  

2.0  

1.5  

A

V

– V

GM  

10  

Maximum required DC gate current to  

trigger  

I

GT  

Anode supply = 6 V, resistive load, T

J

= 25 °C  

Anode supply = 6 V, resistive load, T

J

= 25 °C  

35  

mA  

Maximum required DC gate

  

voltage to trigger  

V

GT  

1.3  

V

Maximum DC gate voltage not to trigger  

Maximum DC gate current not to trigger  

V

GD  

I

GD  

0.2  

1.5  

T

J

= 140 °C, V

DRM

= Rated value  

mA  

SWITCHING  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Typical turn-on time  

Typical reverse recovery time  

Typical turn-off time  

t

gt  

t

rr  

t

q  

T

J

= 25 °C  

0.9  

4

μs  

T

J

= 140 °C  

110  

THERMAL AND MECHANICAL SPECIFICATIONS  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

VALUES  

UNITS  

Maximum junction and storage

  

temperature range  

T

J

, T

Stg  

-40 to 140  

°C  

Maximum thermal resistance,

  

R

thJC  

R

thJA  

R

thCS  

DC operation  

0.8  

60  

junction to case  

Maximum thermal resistance,

  

junction to ambient  

°C/W  

Typical thermal resistance,

  

case to heatsink  

Mounting surface, smooth and greased  

0.5  

2

g

Approximate weight  

0.07  

oz.  

minimum  

maximum  

6 (5)  

kgf · cm  

(lbf · in)  

Mounting torque  

Marking device  

12 (10)  

Case style 3L TO-220AB  

40TTS12  

Revision: 21-Aug-17  

Document Number: 96289  

2

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-40TTS12-M3  

Vishay Semiconductors  

70  

60  

50  

40  

30  

20  

10  

140  

130  

120  

110  

100  

90  

DC  

180 ˚  

120 ˚  

90 ˚  

60 ˚  

30 ˚  

R

thJC

(DC) = 0.8 ˚C/W  

Conduction Angle  

30˚  

RM

S

Limit  

60˚  

90˚  

120˚  

Conduction Period  

T

J

= 125 °C  

180˚  

80  

70  

0

0

0

0

5

10  

15  

20  

25  

30  

0

10  

20  

30  

40  

Avera

g

e On-

S

tate Current (A)  

Avera

g

e On-

S

tate Current (A)  

Fig. 1 – Current Rating Characteristics  

Fig. 4 – On-State Power Loss Characteristics  

280  

260  

240  

220  

200  

180  

160  

140  

120  

140  

130  

120  

110  

100  

90  

At any rated load condition and with  

R

thJC

(DC) = 0.

8

˚C/W  

rated V

rrm

applied following

s

urge.  

Initial T

J

= 125

˚

C  

at 60 Hz 0.0083

s  

at 50 Hz 0.0100

s  

Conduction Period  

30˚  

60˚  

90˚  

80  

120˚  

180˚  

DC  

70  

1

10  

100  

5

10 15 20

 

25 30 35 40 45  

Number of Equal Amplitude  

Half Cycle Current Pulses (N)  

Avera

g

e On-

S

tate Current (A)  

Fig. 2 – Current Rating Characteristics  

Fig. 5 – Maximum Non-Repetitive Surge Current  

400  

350  

300  

250  

200  

150  

100  

60  

50  

40  

30  

20  

10  

Maximum non repetitive

s

urge current  

v

s

. pul

s

e train duration. Control of  

conduction may not be maintained.  

180 ˚  

120 ˚  

90 ˚  

Initial T

J

= 12

5

˚C  

No voltage reapplied  

Rated V

rrm

reapplied  

60 ˚  

30 ˚  

RM

S

Limit  

Conduction Angle  

T

J

= 125 °C  

0

0.01  

0.1  

1

10  

5

10  

15  

20  

25  

30  

Pulse Train Duration (s)  

Fig. 6 – Maximum Non-Repetitive Surge Current  

Avera

g

e On-

S

tate Current (A)  

Fig. 3 – On-State Power Loss Characteristics  

Revision: 21-Aug-17  

Document Number: 96289  

3

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-40TTS12-M3  

Vishay Semiconductors  

1000  

100  

10  

T

J

= 25 ˚ C  

T

J

= 125

 

˚ C  

1

0

1

2

3

4

5

Instantaneous On-

S

tate Volta

g

e (V)  

Fig. 7 – On-State Voltage Drop Characteristics  

100  

Rectangular gate pul

s

e  

(1) P

G

M = 40 W, tp = 1 m

s  

(2) P

G

M = 20 W, tp = 2 m

s  

(3) P

G

M = 8 W, tp = 5 m

s  

(4) P

G

M = 4 W, tp = 10 m

s  

a)Recommended load line for  

rated di/dt: 10 V, 20

Ω

 

tr = 0.5 μ

s

, tp >= 6 μ

s  

b)Recommended load line for  

<= 30% rated di/dt: 10 V, 65

Ω  

10  

tr = 1 μ

s

, tp >= 6 μ

s  

(a)  

(b)  

V

G

D  

1

(4)  

(3)  

(1)  

(2)  

Fre

q

uency Limited by P

G

(AV)  

