Vishay-Intertech-VS-50RIA100M
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VS-50RIA Series
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
TO-65 (TO-208AC)
• Material
categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
I
T(AV)
50 A
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
V
DRM
/V
RRM
V
TM
I
GT
T
J
1.60 V
100 mA
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
-40 °C to 125 °C
TO-65 (TO-208AC)
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
50
UNITS
A
°C
A
I
T(AV)
T
C
94
I
T(RMS)
80
50 Hz
60 Hz
50 Hz
60 Hz
1430
I
TSM
A
1490
10.18
9.30
I
2
t
kA
2
s
V
DRM
/V
RRM
100 to 1200
110
V
t
q
Typical
μs
°C
T
J
-40 to +125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMU
M
A
T
T
J
= T
J
MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
PEAK AND OFF-STATE VOLTAGE
(1)
V
NON-REPETITIVE PEAK VOLTAGE
(2)
V
10
20
100
200
150
300
40
400
500
VS-50RIA
60
600
700
15
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
For voltage pulses with t
p
5 ms
(2)
Revision: 21-Sep-17
Document Number: 93711
1
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,
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VS-50RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES UNITS
50
94
A
°C
A
Maximum average on-state current
at case temperature
I
T(AV)
Maximum RMS on-state current
I
T(RMS)
80
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1430
1490
1200
1255
10.18
9.30
7.20
6.56
No voltage
reapplied
Maximum peak, one-cycle
I
TSM
A
non-repetitive surge current
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
No voltage
reapplied
Maximum I
2
t for fusing
I
2
t
kA
2
s
100 % V
RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
Maximum I
2
t for fusing
I
2
t
101.8
kA
2
s
Low level value of threshold voltage
High level value of threshold voltage
V
T(TO)1
V
T(TO)2
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(
x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
0.94
1.08
V
Low level value of on-state
slope resistance
r
t1
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
4.08
m
High level value of on-state
r
t2
V
TM
I
H
(
x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
3.34
1.60
200
400
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
pk
= 157 A, T
J
= 25 °C
V
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
mA
I
L
Anode supply 6 V, resistive load
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
V
DRM
600 V
V
DRM
1600 V
200
A/μs
100
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Maximum rate of
rise of turned-on current
dI/dt
Gate pulse = 20 V, 15
, t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15
source, t
p
= 20 μs
Typical delay time
t
d
t
q
0.9
μs
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = – 10 A/μs, V
R
= 50 V
Typical turn-off time
110
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES UNITS
200
V/μs
Maximum critical rate of rise of
off-state voltage
dV/dt
500
(1)
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 21-Sep-17
Document Number: 93711
2
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-50RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
P
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
VALUES
10
UNITS
Maximum peak gate power
W
A
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
P
G(AV)
I
GM
2.5
2.5
+V
GM
-V
GM
20
V
10
T
J
= – 40 °C
T
J
= 25 °C
250
100
50
DC gate current required to trigger
DC gate voltage required to trigger
I
GT
mA
V
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
T
J
= 125 °C
T
J
= – 40 °C
3.5
V
GT
T
J
= 25 °C
2.5
T
J
= T
J
maximum,
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
I
GD
5.0
0.2
mA
V
V
DRM
= Rated voltage
V
GD
T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction and
storage temperature range
T
J
, T
Stg
-40 to +125
°C
Maximum thermal resistance,
R
thJC
R
thCS
DC operation
0.35
junction to case
K/W
Maximum thermal resistance,
case to heat sink
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.25
3.4
+ 0 – 10 %
(30)
2.3
+ 0 – 10 %
(20)
N · m
(lbf · in)
Allowable mounting torque
Lubricated threads
28
g
Approximate weight
Case style
1.0
oz.