I

G

D  

0.1  

0.001  

0.01  

0.1  

1

10  

100  

Instantaneous

G

ate Current (A)  

Fig. 8 – Gate Characteristics  

1

S

teady

s

tate value  

(DC operation)  

0.1  

S

ingle pul

s

e  

0.01  

0.0001  

0.001  

0.01  

0.1  

1

10  

S

quare Wave Pulse Duration (s)  

Fig. 9 – Thermal Impedance Z

thJC

Characteristics  

Revision: 21-Aug-17  

Document Number: 96289  

4

For technical questions within your region:

,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

VS-40TTS12-M3  

Vishay Semiconductors  

ORDERING INFORMATION TABLE  

Device code  

V

S

–

40  

T

T

S

12 -M3  

1

2

3

4

5

6

7

1

2

3

–

–

–

Vishay Semiconductors product  

Current rating, RMS value  

Circuit configuration:  

T = single thyristor  

Package:  

–

–

4

5

T = TO-220  

Type of silicon:  

S = standard recovery rectifier  

Voltage rating (12 = 1200 V)  

6

7

–

–

Environmental digit:  

-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free  

ORDERING INFORMATION

(Example)  

PREFERRED P/N  

QUANTITY PER T/R  

MINIMUM ORDER QUANTITY  

PACKAGING DESCRIPTION  

VS-40TTS12-M3  

50  

1000  

Antistatic plastic tubes  

LINKS TO RELATED DOCUMENTS  

Dimensions  

Part marking information  

Revision: 21-Aug-17  

Document Number: 96289  

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,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

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A

T

Outline Dimensions  

Vishay Semiconductors  

3L TO-220AB  

DIMENSIONS

in millimeters and inches  

A

M

M

0.014

B A  

(6)  

E

Thermal pad  

(E)  

A

A1  

1

3

2

D

B

A

Q

D

C

(6)  

(2)  

(H1)  

L1  

H1  

C

(6)  

D2  

(6) D  

c

3 x b  

3 x b2  

D1  

Detail B  

Detail B  

E1 (6)  

A2  

L

C

(b, b2)  

b1, b3  

Ba

s

e metal  

Plating  

A

c1  

(4)  

c

2 x

 

e  

e1  

View A – A  

(4)  

S

ection C – C and D – D  

M

M

0.015 B

 

A  

Lead tip  

Conforms to JEDEC

®

outline TO-220AB  

MILLIMETERS  

INCHES  

MIN.  

MILLIMETERS  

INCHES  

SYMBOL  

NOTES  

SYMBOL  

NOTES  

MIN.  

4.25  

1.14  

2.50  

0.69  

0.38  

1.20  

1.14  

0.36  

0.36  

14.85  

8.38  

MAX.  

4.65  

1.40  

2.92  

1.01  

0.97  

1.73  

1.73  

0.61  

0.56  

15.35  

9.02  

MAX.  

0.183  

0.055  

0.115  

0.040  

0.038  

0.068  

0.068  

0.024  

0.022  

0.604  

0.355  

MIN.  

11.68  

10.11  

6.86  

2.41  

4.88  

6.09  

13.52  

3.32  

3.54  

2.60  

MAX.  

13.30  

10.51  

8.89  

MIN.  

0.460  

0.398  

0.270  

0.095  

0.192  

0.240  

0.532  

0.131  

0.139  

0.102  

MAX.  

0.524  

0.414  

0.350  

0.105  

0.208  

0.255  

0.552  

0.150  

0.154  

0.118  

A

A1  

A2  

b

0.167  

0.045  

0.098  

0.027  

0.015  

0.047  

0.045  

0.014  

0.014  

0.585  

0.330  

D2  

E

6, 7  

3, 6  

6

E1  

e

2.67  

b1  

b2  

b3  

c

4

4

e1  

H1  

L

5.28  

6.48  

6

2

14.02  

3.82  

L1  

Ø P  

Q

c1  

D

4

3

3.91  

3.00  

D1  

Notes  

(1)  

(2)  

(3)  

Dimensioning and tolerancing as per ASME Y14.5M-1994  

Lead dimension and finish uncontrolled in L1  

Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured  

at the outermost extremes of the plastic body  

(4)  

(5)  

(6)  

(7)  

Dimension b1, b3, and c1 apply to base metal only  

Controlling dimensions: inches  

Thermal pad contour optional within dimensions E, H1, D2, and E1  

Outline conforms to JEDEC

®

TO-220, except D2  

Revision: 13-Jun-2019  

Document Number: 96154  

1

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,

,

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH

A

T

Legal Disclaimer Notice  

Vishay  

Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product.

 

To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  

typical requirements that are often placed on Vishay products in generic applications.

 

Such statements are not binding  

statements about the suitability of products for a particular application.

 

It is the customer’s responsibility to validate that a  

particular product with the properties described in the product specification is suitable for use in a particular application.  

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  

time. All

 

operating parameters, including typical parameters, must be validated for each customer application by the customer’s  

technical experts.

 

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  

including but not limited to the warranty expressed therein.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  

such applications.  

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  

or by any conduct of Vishay.

 

Product names and markings noted herein may be trademarks of their respective owners.  

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 01-Jan-2019  

Document Number: 91000  

1