See dimensions – link at the end of datasheet
TO-65 (TO-208AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.078
0.094
0.120
0.176
0.294
0.057
0.098
0.130
0.183
0.296
T
J
= T
J
maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93711
3
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,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-50RIA Series
Vishay Semiconductors
130
120
110
100
90
100
90
80
70
60
50
40
30
20
10
0
50RIA Series
thJC
DC
R
(DC) = 0.35 K/W
180°
120°
90°
60°
30°
Conduction Angle
RMS Limit
30°
60°
Conduction Period
50RIA Series
90°
30
120°
180°
T =
125°C
J
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
10
20
40
50
60
Average On-state Current (A)
Fig. 1 – Current Ratings Characteristics
Fig. 4 – On-State Power Loss Characteristics
130
1300
At Any Rated Load Condition And With
50RIA Series
thJC
Rated V
Applied Following Surge.
RRM
R
(DC) = 0.35 K/W
Initial T
= 125°C
1200
1100
1000
900
J
120
110
100
90
@
6
0 Hz 0.0083 s
@
5
0 Hz 0.0100 s
Conduction Period
800
90°
60°
700
120°
50RIA Series
30°
180°
DC
80
600
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 – Current Ratings Characteristics
Fig. 5 – Maximum Non-Repetitive Surge Current
80
1500
Maximum Non Repetitive Surge Current
180°
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1400
1300
1200
1100
1000
900
120°
90°
60°
30°
70
60
50
40
30
20
10
0
Initial T
= 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
RMS Limit
Conduction Angle
50RIA Series
800
700
T =
125°C
J
50RIA Series
600
500
0.01
0
10
20
30
40
50
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 – On-State Power Loss Characteristics
Fig. 6 – Maximum Non-Repetitive Surge Current
Revision: 21-Sep-17
Document Number: 93711
4
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-50RIA Series
Vishay Semiconductors
1000
100
10
T =
25°C
J
T =
125°C
J
50RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 – Forward Voltage Drop Characteristics
1
Steady State Value
= 0.35 K/W
R
thJ-hs
0.1
50RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 8 – Thermal Impedance Z
thJC
Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 10W,
tp = 5ms
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30
%
r
ated di/dt : 20V, 65 ohms
tr<=1 µs
(2) PGM = 20W,
tp = 2.5ms
(3) PGM = 50W,
tp = 1ms
(4) PGM = 100W,
tp = 500µs
(b)
(a)
(1) (2)
(3) (4)
VGD
IGD
0.01
50RIA Series
Frequency Limited by PG(AV)
10 100
1000
0.1
0.001
0.1
1
Instantaneous Gate Current (A)
Fig. 9 – Gate Characteristics
Revision: 21-Sep-17
Document Number: 93711
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VS-50RIA Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device co
d
e
V
S
–
50 RIA
120
S
90
M
1
2
3
4
5
6
1
–
–
–
–
–
Vi
s
hay
S
emiconductor
s
product
Current code
2
E
ss
ential part number
3
4
Voltage code x 10 = V
RRM
(
s
ee Voltage Rating
s
table)
Critical dV/dt:
5
None = 500 V/μ
s
(
s
tandard value)
S
90 = 1000 V/μ
s
(
s
pecial
s
election)
–
None =
s
tud ba
s
e TO-65 (TO-208AC) 1/4″ 28UNF-2A
M =
s
tud ba
s
e TO-65 (TO-208AC) M6 x 1
6
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 21-Sep-17
Document Number: 93711
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Outline Dimensions
Vishay Semiconductors
TO-208AC (TO-65)
DIMENSIONS
in millimeters (inches)
5.1/7.6
(0.2/0.3)
C
Ø 4.1 (Ø 0.16)
3 min.
(0.118 min.)
G
Ø 1.5 (Ø 0.06)
2.5/3.6
(0.1/0.14)
31 max.
(1.22 max.)
22.4 max.
(0.88 max.)
Ø 15 (Ø 0.59)
14.5 max.
(0.57 max.)
10.7/11.5
(0.42/0.46)
A
Note:
A = Anode
C = Cathode
G
=
G
ate
1/4″-28UNF-2A
for metric device M6 x 1
Ø 19.2 (Ø 0.75)
17.2/17.35
(0.67/0.68)
Across flats
0.55 0.03
0.94 0.04
1.7/1.8
(0.06/0.07)
2.7 (0.106)
Revision: 02-Jun-17
Document Number: 95334
1
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,
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,
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
Document Number: 91000
1
